FDB8441_F085 [FAIRCHILD]
Power Field-Effect Transistor, 28A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3;
| 型号： | FDB8441_F085 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 28A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3 开关 晶体管 |
| 文件： | 总7页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2011
FDB8441
®
N-Channel PowerTrench MOSFET
40V, 120A, 2.5mΩ
Features
Applications
Powertrain Management
Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A
Solenoid and Motor Drivers
Typ Qg(10) = 215nC at VGS = 10V
Low Miller Charge
Electronic Steering
Low Qrr Body Diode
Integrated Starter / Alternator
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
Distributed Power Architectures and VRMs
Primary Switch for 12V Systems
©2011 Fairchild Semiconductor Corporation
FDB8441 Rev.A2
1
www.fairchildsemi.com
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
±20
V
V
Drain Current Continuous (TC = 25oC, Silicon limited)
Drain Current Continuous (TC = 100oC, Silicon limited)
Drain Current Continuous (TC = 25oC, Package limited)
Drain Current Continuous (TA = 25oC, RθJA = 43oC/W)
Pulsed
262*
185*
ID
120
A
28
See Figure 4
947
EAS
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/oC
oC
Power dissipation
Derate above 25oC
300
PD
2
TJ, TSTG
Operating and Storage Temperature
-55 to 175
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case
0.5
62
43
oC/W
oC/W
oC/W
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient, 1in2 copper pad area
(Note 2)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
800 units
FDB8441
FDB8441
TO-263AB
330mm
24mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
-
-
V
1
V
DS = 32V
μA
nA
VGS = 0V
TJ = 150°C
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VDS = VGS, ID = 250μA
D = 80A, VGS = 10V
2
-
2.8
1.9
4
V
I
2.5
mΩ
ID = 80A, VGS = 10V,
TJ = 175°C
-
3.3
4.3
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
15000
1250
685
1.1
-
pF
pF
pF
Ω
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Crss
Output Capacitance
-
Reverse Transfer Capacitance
Gate Resistance
-
RG
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
-
280
38
-
Qg(TOT)
Qg(TH)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
215
29
nC
nC
nC
nC
nC
VGS = 0 to 2V
V
I
DD = 20V
D = 35A
Ig = 1mA
60
Qgs2
Qgd
32
-
49
-
FDB8441 Rev.A2
2
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
23
24
75
17.9
-
77
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
-
-
V
V
DD = 20V, ID = 35A
GS = 10V, RGS = 1.5Ω
td(off)
tf
-
-
toff
147
Drain-Source Diode Characteristics
I
SD = 35A
-
-
-
-
0.8
0.8
52
1.25
1.0
68
V
V
VSD
Source to Drain Diode Voltage
ISD = 15A
trr
Reverse Recovery Time
IF = 35A, di/dt = 100A/μs
IF = 35A, di/dt = 100A/μs
ns
nC
Qrr
Reverse Recovery Charge
76
99
Notes:
o
1: Starting T = 25 C, L = 0.46mH, I = 64A.
J
AS
2: Pulse width = 100s.
FDB8441 Rev.A2
3
www.fairchildsemi.com
Typical Characteristics
300
250
200
150
100
50
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
CURRENT LIMITED
BY PACKAGE
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
P
DM
0.1
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
1000
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
100
50
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDB8441 Rev.A2
4
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Typical Characteristics
4000
1000
500
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
10us
If R
≠ 0
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
100us
100
STARTING TJ = 25oC
10
LIMITED
BY PACKAGE
10
1
STARTING TJ = 150oC
1ms
10ms
DC
1
OPERATION IN THIS SINGLE PULSE
AREA MAY BE
LIMITED BY r
T
= MAX RATED
J
o
DS(on)
T
C
= 25 C
0.1
0.01
0.1
1
10
100
1000 5000
1
10
100
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
160
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10V
VGS = 5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
DD = 5V
120
80
40
0
120
80
40
0
VGS = 4.5V
TJ = 175oC
TJ = 25oC
VGS = 4V
TJ = -55oC
VGS = 3.5V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
50
1.8
PULSE DURATION = 80μs
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
TJ = 25oC
TJ = 175oC
ID = 80A
GS = 10V
V
3
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8441 Rev.A2
5
www.fairchildsemi.com
Typical Characteristics
1.15
1.10
1.05
1.00
0.95
0.90
1.2
ID = 250μA
VGS = VDS
ID = 250μA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
40000
ID = 80A
Ciss
VDD = 15V
8
10000
VDD = 25V
6
Coss
VDD = 20V
4
2
0
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
0
50
100
150
200
250
1
10
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
FDB8441 Rev.A2
6
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Datasheet contains the design specifications for product development. Specifications
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Not In Production
Rev. I58
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FDB8441 Rev.A2
7
相关型号：
FDB8442_F085
Power Field-Effect Transistor, 28A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3
FAIRCHILD
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