FDB8445-F085 [ONSEMI]
N 沟道，PowerTrench® MOSFET，40V，70A，9mΩ;
| 型号： | FDB8445-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，40V，70A，9mΩ |
| 文件： | 总8页 (文件大小：487K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDB8445-F085
®
N-Channel PowerTrench MOSFET
40V, 70A, 9mΩ
Applications
Automotive Engine Control
Features
Typ rDS(on) = 6.8mΩ at VGS = 10V, ID = 70A
Powertrain Management
Typ Qg(10) = 44nC at VGS = 10V
Low Miller Charge
Solenoid and Motor Drivers
Electronic Transmission
Low Qrr Body Diode
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
UIS Capability (Single Pulse/ Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
D
GATE
G
DRAIN
SOURCE
(FLANGE)
TO-263AB
S
FDB SERIES
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev 3
Publication Order Number:
FDB8445-F085/D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
A
±20
Drain Current Continuous (VGS = 10V)
Pulsed
(Note 1)
(Note 2)
70
ID
Figure 4
1 0 2
EAS
PD
S i n g l e P u l s e A v a l a n c h e E n e r g y
m J
W
W/oC
oC
Power Dissipation
Derate above 25oC
92
0.6
TJ, TSTG
Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
Maximum Thermal Resistance, Junction to Case
1.63
43
oC/W
oC/W
Maximum Thermal Resistance, Junction to Ambient TO-263, lin2 cop-
per pad area
RθJA
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
800 units
FDB8445
FDB8445-F085
TO-263AB
330mm
24mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
-
-
V
1
μA
μA
nA
VDS = 32V
IDSS
VGS = 0V
TJ =150°C
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250μA
D = 70A, VGS = 10V
2
-
2.5
6.8
4
9
V
I
rDS(on)
Drain to Source On Resistance
mΩ
ID = 70A, VGS = 10V,
TJ = 175°C
-
13
17.2
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
2860
295
180
1.95
44
3805
pF
pF
pF
Ω
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Crss
Output Capacitance
395
Reverse Transfer Capacitance
Gate Resistance
270
RG
f = 1MHz
-
62
4.1
-
Qg(TOT)
Qg(TH)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VGS = 0 to 10V
nC
nC
nC
nC
nC
VGS = 0 to 2V
2.9
11
VDD=20V,
I
D = 70A,
Qgs2
Qgd
8.2
11
-
-
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2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
45
-
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
10
19
36
16
-
-
VDD = 20V, ID = 70A
VGS = 10V, RGS = 5Ω
td(off)
tf
-
-
toff
81
Drain-Source Diode Characteristics
I
SD = 70A
-
-
-
-
-
-
-
-
1.25
1.0
59
V
V
VSD
Source to Drain Diode Voltage
ISD = 35A
trr
Reverse Recovery Time
IF = 70A, di/dt = 100A/μs
IF = 70A, di/dt = 100A/μs
ns
nC
Qrr
Reverse Recovery Charge
77
Notes:
1: Maximum wire current carrying capacity is 70A.
o
2: Starting T = 25 C, L = 65uH, I = 56A.
J
AS
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
www.onsemi.com
3
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
80
60
40
20
0
CURRENT LIMITED
BY WIRE
VGS = 10V
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
TRANSCONDUCTANCE
TC = 25oC
MAY LIMIT CURRENT
FOR TEMPERATURES
IN THIS REGION
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
100
VGS = 10V
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
Typical Characteristics
500
100
1000
100
10
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
10us
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
STARTING TJ = 25oC
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
1
STARTING TJ = 150oC
1
1ms
OPERATION IN THIS
AREA MAY BE
10ms
DC
LIMITED BY r
DS(on)
0.1
0.01
0.1
1
10
100
400
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
140
140
VGS = 10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120
100
80
60
40
20
0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120
VDD = 5V
100
80
60
40
20
0
VGS = 5V
VGS = 4.5V
TJ = 175oC
TJ = 25oC
VGS = 4V
TJ = -55oC
VGS = 3.5V
0
1
2
3
4
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
20
2.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 70A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
1.2
1.0
0.8
0.6
16
12
8
TJ = 175oC
ID = 70A
VGS = 10V
TJ = 25oC
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.15
1.10
1.05
1.00
0.95
0.90
VGS = VDS
ID = 250μA
ID = 250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
ID = 70A
9
VDD = 15V
Ciss
8
7
VDD = 20V
6
VDD = 25V
1000
5
4
3
2
1
0
Coss
f = 1MHz
VGS = 0V
Crss
10
100
0.1
50
1
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
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6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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