FDB86102LZ [ONSEMI]
N 沟道 PowerTrench® MOSFET，100V，30A，24mΩ;
| 型号： | FDB86102LZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET，100V，30A，24mΩ PC 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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May 2011
FDB86102LZ
N-Channel PowerTrench® MOSFET
100 V, 30 A, 24 mΩ
Features
General Description
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A
HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench
technologies
Applications
DC-DC conversion
Inverter
Fast switching speed
100% UIL Tested
RoHS Compliant
Synchronous Rectifier
D
D
G
G
S
TO-263AB
FDB Series
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
100
V
V
±20
Drain Current
-Continuous(Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
30
TC = 25 °C
40
ID
A
TA = 25 °C (Note 1a)
8.3
-Pulsed
50
EAS
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
121
mJ
W
TA = 25 °C
TA = 25 °C
(Note 1a)
(Note 1b)
3.1
2
PD
Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
1.9
40
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
330mm
Tape Width
24 mm
Quantity
FDB86102LZ
FDB86102LZ
TO-263AB
800 units
©2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
69
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
μA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0
1.5
-6
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
mV/°C
V
GS = 10 V, ID = 8.3 A
18
23
31
29
24
35
42
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 6.8 A
mΩ
VGS = 10 V, ID = 8.3 A,TJ = 125 °C
VDS = 5 V, ID = 8.3 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
959
181
9
1275
240
13
pF
pF
pF
Ω
VDS = 50 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.4
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6.6
2.1
13
10
33
10
21
11
ns
ns
VDD = 50 V, ID = 8.3 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
18.2
2.3
ns
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
15.2
7.6
nC
nC
nC
nC
VDD = 50 V,
D = 8.3 A
I
2.4
Qgd
2.5
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 8.3 A
(Note 2)
(Note 2)
0.8
0.7
42
1.3
1.2
67
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 2.4 A
trr
Reverse Recovery Time
ns
IF = 8.3 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
40
64
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
b) 62.5 °C/W when mounted on
a minimum pad of 2 oz copper
a)
40 °C/W when mounted on a
1 in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting T = 25 °C, L = 3 mH, I = 9 A, V = 100 V, V = 10 V.
J
AS
DD
GS
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1
www.fairchildsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
40
5
4
3
2
1
0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 3.5 V
VGS = 4.5 V
30
VGS = 3 V
VGS = 3 V
VGS = 3.5 V
20
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
40 50
VGS = 4.5 V
30
0
0
0.5
1.0
1.5
2.0
0
10
20
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
100
2.2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 8.3 A
GS = 10 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
80
60
40
20
0
ID = 8.3 A
TJ = 125 o
C
TJ = 25 o
C
2
3
4
5
6
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
50
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
TJ = 150 o
40
30
20
10
0
10
1
VDS = 5 V
C
TJ = 25 oC
TJ = 150 o
C
0.1
TJ = 25 o
C
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
1
1.5
2.0
2.5
3.0
3.5
4.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1
www.fairchildsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
10000
1000
ID = 8.3 A
8
Ciss
VDD = 25 V
6
100
10
1
Coss
VDD = 50 V
4
VDD = 75 V
2
0
Crss
f = 1 MHz
= 0 V
V
GS
0
5
10
Q , GATE CHARGE (nC)
15
20
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
10-1
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
40
VGS = 0 V
TJ = 25 oC
TJ = 125 oC
10
TJ = 100 oC
TJ = 25 o
C
TJ = 125 o
C
1
0.001
0.01
0.1
1
10
100
0
3
6
9
12 15 18 21 24 27 30 33
tAV, TIME IN AVALANCHE (ms)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure10. Gate LeakageCuurent vs Gate to
Source Voltage
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
40
30
20
10
0
100
VGS = 10 V
10
1
10 ms
100 ms
THIS AREA IS
LIMITED BY r
1 s
10 s
DC
DS(on)
VGS = 4.5 V
SINGLE PULSE
TJ = MAX RATED
0.1
0.01
R
θJC = 1.9 oC/W
C = 25 oC
R
θJC = 1.9 oC/W
T
25
50
75
100
125
150
0.1
1
10
100
TC, CASE TEMPERATURE (oC)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Maximum Continuous Drain
Current vs Case Temperature
Figure12. F o r w a r d B i a s S a f e O p e r a t i n g A r e a
©2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1
www.fairchildsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
300
100
SINGLE PULSE
RθJC = 1.9oC/W
TC = 25oC
10
10-3
10-2
10-1
1
10
100
1000
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
t
1
t
2
SINGLE PULSE
RθJC = 1.9 oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z x R + T
θJC θJC C
J
DM
0.1
10-2
10-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Case Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1
www.fairchildsemi.com
5
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Datasheet contains the design specifications for product development. Specifications
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Rev. I54
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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