FDBL0065N40 [ONSEMI]
N 沟道 PowerTrench® MOSFET，40V，300A，0.65mΩ;
| 型号： | FDBL0065N40 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET，40V，300A，0.65mΩ |
| 文件： | 总8页 (文件大小：495K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2014 年 11 月
FDBL0065N40
®
N 沟道 PowerTrench MOSFET
40 V, 300 A, 0.65 mΩ
特性
典型值 R
典型值 Q
UIS 能力
= 0.5 mΩ（在 V = 10 V，I = 80 A）
GS D
DS(on)
= 220 nC （在 V = 10 V， I = 80 A）
g(tot)
GS
D
D
符合 RoHS 标准
应用
工业电机驱动器
工业电源
G
工业自动化
电动工具
S
电池保护
如需最新封装图纸，请访问 Fairchild 网站：
https://www.fairchildsemi.com/evaluate/package-
specifications/packageDetails.html?id=PN_PSOFA-008
太阳能逆变器
UPS 和能源逆变器
储能
负载开关
MOSFET 最大额定值， TJ = 25 °C 除非另有说明。
符号
VDSS
VGS
参数
额定值
单位
40
V
漏极至源极电压的关系
栅极至源极电压
±20
300
V
漏极电流 - 连续（VGS=10）（注 1）
脉冲漏电流
TC = 25 °C
TC = 25 °C
ID
A
见图 4
1064
429
EAS
PD
mJ
W
单脉冲雪崩能量
功耗
（注 2）
（注 3）
2.86
W/°C
°C
超过 25 °C 时降额
工作和存储温度
结点 - 壳体的热阻
结至环境热阻最大值
TJ, TSTG
RqJC
-55 至 + 175
0.35
43
°C/W
°C/W
RqJA
注意：
1: 电流受接合线配置限制。
2: 电感充电期间，起始 T = 25 °C， L = 0.3 mH， I = 84 A， V = 40 V，雪崩时间 V = 0 V。
J
AS
DD
DD
3: R
等于结至壳体和壳体至环境热阻之和，其中，壳体热参考定义为漏极引脚的焊料安装表面。 R
具备设计保证，其中 R
由电路板
θJA
θJC
θJA
2
设计确定。此处的最大额定值基于安装在 2oz 铜的 1 in 焊盘上。
封装标识与定购信息
器件标识
器件
封装
FDBL0065N40
FDBL0065N40
MO-299A
-
-
-
1
www.fairchildsemi.com
©2014 飞兆半导体公司
FDBL0065N40 版本 C3
电气特性， TJ = 25 °C 除非另有说明。
符号
关断特性
BVDSS
IDSS
参数
测试条件
最小值 典型值 最大值
单位
ID = 250 μA, VGS = 0 V
40
-
-
-
-
-
-
1
V
漏极至源极击穿电压
T = 25 °C
μA
mA
nA
V
DS = 40 V，
J
漏极至源极漏电流
栅极至源极漏电流
VGS = 0 V
TJ = 175 °C (Note 4)
-
1
IGSS
VGS = ±20 V
-
±100
导通特性
VGS(th)
2.0
3.0
4.0
V
栅极至源极阀值电压
漏极至源极导通电阻
VGS = VDS， ID = 250 μA
TJ = 25 °C
-
-
0.50
0.86
0.65
1.10
mΩ
mΩ
I
D = 80 A，
RDS(on)
VGS= 10 V
TJ = 175 °C （注 4）
动态特性
Ciss
-
-
-
-
-
15900
4025
604
2.6
-
pF
pF
pF
Ω
nC
nC
nC
nC
输入电容
VDS = 25 V， VGS = 0 V，
f = 1 MHz
Coss
Crss
Rg
-
输出电容
-
-
反向传输电容
f = 1 MHz
栅极阻抗
Qg(ToT)
Qg(th)
Qgs
220
29
296
39
-
在 10 V 的栅极总电荷
阀值栅极电荷
VGS = 0 至 10 V
VGS = 0 至 2 V
V
DD = 20 V
-
I
D = 80 A
-
73
栅极 - 源极栅极电荷
栅极 - 漏极 “ 米勒 ” 电荷
Qgd
-
41
-
开关特性
ton
td(on)
tr
-
-
-
-
-
-
-
54
82
106
52
-
221
ns
ns
ns
ns
ns
ns
导通时间
导通延迟
上升时间
关断延迟
下降时间
关断时间
-
-
V
V
DD = 20 V， ID = 80 A，
GS = 10 V， RGEN = 6 Ω
td(off)
tf
-
-
toff
215
Drain-Source Diode Characteristics
-
-
-
-
-
1.25
1.2
V
I
SD =80 A， VGS = 0 V
VSD
源极 - 漏极二极管电压
-
V
ISD = 40 A， VGS = 0 V
trr
119
228
133
274
ns
nC
反向恢复时间
反向恢复电荷
IF = 80 A， dISD/dt = 100 A/μs，
VDD = 32 V
Qrr
说明：
4: 其最大值根据 T = 175 °C 时的设计确定。 在生产中，未对此条件测试产品。
J
2
www.fairchildsemi.com
FDBL0065N40 版本 C3
典型特性
1.2
1.0
0.8
0.6
0.4
0.2
700
600
500
400
300
200
100
0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
CURRENT LIMITED
BY SILICON
0.0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
图 2. 最大连续漏电流与壳体温度的关系
图 1. 标准化功耗与壳体温度的关系
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
0.10
DM
0.05
0.02
0.01
t
1
0.1
t
2
注：
占空比因数：D = t /t
1
2
SINGLE PULSE
峰值 T = P
x Z
x R
+ T
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
图 3. 标准化最大瞬态热阻抗
10000
1000
100
VGS = 10V
T
= 25 °C
C
对于温度
超过 25 °C 电流峰值降额
如下：
175 - T
I = I
C
2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
图 4. 峰值电流能力
3
www.fairchildsemi.com
FDBL0065N40 版本 C3
典型特性
10000
1000
100
10
2000
1000
若
t
R = 0
= (L)(I )/(1.3*RATED BV
- V
)
AV
AS
DSS
DD
若
t
R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AV
AS
100
10
100us
1ms
STARTING TJ = 25oC
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
1
10ms
STARTING TJ = 150oC
SINGLE PULSE
100ms
T
J
= MAX RATED
o
T
C
= 25
C
1
0.1
0.001 0.01
0.1
1
10
100 1000 10000
0.1
1
10
100 200
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
注：请参考 Fairchild 应用指南 AN7514 和 AN7515
图 5. 正向偏压安全工作区
图 6. 非箝位感性开关性能
300
240
180
120
60
400
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
100
VDD = 5V
TJ = 175 o
C
TJ = 25 o
C
10
1
TJ = 25oC
TJ = -55oC
TJ = 175oC
0
0.1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
图 7. 传递特性
图 8. 正向二极管特性
400
350
300
250
200
150
100
50
VGS
350
300
250
200
150
100
50
15V Top
10V
8V
7V
6V
VGS
15V Top
5V
10V
8V
7V
6V
5.5V
5.5V
5V Bottom
5V Bottom
5V
80μs PULSE WIDTH
80μs PULSE WIDTH
Tj=175oC
Tj=25oC
0
0.0
0
0.0
0.5
1.0
1.5
2.0
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
图 9. 饱和特性
图 10. 饱和特性
4
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FDBL0065N40 版本 C3
典型特性
5
4
3
2
1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
TJ = 175oC
TJ = 25oC
ID = 80A
VGS = 10V
0
2
4
6
8
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
图 11.RDSON 与栅极电压的关系
图 12. 标准化 RDSON 与结温的关系
1.5
1.2
0.9
0.6
0.3
0.0
1.10
1.05
1.00
0.95
0.90
VGS = VDS
ID = 1mA
I
D
= 250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
图 13. 标准化栅极阀值电压与温度的关系
图 14. 标准化漏极至源极击穿电压与结温的关系
100000
10
ID = 80A
VDD =16V
8
Ciss
VDD = 20V
10000
1000
100
VDD = 24V
6
Coss
4
2
0
Crss
f = 1MHz
GS = 0V
V
0.1
1
10
100
0
20 40 60 80 100 120 140 160 180 200 220
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
图 15. 电容与漏极－源极电压的关系
图 16. 栅极电荷与栅极－源极电压的关系
5
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FDBL0065N40 版本 C3
9.70
9.90
DETAIL "A"
B
0.60
0.80
0.40
0.60
(0.40)
10°
0.60
0.80
(2X)
11.58
11.78
(3.30)
10.28
10.48
0.50
0.70
0.20
C A B
DETAIL "A"
1
8
0.60
0.70
0.90 (8X)
0.25
1.20
7X
C
C
A B
(0.35)
0.20
8.40
10.20
TOP VIEW
5.10
4.45
DETAIL "B"
6.64
6.64
2.95
2.90
0.20
0.10
C
0.40
0.60
8.10
4.99
2.20
2.40
C
2.04
13.28
1.46
C
0.86
0.60
SIDE VIEW
2.80
1
8
1.20
0.80
9.80
10.00
A
0.20
C
A B
(8.00)
LAND PATTERN
RECOMMENDATION
1.90
2.10
5.19
5.89
4.73
(2X)
0.10
2.60
(2X)
(2X)
6.55
6.75
(7.15)
3.30
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
1.20
0.65
JEDEC MO-299, ISSUE A, DATED NOVEMBER
2009.
3X
2X
3.75
7.40
7.60
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-1994.
(8.30)
BOTTOM VIEW
10°
E) DRAWING FILE NAME: MKT-PSOF08AREV3
(0.35)
DETAIL "B"
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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