FDBL0630N150 [ONSEMI]
N 沟道，PowerTrench® MOSFET，150V，169A，6.3mΩ;
| 型号： | FDBL0630N150 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，150V，169A，6.3mΩ |
| 文件： | 总8页 (文件大小：606K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDBL0630N150
MOSFET – N-Channel,
POWERTRENCH)
150 V, 169 A, 6.3 mW
ꢀꢀ
www.onsemi.cn
•ꢀꢁꢂꢃ r
•ꢀTyp Q
= 5 mW (ꢄ V = 10 V， I = 80 A)
GS D
DS(on)
= 70 nC ꢄ V = 10 V， I = 80 A
g(tot)
GS
D
V
r
MAX
I MAX
D
DSS
DS(ON)
•ꢀUIS ꢅꢆ
150 V
6.3 mW @ 10 V
169 A
• This Device is Pb−Free and is RoHS Compliant
ၴ✈
D
•ꢀꢇꢈꢉꢊꢋꢌꢍ
•ꢀꢇꢈꢉꢎ
•ꢀꢇꢈꢏꢌꢐ
•ꢀꢉꢌꢇꢑ
•ꢀꢉꢒꢓꢔ
G
S
•ꢀꢕꢖꢅꢗꢘꢍ
•ꢀUPS ꢙꢅꢎꢗꢘꢍ
•ꢀꢚꢅ
MOSFET — N−Channel
•ꢀꢛꢜꢝꢞ
°
ꢁꢂꢁꢃꢄ(T = 25 C, ꢀꢁꢀꢂꢃꢄ)
J
ꢂꢅ
VDSS
VGS
ꢆꢇ
ꢁꢃꢄ
150
ꢈꢉ
V
ꢅꢆ－⁰ꢆꢇꢁ
᧥ꢆ－⁰ꢆꢇꢁ
H−PSOF8L 11.68x9.80
CASE 100CU
20
V
I
D
169
A
ꢅꢆꢇἡ－ঽ (V = 10 V) (Ỉ 1)
GS
°
MARKING DIAGRAM
T
= 25 C
C
°
ꢂꢅꢇἡ
T
C
= 25 C
ᒑꢃ3
502
EAS
ꢄꢂ↺༉்Ჟ (Ỉ 2)
ꢅ૧
mJ
W
$Y&Z&3&K
FDBL
0630N150
P
D
500
°
°
ᡕ᪗ 25 C ៖ℝ⍭
3.3
W/ C
°
T , T
࿅ꢆꢇസꢈꢈႆ
−55 to +175
J
STG
C
°
C/W
R
ণೃꢉŔ⋍ℋ
0.3
43
q
JC
JA
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code
°
C/W
R
ণೃ▏⋍ℋᣠଇꢊ(Ỉ 3)
q
&Z
&3
&K
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(ꢋꢉᚡᝧ)
= Lot Run Traceability Code
FDBL0630N150 = Specific Device Code
ୢꢇꢁᡕ᪗ᣠଇ⍭ൺꢊጸꢌꢍꢎŔꢊීꢏ，ꢐꢑꢒ்ꢓᔿꢔ。ୢᡕ᪗Ûĵ
᪩{℠ꢊ，෦ៀẵƽᚑꢐꢑꢅ்，ꢒ்ꢓොೄꢐꢑᔿꢔ，ᅑ
ڭ
ꢒ∰ሇ。 1. ꢇἡַАণꢈŔ℠Ж。
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
2. ꢇዿ̥ꢇ，ᡇ T = 25°C, L = 0.24 mH, I = 64 A, V = 100 V，↺༉
J
AS
DD
៖ͥ，V = 100 V
DD
ؙnণೃꢉꢇꢉೃ▏⋍ℋ+ꢇ，͖ꢌ，ꢉ⋍ꢋꢉൺ)ꢕꢅꢆ
ჵ௪Ŕ⋪൩᎕ጸ∲。R
̾ൺ。ᵄŔᣠଇ⍭ൺꢊn൩᎕ई2 oz ᾬŔ 1 in ⋪ƨ⛺。
3. R
q
JA
͗ꢊᚎᙱƽᚑ，͖ꢌꢖR ꢖꢋ✈ᐗŔꢇᢿᥟᚎᙱ
q
JA
θ
JC
2
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2019 − Rev. 3
FDBL0630N150CN/D
FDBL0630N150
°
ꢃꢊꢀꢀ(T = 25 C, ꢀꢁꢀꢂꢃꢄꢗ
J
ꢂꢅ
ꢆꢇ
ꢋꢄꢌꢍ
ꢁꢎꢄ ꢏꢐꢄ ꢁꢂꢄ
ꢈꢉ
ꢑꢒꢀꢀ
I
= 250 mA, V = 0 V
B
ꢅꢆ－⁰ꢆϛՏꢇꢁ
150
−
−
−
−
−
−
1
V
D
GS
VDSS
°
V
= 150 V, V = 0 V T = 25 C
GS
J
I
ꢅꢆ－⁰ꢆꢅꢇἡ
mA
mA
nA
DS
DSS
°
T = 175 C (Ỉ 4)
−
1
J
I
᧥ꢆ－⁰ꢆꢅꢇἡ
V
=
20 V
−
100
GSS
GS
GS
ꢓꢅꢀꢀ
V
I
= V , I = 250 mA
DS D
V
GS(th)
᧥ꢆೃ⁰ꢆ⃐ꢊꢇꢁ
2.0
−
2.8
5
4.0
6.3
V
°
= 80 A, V = 10 V
T = 25 C
r
ꢅꢆೃ⁰ꢆොꢇℋ
mW
mW
D
GS
J
DS(on)
°
T = 175 C (Ỉ 4)
−
14
17.5
J
ꢔꢕꢀꢀ
V
= 75V, V = 0V, f = 1 MHz
GS
C
ᩣͅꢇ
−
−
−
−
−
−
−
−
5805
536
16
−
−
pF
pF
pF
W
DS
iss
C
ᩣꢎꢇ
oss
C
֭
ױ
Āᩣꢇ −
rss
R
᧥ꢆℋᑷ
f = 1 MHz
2.2
−
g
Q
ई10 V Ŕ᧥ꢆማꢇ็
⃐ꢊ᧥ꢆꢇ็
V
GS
V
GS
V
DD
V
DD
= 0 to 10 V, V = 75 V, I = 80 A
70
90
13
−
nC
nC
nC
nC
g(ToT)
DD
D
Q
= 0 to 2 V, V = 75 V, I = 80 A
10.5
32.5
10
g(th)
DD
D
= 75 V, I = 80 A
Q
᧥ꢆ－⁰ꢆ᧥ꢆꢇ็
᧥ꢆ－ꢅꢆ “݃Ҳ”ꢇ็
D
gs
Q
= 75 V, I = 80 A
−
gd
D
ꢖꢑꢀꢀ
V
DD
= 75 V, I = 80 A, V = 10 V, R
= 6 W
t
ො៖
−
−
−
−
−
−
−
80
−
ns
ns
ns
ns
ns
ns
D
GS
GEN
on
t
t
ොზ៖
⛺ԧ៖
39
30
70
23
−
d(on)
t
r
−
͓ឍზ៖
⛻ℝ៖
−
d(off)
t
f
−
t
͓ឍ៖
130
off
ꢆꢗ－ꢘꢗꢙꢗꢇꢀꢀ
⁰ꢆ－ꢅꢆlꢆ
ٱ
ꢇꢁ I
= 80 A, V = 0 V
V
SD
−
−
−
−
−
1.25
1.2
V
V
SD
GS
I
= 40 A, V = 0 V
−
SD
GS
I = 80 A, dI /dt = 100 A/ms, V = 120 V
F
T
֭
ױ
ቂ૭៖ ֭
ױ
ቂ૭ꢇ็ 108
323
125
467
ns
nC
SD
DD
rr
Q
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(ꢋꢉᚡᝧ)
ꢀꢁꢀꢂꢃꢄ，“ꢇᷴሇ”ጸꢌꢍꢎŔ᠏ᐠꢍἫᚥꢑ⛻Ŕ
ڡ
ሇ்ꢋᝐ。ୢई⛽
ꢑ⛻᪠ጜ，ڡ
ሇ்ꢒ்⛾“ꢇᷴሇ”ጸ ꢌᐠꢍሇ்ꢋᝐ⛽⛰ೄ。
4. ͖ᣠଇꢊᨙᕎ T = 175°C ៖Ŕᚎᙱ̾ൺ。ई⛿ꢌ，ᤊෙᵄꢑἫᚥ
ڡ
。 J
www.onsemi.cn
2
FDBL0630N150
ꢏꢐꢀꢀ
200
160
120
80
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40
0
25
0
25
50
75
100 125 150 175
50
75
100 125 150 175 200
T , CASE TEMPERATURE(°C)
C
T , CASE TEMPERATURE(°C)
C
ꢚ2. ꢁꢂꢋꢌꢆꢃἡ⛾ijꢞႆꢉꢑꢊ
ꢚ1. ꢛꢜꢝѿꢈ⛾ijꢞႆꢉꢑꢊ
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
0.01
t1
0.1
t2
Ỉ:
ՀՊᶴ
ࣀ
ᝐ:D = t / t 1
2
x R
SINGLE PULSE
໐ꢊT = P x Z
+ T
JA C
q
q
J
DM
JA
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
ꢚ3. ꢛꢜꢝꢁꢂꢍꢕꢎꢏᑷ
10000
1000
100
V
GS
= 10 V
T
= 25°C
C
ෙnꢈႆ
ᡕ᪗25°Cꢇἡ໐ꢊℝ⍭
ୢ⛻：
175 * TC
Ǹ
I + I2 ƪ ƫ
150
SINGLE PULSE
10
10
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
ꢚ4. ໐ꢄꢃἡꢐѻ
www.onsemi.cn
3
FDBL0630N150
ꢏꢐꢀꢀ (continued)
1000
100
10
1000
ꢏR= 0
= (L)(I ) / (1.3 * ⍭ൺ BV
t
AV
− V
)
AS
DSS
DD
ꢏ R p 0
= (L / R) ln [(I * R) / (1.3 * ⍭ൺ BV
t
AV
− V ) + 1]
DD
AS
DSS
100
10
1
100 ms
STARTING T = 25 °C
J
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
1 ms
1
SINGLE PULSE
10 ms
T
T
= MAX RATED
= 25°C
J
STARTING T = 150°C
J
100 ms
C
0.1
1
10
100
0.001 0.01 0.1
1
10 100 1000 10000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (ms)
AV
Ỉ:
ꢌꢋꢉꢖONꢖSemiconductorꢖꢍ✈ꢎԷꢖAN7514
ꢇꢖAN7515
ꢚ5. ᵃ
ױ
ȯի൩͈࿅ļԚ ꢚ6. ꢑꢒꢉዿꢀꢖꢑꢀꢐ
400
200
160
120
80
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
= 5 V
100
10
1
DD
T = 175°C
J
T = 175°C
J
T = 25°C
J
T = −55°C
J
T = 25°C
J
40
0.1
0.0
0
2
3
4
5
6
7
8
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
ꢚ7. Āꢓꢀꢀ
ꢚ8. ᵃ
ױ
ꢙꢗꢇꢀꢀ 300
250
200
150
100
50
300
250
200
150
100
50
VGS
15 V Top
10 V
8 V
7 V
6 V
5.5 V
5 V Bottom
VGS
15 V Top
10 V
8 V
7 V
6 V
5.5 V
5 V Bottom
5 V
5 V
80 ms PULSE WIDTH
Tj = 175°C
80 ms PULSE WIDTH
Tj = 25°C
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
ꢚ9. ꢔ
٬
ꢀꢀ ꢚ10. ꢔ
٬
ꢀꢀ www.onsemi.cn
4
FDBL0630N150
ꢏꢐꢀꢀ (continued)
3.0
50
40
30
20
10
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
D
= 80 A
2.5
2.0
1.5
1.0
0.5
0.0
T = 175°C
J
I
= 80 A
= 10 V
D
T = 25°C
V
J
GS
2
4
6
8
10
−80 −40
0
40
80
120 160 200
VG , GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
ꢚ11. Rdson⛾ꢟꢗꢃի
ꢚ12. ꢛꢜꢝRdson⛾ꢕꢞ
1.5
1.2
0.9
0.6
0.3
0.0
1.10
1.05
1.00
0.95
0.90
V
= V
DS
= 250 mA
I
D
= 1 mA
GS
I
D
−80 −40
0
40
80
120 160 200
−80 −40
0
40
80
120 160 200
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
ꢚ13. ꢛꢜꢝꢟꢗꢖꢄꢃի⛾ꢞႆ
ꢚ14. ꢛꢜꢝꢆꢗꢗꢘꢗꢠꢘꢃի⛾ꢕꢞ
10000
10
I
D
= 80 A
V
= 60 V
V
DD
C
C
iss
V
= 75 V
DD
8
6
4
2
0
1000
100
10
= 90 V
DD
oss
C
rss
f = 1 MHz
VGS = 0 V
1
0.1
1
10
100 200
0
20
40
60
80
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
ꢚ15. ꢃꢡ⛾ꢆꢗ－ꢘꢗꢃի
ꢚ16. ꢟꢗꢃꢙ⛾ꢟꢗ－ꢘꢗꢃի
www.onsemi.cn
5
FDBL0630N150
ꢚꢛꢢꢣ
ꢤꢍ
FDBL0630N150
ꢤꢍꢛꢜ
FDBL0630N150
ꢥꢝ
ꢦꢝꢧꢨ
H−PSOF8L 11.68x9.80
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
www.onsemi.cn
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE C
DATE 22 MAY 2023
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
= Assembly Location
= Year
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
XXXX = Specific Device Code
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13813G
H−PSOF8L 11.68x9.80
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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