FDC604P [ONSEMI]
P 沟道，PowerTrench® MOSFET，1.8V Specified，-20V，-5.5A，33mΩ;
| 型号： | FDC604P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，1.8V Specified，-20V，-5.5A，33mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel,
POWERTRENCH®, Specified
V
R
MAX
I MAX
D
DSS
DS(on)
−20 V
33 mW @ −4.5 V
43 mW @ −2.5 V
60 mW @ −1.8 V
−5.5 A
1.8 V
FDC604P
General Description
S
D
D
This P−Channel 1.8 V specified MOSFET uses onsemi’s low
voltage POWERTRENCH process. It has been optimized for battery
power management applications.
G
D
D
Features
• −5.5 A, −20 V.
TSOT23 6−Lead
(SUPERSOTt−6)
CASE 419BL
R
R
R
= 33 mW @ V = −4.5 V
GS
DS(ON)
DS(ON)
DS(ON)
= 43 mW @ V = −2.5 V
GS
= 60 mW @ V = −1.8 V
GS
MARKING DIAGRAM
• Fast switching speed
• High Performance Trench Technology for Extremely Low R
• These Device is Pb−Free and Halogen Free
DS(ON)
604M
G G
Applications
1
• Battery Management
• Load Switch
• Battery Protection
604 = Specific Device Code
M
G
= Date Code
= Pb−Free Package
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
A
(Note: Microdot may be in either location)
Symbol
Parameter
Drain−Source Voltage
Value
−20
8
Unit
V
V
DSS
GSS
PIN ASSIGNMENT
Gate−Source Voltage
V
V
Drain Current
− Continuous
− Pulsed
I
D
(Note 1a)
−5.5
−20
A
1
2
3
6
5
4
Maximum Power Dissipation
(Note 1a)
(Note 1b)
P
D
W
1.6
0.8
Operating and Storage Junction
Temperature Range
_C
−55 to +150
T , T
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted
A
FDC604P
TSOT−23−6
(SUPERSOTt−6)
(Pb−Free)
3000 /
Tape & Reel
Symbol
Parameter
Value
Unit
Thermal Resistance,
°C/W
78
R
θ
JA
Junction−to−Ambient
(Note 1a)
(Note 1)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.
Thermal Resistance,
Junction−to−Case
°C/W
30
R
θ
JC
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
May, 2022 − Rev. 0
FDC604P/D
FDC604P
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
= 0 V, I = −250 mA
−20
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature Coefficient
I = −250 mA, Referenced to 25_C
D
−
−12
mV/_C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate−Body Leakage, Forward
Gate−Body Leakage, Reverse
V
DS
V
GS
V
GS
= −16 V, V = 0 V
−
−
−
−
−
−
−1
mA
nA
nA
DSS
GS
I
= 8 V, V = 0 V
100
GSSF
GSSR
DS
I
= −8 V, V = 0 V
−100
DS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
DS
= V I = −250 mA
GS, D
−0.4
−0.7
−1.5
V
GS(th)
Gate Threshold Voltage Temperature Coefficient I = −250 mA, Referenced to 25_C
−
3
−
mV/_C
DVGS(th)
DTJ
D
R
Static Drain−Source
On−Resistance
V
GS
V
GS
V
GS
= −4.5 V, I = −5.5 A
−
−
−
24
30
42
33
43
60
mW
DS(on)
D
= −2.5 V, I = −4.8 A
D
= −1.8 V, I = −4.0 A
D
I
On−State Drain Current
V
= −4.5 V, V = −5 V
−20
−
−
−
A
S
D(on)
GS
DS
DS
g
FS
Forward Transconductance
V
= −5 V, I = −3.5 A
−
23
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −10 V, V = 0 V,
−
−
−
1926
530
−
−
−
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
185
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= −10 V, I = −1 A,
−
−
−
−
−
−
−
13
11
90
45
19
4
23
20
144
72
30
−
ns
ns
d(on)
DD
GS
D
= −4.5 V, R
= 6 W
GEN
t
r
t
ns
d(off)
t
f
ns
Q
V
DD
V
GS
= −10 V, I = −3.5 A,
nC
nC
nC
g
D
= −4.5 V
Q
gs
gd
Q
7.5
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = −1.3 A (Note 2)
I
−
−
−
−1.3
−1.2
A
V
S
V
SD
V
GS
−0.7
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient resistance where the case thermal reference is defined as the solder mounting
θ
JA
surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θ
θ
JC
CA
2
a) 78°C/W when mounted on a 1in pad of 2oz copper on FR−4 board.
b) 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
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2
FDC604P
TYPICAL CHARACTERISTICS
20
15
3
V
= −4.5 V
GS
V
GS
= −1.5 V
−1.8 V
−2.5 V
−2.0 V
2.5
−1.8 V
2
1.5
1
−2.0 V
10
−2.5 V
−4.5 V
5
0
−1.5 V
0.5
10
−I DRAIN CURRENT (A)
20
0
3
2
0
5
15
1
−V , DRAIN − SOURCE VOLTAGE (V)
D,
DS
Figure 2. On−Resistance Variation with
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
1.5
1.4
1.3
0.12
0.09
I
D
= −2.8 A
I
V
= −5.5 A
D
= −4.5 V
GS
1.2
1.1
1
0.06
0.03
0
T = 125°C
A
T = 25°C
A
0.9
0.8
0.7
150
125
−50
−25
0
25
50
100
75
4
3
1
2
5
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
20
15
10
1
V
GS
= 0 V
V
DS
= −5 V
T = −55°C
A
25°C
125°C
T = 125°C
A
0.1
0.01
25°C
10
5
−55°C
0.001
0.0001
0
0.4
0.6
0.2
1.2
0.5
1
2
2.5
0.8
0
1
0
1.5
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage
Figure 5. Transfer Characteristics
Variation with Source Current and Temperature
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3
FDC604P
TYPICAL CHARACTERISTICS (Continued)
5
4
3
2
3500
f = 1 MHz
= 0 V
I
D
= −5.5 A
V
DS
= −5 V
V
GS
−10 V
3000
2500
−15 V
C
ISS
2000
1500
1000
500
C
OSS
1
0
C
RSS
0
0
5
10
15
20
25
100
0.1
10
15
20
0
5
Q ,GATE CHARGE (nC)
G
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
5
4
3
100
10
1
R
LIMIT
DS(ON)
SINGLE PULSE
100 μs
1 ms
R
A
= 156°C/W
θ
JA
T = 25°C
10 ms
100 ms
1 s
2
DC
V
= −4.5 V
GS
0.1
SINGLE PULSE
= 156°C/W
1
0
R
θ
JA
T = 25°C
A
0.01
1
0.1
0.1
100
1
10
10
−V , DRAIN−SOURCE VOLTAGE (V)
DS
SINGLE PULSE TIME (s)
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
1
D = 0.5
R
(t) = r(t) * R
q
JA
q
JA
0.2
0.1
R
= 156°C/W
0.1
q
JA
0.05
0.02
0.01
P
(pk)
t
1
0.01
t
2
Single Pulse
T − T = P * R
(t)
JA
q
J
A
Duty Cycle, D = t / t
1
2
0.001
1000
0.0001
0.01
100
0.001
1
10
t , TIME (s)
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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4
FDC604P
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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