FDC606P [ONSEMI]
P 沟道，PowerTrench® MOSFET，1.8V 指定，-12V，-6A，26mΩ;
| 型号： | FDC606P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，1.8V 指定，-12V，-6A，26mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDC606P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
ON Semiconductor’s low voltage PowerTrench
• –6 A, –12 V.
RDS(ON) = 26 mΩ @ VGS = –4.5 V
process. It has been
optimized
for
battery
R
R
DS(ON) = 35 mΩ @ VGS = –2.5 V
DS(ON) = 53 mΩ @ VGS = –1.8 V
power management applications.
Applications
• Fast switching speed
• Battery management
• Load switch
• Battery protection
• High performance trench technology for extremely
low RDS(ON)
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–12
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
8
–6
–20
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
0.8
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
RθJA
RθJC
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
3000 units
.606
FDC606P
7’’
8mm
Publication Order Number:
FDC606P/D
2001 Semiconductor Components Industries, LLC.
September-2017, Rev. 5
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–12
V
VGS = 0 V,
ID = –250 µA
Breakdown Voltage Temperature
–3
∆BVDSS
∆TJ
ID = –250 µA,Referenced to 25°C
mV/°C
Coefficient
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –10 V, VGS = 0 V
–1
100
–100
µA
nA
nA
IGSSF
IGSSR
VGS = 8 V,
VGS = –8 V,
VDS = 0 V
VDS = 0 V
On Characteristics
(Note 2)
Gate Threshold Voltage
VGS(th)
–0.4
–20
–0.5
2.5
–1.5
V
VDS = VGS
ID = –250 µA,Referenced to 25°C
,
ID = –250 µA
Gate Threshold Voltage
∆VGS(th)
∆TJ
mV/°C
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –6 A
21
26
34
28
26
35
53
35
mΩ
V
V
GS = –2.5 V, ID = –5 A
GS = –1.8 V, ID = –4 A
VGS = –4.5 V, ID = –6 A,TJ=125°C
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VGS = –4.5 V,
VDS = –5 V,
VDS = –5 V
ID = –6 A
A
S
25
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1699
679
423
pF
pF
pF
VDS = –6 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
10
89
70
18
3
19
20
142
112
25
ns
ns
ns
V
DD = –6 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6 Ω
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = –6 V,
ID = –6 A,
V
GS = –4.5 V
4.2
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
–1.2
A
V
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –1.3 A (Note 2)
–0.6
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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2
Typical Characteristics
2.6
2.4
2.2
2
20
-2.5V
VGS = -4.5V
-1.8V
VGS=-1.5V
-3.0V
15
10
5
1.8
1.6
1.4
1.2
1
-1.8V
-1.5V
-2.0V
-2.5V
10
-3.0V
-4.5V
0
0.8
0
0.5
1
1.5
2
2.5
3
0
5
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.3
1.2
1.1
1
0.08
ID = -6A
ID = -3A
V
GS = -4.5V
0.07
0.06
0.05
0.04
0.03
0.02
0.01
TA = 125oC
TA = 25oC
0.9
0.8
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
25oC
125oC
TA = -55oC
VGS = 0V
VDS = -5V
10
15
10
5
TA = 125oC
1
0.1
0.01
25oC
-55oC
0.001
0
0.0001
0.5
0.75
1
1.25
1.5
1.75
2
0
0.2
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
5
2500
2000
1500
1000
500
VDS = -4V
f = 1 MHz
GS = 0 V
ID = -6A
-6V
V
CISS
4
3
2
1
0
-8V
COSS
CRSS
0
0
5
10
15
20
25
0
3
6
9
12
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
8
SINGLE PULSE
RDS(ON) LIMIT
R
θJA = 156°C/W
100µs
T
A = 25°C
10
1
1ms
10ms
100ms
1s
6
DC
4
VGS = -4.5V
SINGLE PULSE
0.1
0.01
R
θJA = 156oC/W
TA = 25oC
2
0
0.1
1
10
100
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
R
θJA(t) = r(t) * RθJA
0.2
θJA = 156oC/W
0.1
0.1
0.05
P(pk)
0.02
t1
t2
J - TA = P * RθJA(t)
0.01
0.01
T
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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