FDD2670 [ONSEMI]
N 沟道，PowerTrench® MOSFET，200V，3.6A，130mΩ;
| 型号： | FDD2670 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，200V，3.6A，130mΩ |
| 文件： | 总6页 (文件大小：436K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD2670
200V N-Channel PowerTrench MOSFET
General Description
Features
This
N-Channel
MOSFET has been designed
• 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
• Low gate charge
specifically to improve t he overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• Fas t switching speed
These MOSFET's feature faster switching and lower
gate charge than other MOSFET's with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• High power and current handling capability
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
200
VGSS
ID
Gate-Source Voltage
V
A
±20
Drain Current – Continuous
Drain Current – Pulsed
(Note 1)
3.6
20
70
PD
W
Maximum Power Dissipation @ TC = 25°C
(Note 1)
(Note 1a)
(Note 1b)
(Note 3)
3.2
@
TA = 25°C
TA = 25°C
1.3
@
dv/dt
Peak Diode Recovery dv/dt
3.2
V/ns
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
1.8
96
RθJC
°C/W
°C/W
(Note 1b)
RθJA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD2670
FDD2670
13’’
16mm
2500 units
Publication Order Number:
2001 Semiconductor Components Industries, LLC.
FDD2670/D
November-2017, Rev. 2
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 100 V, ID = 3.6 A
375
3.6
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
200
V
VGS = 0 V, ID = 250 µA
Breakdown Voltage Temperature
Coefficient
214
∆BVDSS
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
V
V
DS = 160 V, VGS = 0 V
GS = 20 V, VDS = 0 V
GS = –20 V, VDS = 0 V
1
µA
NA
NA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
2
4
4.5
V
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
Temperature Coefficient
-10
∆VGS(th)
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 10 V, ID = 3.6 A TJ = 125°C
ID = 3.6 A
100
205
130
275
mΩ
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 5 V,
VDS = 5 V
ID = 3.6 A
20
A
S
Forward Transconductance
15
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1228
112
17
PF
PF
pF
VDS = 100 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
13
8
23
16
48
40
43
ns
ns
V
DD = 100 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 10 V,
30
25
27
7
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 100 V,
VGS = 10 V
ID = 3.6 A,
10
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
VSD
V
GS = 0 V, IS = 2.1 A
(Note 2)
0.7
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
o
o
a) R θJA= 40 C/W when
b) RθJA= 96 C/W on a
2
minimum mounting pad.
mounted on a 1in pad of
2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. ISD ≤ 3A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
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2
Typical Characteristics
1.6
1.4
1.2
1
20
VGS = 10V
6.5V
VGS = 5.5V
15
10
5
6.0V
6.0V
6.5V
10.0V
5.5V
0.8
0
0
4
8
12
16
20
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.3
0.2
0.1
0
2.5
ID = 3.6A
GS = 10V
ID = 1.8 A
V
2
1.5
1
TA = 125oC
TA = 25oC
0.5
0
-50
-25
0
25
50
75
100
125
150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
24
18
12
6
VGS = 0V
VDS = 15V
TA = 125oC
10
1
25oC
-55oC
TA = 125oC
0.1
25oC
-55oC
0.01
0.001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
3
4
5
6
7
8
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
15
2000
1500
1000
500
0
ID = 3.6 A
VDS = 40V
f = 1MHz
VGS = 0 V
70
12
9
100 V
CISS
6
3
COSS
CRSS
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
40
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
100
80
60
40
20
0
100µs
SINGLE PULSE
RθJA = 96°C/W
RDS(ON) LIMIT
10
1
10ms
100ms
1s
T
A = 25°C
10s
DC
0.1
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + Rθ
JA
RθJA = 96°C/W
0.2
0.1
P(pk)
0.1
t1
0.05
0.02
t2
TJ - TA = P * RθJA(t)
0.01
SINGLE PULSE
0.01
Duty Cycle, D = t1 / t2
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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