FDD3672-F085 [ONSEMI]
N 沟道,UltraFET® Trench MOSFET,100V,44A,28mΩ;型号: | FDD3672-F085 |
厂家: | ONSEMI |
描述: | N 沟道,UltraFET® Trench MOSFET,100V,44A,28mΩ 开关 晶体管 |
文件: | 总8页 (文件大小:338K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FDD3672-F085
N-Channel UltraFET Trench MOSFET
100V, 44A, 28mΩ
Applications
Features
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A
Typ Qg(10) = 24nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Publication Order Number:
FDD3672-F085/D
©2011 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
100
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
VGS
±20
Drain Current Continuous (TC < 30oC, VGS = 10V)
44
ID
A
Pulsed
See Figure 4
73
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25oC
(Note 1)
mJ
W
W/oC
oC
144
0.96
TJ, TSTG Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper
pad area
1.04
52
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2500 units
FDD3672
FDD3672-F085
TO-252AA
330mm
16mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
100
-
-
-
-
-
1
V
V
DS = 80V, VGS = 0V
TJ = 150oC
-
-
-
μA
nA
250
±100
IGSS
VGS = ±20V
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
D = 44A, VGS= 10V
2
-
3
4
V
Ω
Ω
Ω
I
0.024
0.028
0.063
0.028
0.047
0.074
ID = 21A, VGS= 6V,
-
ID = 44A, VGS= 10V, TJ = 175°C
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1635
240
60
-
-
pF
pF
pF
nC
nC
nC
nC
nC
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
-
Qg(TOT)
Qg(TH)
Qgs
VGS = 0 to 10V
24
36
4.5
-
VGS = 0 to 2V
3
V
I
DD = 50V
D = 44A
Ig = 1.0mA
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
8.3
5.3
5.8
Qgs2
Qgd
-
-
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2
Electrical Characteristics TJ = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
78
-
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
12
37
24
44
-
-
VDD = 50V, ID = 44A,
VGS = 10V, RGS = 11Ω
td(off)
tf
-
-
toff
70
Drain-Source Diode Characteristics
I
SD = 44A
-
-
-
-
0.9
0.8
44
1.25
1.0
57
V
V
VSD
Source to Drain Diode Voltage
ISD = 21A
trr
Reverse Recovery Time
ns
nC
IF = 44A, dISD/dt = 100A/μs
Qrr
Reverse Recovery Charge
58
76
Notes:
o
1: Starting T = 25 C, L = 0.2mH, I = 27A
J
AS
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3
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
10
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
Typical Characteristics
100
10
1
200
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
10
STARTING TJ = 25oC
SINGLE PULSE
T
J
= MAX RATED
o
T
C
= 25
C
1
1ms
STARTING TJ = 150oC
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
10ms
DC
0.1
0.001
0.01
0.1
1
10
100
1
10
100
300
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
80
80
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10V
VDD = 5V
60
60
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V
40
20
0
40
TJ = 25oC
20
TJ = 175oC
TJ = -55oC
0
0
1
2
3
4
5
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
100
3.0
PULSE DURATION = 80μs
ID = 44A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
80
60
40
20
0
2.5
2.0
1.5
1.0
0.6
TJ = 175oC
TJ = 25oC
ID = 44A
VGS = 10V
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
Typical Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS = VDS
ID = 5mA
I
D
= 250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
10000
ID = 44A
VDD = 50V
8
Ciss
VDD = 40V
1000
VDD = 60V
6
Coss
4
2
0
100
f = 1MHz
GS = 0V
Crss
V
10
0.1
0
5
10
15
20
25
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
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6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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