FDD6637-F085 [ONSEMI]
P 沟道，PowerTrench® MOSFET，-35V，-21A，18mΩ;
| 型号： | FDD6637-F085 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-35V，-21A，18mΩ 开关 晶体管 |
| 文件： | 总8页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD6637-F085
®
P-Channel PowerTrench MOSFET
-35V, -21A, 18mΩ
Applications
Features
Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A
Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A
Typ Qg(10) = 45nC at VGS = -10V
Inverter
Power Supplies
High performance trench technology for extremely low
rDS(on).
Qualified to AEC Q101
RoHS Compliant
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FDD6637-F085/D
1
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VDS(Avalanche) Drain to Source Avalanche Voltage (maximum)
Parameter
Ratings
Units
Drain to Source Voltage
-35
V
V
V
-45
±25
VGS
Gate to Source Voltage
Drain Current Continuous (TC < 155oC, VGS = 10V)
-21
ID
A
Pulsed
See Figure 4
61
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
Dreate above 25oC
(Note 1)
mJ
W
W/oC
oC
68
0.46
TJ, TSTG
Operating and Storage Temperature
-55 to + 175
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
2.2
oC/W
oC/W
40
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2500 units
FDD6637
FDD6637-F085
TO-252
13”
12mm
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = -28V, VGS = 0V
VGS = ±25V
-35
-
-
-
-
-1
V
-
-
μA
nA
IGSS
±100
On Characteristics
VGS(th)
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = -250μA
-1
-
-1.6
9.7
-3
11.6
18
18
-
V
mΩ
S
I
D = -14A, VGS= -10V
Drain to Source On Resistance
Forward Transconductance
ID = -11A, VGS= -4.5V
-
14.4
15.3
35
ID = -14A, VGS= -10V, TC = 150oC
VDS = -5V, ID = -14A
-
-
Dynamic Characteristics
Ciss
Input Capacitance
-
2370
470
250
3.6
45
-
-
pF
pF
pF
Ω
VDS = -20V, VGS = 0V,
f = 1MHz
Coss
Crss
RG
Output Capacitance
-
-
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
-
-
Qg(TOT)
Qg(5)
Qgs
Total Gate Charge at -10V
Total Gate Charge at -5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VGS = 0 to -10V
-
63
35
-
nC
nC
nC
nC
VGS = 0 to -5V
-
25
VDD = -20V
D = -14A
I
-
7
Qgd
-
10
-
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2
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
-
-
-
-
18
10
62
36
32
20
ns
ns
ns
ns
VDD = -20V, ID = -1A,
VGS = -10V,
Turn-Off Delay Time
Fall Time
100
58
RGEN = 6Ω
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Voltage
Reverse Recovery Time
ISD = -14A
-
-
-
-0.8
28
-1.2
37
V
ns
nC
IF = -14A, dISD/dt = 100A/μs
Qrr
Reverse Recovery Charge
15
20
Notes:
o
1: Starting T = 25 C, L = 1mH, I = -11A, V =10V, V =-35V during the inductor charging time and 0V during the time in avalanche
J
AS
GS
DD
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
www.onsemi.com
3
Typical Characteristics
70
60
50
40
30
20
10
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
V
GS
= -10V
V
GS
= -4.5V
R
θJC
= 2.2oC/W
50
25
75
100
125
150
175
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
10
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
Typical Characteristics
60
10
300
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
1ms
STARTING TJ = 25oC
10
1
10ms
DC
STARTING TJ = 150oC
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
T
J
= MAX RATED
o
T
C
= 25
C
LIMITED BY r
DS(on)
1
0.1
0.001
0.01
0.1
1
10
100
0.3
1
10
90
tAV, TIME IN AVALANCHE (ms)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
100
100
VGS = -10V
VGS =-6V
VGS =-5V
VGS =-4.5V
VGS =-4V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
80
60
40
20
0
80
VDD = -5V
TJ = -55oC
TJ = 25oC
VGS =-3.5V
VGS = -3V
60
TJ = 175oC
40
20
0
0
1
2
3
4
5
6
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
70
60
1.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = -14A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
TJ = 175oC
ID = -14A
TJ = 25oC
VGS = -10V
2
4
6
8
10
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
Typical Characteristics
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.10
1.05
1.00
0.95
0.90
VGS = VDS
ID = -250μA
I
D
= -250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
10000
V
DD
= -10V
8
6
4
2
0
V
= -20V
DD
Ciss
V
DD
= -30V
1000
Coss
f = 1MHz
Crss
VGS = 0V
100
0.1
0
10
20
30
40
50
1
10
100
Q , GATE CHARGE(nC)
g
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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