FDD7N25LZTM [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，250 V，6.2A，550mΩ，DPAK;
| 型号： | FDD7N25LZTM |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，250 V，6.2A，550mΩ，DPAK 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：753K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 2016
FDD7N25LZ
N-Channel UniFET MOSFET
250 V, 6.2 A, 550 mΩ
TM
Features
Description
•
•
•
•
•
•
•
RDS(on) = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A
Low Gate Charge (Typ. 12 nC)
Low Crss (Typ. 8 pF)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
100% Avalanche Tested
Improved dv/dt Capability
ESD Improved Capability
RoHS Compliant
Applications
•
•
•
•
•
LCD/LED/PDP TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
D
G
G
S
D-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
Parameter
FDD7N25LZTM
Unit
V
Drain to Source Voltage
Gate to Source Voltage
250
±20
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
6.2
ID
Drain Current
A
3.7
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
25
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
115
5.5
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
5.6
mJ
V/ns
W
W/oC
oC
10
(TC = 25oC)
- Derate Above 25oC
56
PD
Power Dissipation
0.45
-55 to +150
300
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
oC
Thermal Characteristics
Symbol
Parameter
Unit
FDD7N25LZTM
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.2
oC/W
110
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. 1.5
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDD7N25LZ
DPAK
Tape and Reel
330 mm
16 mm
2500 units
FDD7N25LZTM
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V, TC = 25oC
D = 250 μA, Referenced to 25oC
DS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125oC
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
250
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.25
V/oC
V
-
-
-
-
-
-
-
-
1
IDSS
Zero Gate Voltage Drain Current
μA
10
10
-10
IGSSF
IGSSR
Gate to Body Leakage Current, Forward
Gate to Body Leakage Current, Reverse
μA
μA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
1.0
-
2.5
0.55
0.57
-
V
Ω
S
V
GS = 10 V, ID = 3.1 A
-
-
-
0.43
0.45
7
Static Drain to Source On Resistance
Forward Transconductance
VGS = 5 V, ID = 3.1 A
VDS = 20 V, ID = 3.1 A
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
480
65
8
635
85
12
16
-
pF
pF
pF
nC
nC
nC
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
12
1.5
4
V
V
DS = 250 V ID = 6.2 A,
GS = 10 V
(Note 4)
Qgd
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
10
15
75
30
30
40
ns
ns
ns
ns
VDD = 250 V, ID = 6.2 A,
GS = 10 V, RG = 25 Ω
V
160
70
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
6.2
25
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 6.2 A
-
V
130
0.6
ns
μC
V
GS = 0 V, ISD = 6.2 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 6 mH, I = 6.2 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 6.2 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. 1.5
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
20
VGS = 10.0V
10
7.0V
5.0V
3.5V
3.0V
2.5V
10
150oC
25oC
1
-55oC
1
* Notes :
1. VDS = 20V
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.1
2. 250μs Pulse Test
0.1
0.03
1
2
3
4
5
0.03
0.1
1
10
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.5
100
1.2
150oC
10
1
25oC
0.9
VGS = 10V
VGS = 20V
0.6
Notes:
1. VGS = 0V
* Note : TJ = 25oC
12 15
2. 250μs Pulse Test
0.3
0.1
0.0
0
3
6
9
18
0.4
0.8
1.2
1.6
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
1000
Ciss
VDS = 50V
V
DS = 125V
8
6
4
2
0
VDS = 200V
Coss
100
* Note:
1. VGS = 0V
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
10
5
= C + C
ds gd
= C
gd
oss
rss
* Note : ID = 6.2A
9
0
3
6
12
0.1
1
10
30
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. 1.5
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
* Notes :
1. VGS = 0V
* Notes :
1. VGS = 10V
0.5
2. ID = 250uA
2. ID = 3.1A
0.8
-80
0
-80
-40
0
40
80
120
160
-40
0
40
80
120
160
o
o
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
40
7
6
5
4
3
2
1
0
30μs
10
100μs
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
* Notes :
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0.1
1
10
100
400
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
5
1
0.5
0.2
0.1
PDM
t1
0.05
t2
0.1
0.02
0.01
* Notes :
1. ZθJC(t) = 2.2oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
t , Rectangular Pulse Duration [sec]
1
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. 1.5
4
I
= const.
G
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. 1.5
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. 1.5
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FDD7N60NZTM
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2
FAIRCHILD
FDD8424H_11
Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
FAIRCHILD
FDD8424H_F085
40V Dual N & P-Channel PowerTrench® MOSFET. (Transferred to alternate site. Please contact local reps for details), 5LD, MOLDED TO252, (DPAK) OPTION AD, 2500/TAPE REEL
FAIRCHILD
FDD8424H_F085A_13
Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
FAIRCHILD
FDD8426H
Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明