FDD8878 [ONSEMI]
30V N沟道PowerTrench® MOSFET;
| 型号： | FDD8878 |
| 厂家： | 
ONSEMI |
| 描述： | 30V N沟道PowerTrench® MOSFET 开关 晶体管 |
| 文件： | 总14页 (文件大小：468K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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March 2015
FDD8878 / FDU8878
N-Channel PowerTrench® MOSFET
30V, 40A, 15mΩ
General Description
Features
rDS(ON) = 15mΩ, VGS = 10V, ID = 35A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A
r
DS(ON) and fast switching speed.
High performance trench technology for extremely low
rDS(ON)
Low gate charge
Application
DC / DC Converters
High power and current handling capability
RoHS Compliant
D
S
D
G
G
S
I-PAK
(TO-251AA)
D-PAK
(TO-252)
G D S
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev.1.2
1
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
V
±20
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
40
36
A
A
ID
11
A
Figure 4
25
A
EAS
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
mJ
W
W/oC
oC
40
PD
0.27
TJ, TSTG
Operating and Storage Temperature
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-251
3.75
100
52
oC/W
oC/W
oC/W
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Package Marking and Ordering Information
Device Marking
Device
FDD8878
FDU8878
Package
TO-252AA
TO-251AA
Reel Size
13”
Tape Width
Quantity
FDD8878
16mm
N/A
2500 units
75 units
FDU8878
Tube
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
30
-
-
-
-
-
-
V
V
DS = 24V
1
IDSS
µA
nA
VGS = 0V
TC = 150oC
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
D = 35A, VGS = 10V
ID = 35A, VGS = 4.5V
1.2
-
2.5
V
I
-
-
0.011 0.015
0.014 0.0185
rDS(ON)
Drain to Source On Resistance
Ω
I
D = 35A, VGS = 10V,
-
0.018 0.024
TJ = 175oC
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. 1.2
2
Dynamic Characteristics
CISS
COSS
CRSS
RG
Input Capacitance
-
-
-
-
-
-
-
-
-
-
880
195
110
3.1
19
-
-
pF
pF
pF
Ω
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
-
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
26
14
1.3
-
nC
nC
nC
nC
nC
nC
10
VDD = 15V
D = 35A
Ig = 1.0mA
VGS = 0V to 1V
0.9
2.6
1.7
4.5
I
Qgs2
Qgd
-
-
Switching Characteristics (VGS = 10V)
tON
td(ON)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
129
ns
ns
ns
ns
ns
ns
7
-
-
79
38
27
-
VDD = 15V, ID = 35A
VGS = 4.5V, RGS = 16Ω
td(OFF)
tf
Turn-Off Delay Time
Fall Time
-
-
tOFF
Turn-Off Time
97
Drain-Source Diode Characteristics
I
I
SD = 35A
SD = 3.2A
-
-
-
-
-
-
-
-
1.25
1.0
23
V
V
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
ISD = 35A, dISD/dt = 100A/µs
ISD = 35A, dISD/dt = 100A/µs
ns
nC
QRR
Reverse Recovered Charge
9
Notes:
1: Package current limitation is 35A.
2: Starting T = 25°C, L = 65uH, I = 28A, V = 27V, V = 10V.
J
AS
DD
GS
3
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
DD8878 / FDU8878 Rev. 1.2
3
F
Typical Characteristics TC = 25°C unless otherwise noted
1.2
50
CURRENT LIMITED
BY PACKAGE
1.0
40
0.8
V
= 10V
GS
30
0.6
V
= 4.5V
GS
20
0.4
10
0
0.2
0
150
0
25
50
75
100
175
125
o
175
25
50
75
100
125
150
T
, CASE TEMPERATURE ( C)
o
C
T
, CASE TEMPERATURE ( C)
C
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
0.01
PEAK T = P x Z
x R
+ T
J
DM
θJC
θJC C
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
10
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
500
o
T
= 25 C
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
V
= 4.5V
GS
100
V
= 10V
GS
30
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
10
10
10
Figure 4. Peak Current Capability
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. 1.2
4
Typical Characteristics TC = 25°C unless otherwise noted
1000
100
10
500
If R = 0
= (L)(I )/(1.3*RATED BV
OPERATION IN THIS
AREA MAY BE
t
AV
- V
DD
)
AS
DSS
If R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV
LIMITED BY r
DS(ON)
t
AV
- V ) +1]
DD
AS
DSS
10µs
100
100µs
o
STARTING T = 25 C
J
10
o
1
STARTING T = 150 C
J
1ms
10ms
DC
SINGLE PULSE
T
= MAX RATED
J
o
T
= 25 C
C
1
0.01
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
60
0.1
1
10
V
t , TIME IN AVALANCHE (ms)
DS
AV
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
80
80
PULSE DURATION = 80µs
V
= 5V
GS
DUTY CYCLE = 0.5% MAX
V
= 15V
DD
60
40
20
0
60
40
20
0
V
= 10V
GS
V
= 4V
GS
o
T
= 25 C
J
V
= 3V
GS
o
T
= 25 C
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
o
T
J
= 175 C
T
= -55 C
J
0
0.25
0.5
0.75
1.0
1.25
1.5
1.5
2.0
2.5
3.0
3.5
4.0
V
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
GS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
30
25
20
15
10
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
= 35A
D
1.6
1.4
1.2
1.0
0.8
0.6
I
= 1A
D
V
= 10V, I = 35A
D
GS
2
4
6
8
10
-80
-40
0
40
80
120
160
200
o
V
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
GS
J
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. 1.2
5
Typical Characteristics TC = 25°C unless otherwise noted
1.2
1.0
0.8
0.6
0.4
1.10
1.05
1.00
0.95
0.90
I
= 250µA
V
= V , I = 250µA
DS D
D
GS
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
2000
10
V
= 15V
DD
C
= C + C
GS GD
ISS
1000
8
6
4
2
0
C
C
+ C
OSS
DS GD
C
V
= C
GD
RSS
WAVEFORMS IN
DESCENDING ORDER:
100
50
I
I
= 35A
= 1A
D
D
= 0V, f = 1MHz
GS
0
5
10
Q , GATE CHARGE (nC)
15
20
0.1
1
10
30
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
g
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. 1.2
6
Test Circuits and Waveforms
V
DS
BV
DSS
t
P
L
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
V
DS
V
Q
DD
g(TOT)
V
GS
V
L
DS
V
= 10V
GS
Q
V
g(5)
GS
+
Q
gs2
V
V
= 5V
DD
GS
-
DUT
V
= 1V
GS
I
g(REF)
0
Q
g(TH)
Q
Q
gs
gd
I
g(REF)
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
V
DS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
R
t
t
f
L
r
V
DS
90%
90%
+
-
V
GS
V
DD
10%
10%
0
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
V
10%
GS
0
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. 1.2
7
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM, and the
125
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM, in an
R
= 33.32+ 23.84/(0.268+Area) EQ.2
= 33.32+ 154/(1.73+Area) EQ.3
θJA
R
application.
Therefore the application’s ambient
θJA
100
75
temperature, TA (oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
(T
– T )
JM
A
(EQ. 1)
P
= -----------------------------
50
DM
Rθ JA
In using surface mount devices such as the TO-252
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of PDM is
complex and influenced by many factors:
25
0.01
(0.0645)
0.1
(0.645)
1
10
(6.45)
(64.5)
2
2
AREA, TOP COPPER AREA in (cm )
Figure 21. Thermal Resistance vs Mounting
Pad Area
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
23.84
(0.268 + Area)
R
= 33.32 + ------------------------------------
(EQ. 2)
θ JA
θ JA
Area in Inches Squared
154
R
= 33.32 + ---------------------------------
(EQ. 3)
(1.73 + Area)
Area in Centimeters Squared
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. 1.2
8
PSPICE Electrical Model
.SUBCKT FDD8878 2 1 3 ; rev February 2004
Ca 12 8 8.6e-10
Cb 15 14 7.2e-10
Cin 6 8 8e-10
LDRAIN
DPLCAP
DRAIN
2
5
10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
RLDRAIN
RSLC1
51
DBREAK
+
RSLC2
5
ESLC
11
51
Ebreak 11 7 17 18 32.97
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
-
+
50
-
17
DBODY
RDRAIN
6
8
EBREAK 18
-
ESG
EVTHRES
+
16
21
+
-
19
8
MWEAK
Evtemp 20 6 18 22 1
LGATE
EVTEMP
RGATE
GATE
1
6
+
-
18
22
MMED
It 8 17 1
9
20
MSTRO
8
RLGATE
Lgate 1 9 5.4e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 2e-9
LSOURCE
CIN
SOURCE
3
7
RSOURCE
RLSOURCE
RLgate 1 9 54
RLdrain 2 5 10
RLsource 3 7 20
S1A
S2A
RBREAK
12
15
13
14
13
17
18
8
RVTEMP
19
-
S1B
S2B
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
13
CB
CA
IT
14
+
+
VBAT
6
8
5
8
EGS
EDS
+
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 6.9e-3
Rgate 9 20 3.1
-
-
8
22
RVTHRES
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 2.7e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*125),5))}
.MODEL DbodyMOD D (IS=2.6E-12 IKF=8 N=1.01 RS=6.4e-3 TRS1=8e-4 TRS2=2e-7
+ CJO=3.4e-10 M=0.53 TT=1e-17 XTI=2)
.MODEL DbreakMOD D (RS=1.4 TRS1=1e-3 TRS2=-5e-6)
.MODEL DplcapMOD D (CJO=3.4e-10 IS=1e-30 N=10 M=0.39)
.MODEL MmedMOD NMOS (VTO=1.75 KP=7 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.1 T_ABS=25)
.MODEL MstroMOD NMOS (VTO=2.2 KP=100 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25)
.MODEL MweakMOD NMOS (VTO=1.45 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=31 RS=0.1 T_ABS=25)
.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-8e-7)
.MODEL RdrainMOD RES (TC1=1e-4 TC2=7.5e-6)
.MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=1.3e-2 TC2=2e-6)
.MODEL RvthresMOD RES (TC1=-1.7e-3 TC2=-8e-6)
.MODEL RvtempMOD RES (TC1=-2.2e-3 TC2=2e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.5 VOFF=-3.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4.5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-1)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=-2)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. 1.2
9
SABER Electrical Model
rev February 2004
template FDD8878 n2,n1,n3 =m_temp
electrical n2,n1,n3
number m_temp=25
{
var i iscl
dp..model dbodymod = (isl=2.6e-12,ikf=8,nl=1.01,rs=6.4e-3,trs1=8e-4,trs2=2e-7,cjo=3.4e-10,m=0.53,tt=1e-17,xti=2)
dp..model dbreakmod = (rs=1.4,trs1=1e-3,trs2=-5e-6)
dp..model dplcapmod = (cjo=3.4e-10,isl=10e-30,nl=10,m=0.39)
m..model mmedmod = (type=_n,vto=1.75,kp=7,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=2.2,kp=100,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.45,kp=0.03,is=1e-30, tox=1,rs=0.1)
LDRAIN
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4.5,voff=-3.5)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-4.5)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-2,voff=-1)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-1,voff=-2)
c.ca n12 n8 = 8.6e-10
c.cb n15 n14 = 7.2e-10
c.cin n6 n8 = 8e-10
DPLCAP
DRAIN
2
5
10
RLDRAIN
RSLC1
51
RSLC2
ISCL
DBREAK
11
50
-
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
RDRAIN
6
8
ESG
DBODY
EVTHRES
+
16
21
+
-
19
8
MWEAK
LGATE
EVTEMP
spe.ebreak n11 n7 n17 n18 = 32.97
RGATE
GATE
1
6
+
-
18
22
EBREAK
+
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
MMED
9
20
MSTRO
8
17
18
-
RLGATE
LSOURCE
CIN
SOURCE
3
7
RSOURCE
RLSOURCE
i.it n8 n17 = 1
S1A
S2A
RBREAK
12
15
13
8
14
13
17
18
l.lgate n1 n9 = 5.4e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 2e-9
RVTEMP
19
S1B
S2B
13
CB
CA
IT
14
-
+
+
res.rlgate n1 n9 = 54
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 20
VBAT
6
8
5
8
EGS
EDS
+
-
-
8
22
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u, temp=m_temp
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u, temp=m_temp
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u, temp=m_temp
RVTHRES
res.rbreak n17 n18 = 1, tc1=8.3e-4,tc2=-8e-7
res.rdrain n50 n16 = 6.9e-3, tc1=1e-4,tc2=7.5e-6
res.rgate n9 n20 = 3.1
res.rslc1 n5 n51 = 1e-6, tc1=9e-4,tc2=1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 2.7e-3, tc1=1.3e-2,tc2=2e-6
res.rvthres n22 n8 = 1, tc1=-1.7e-3,tc2=-8e-6
res.rvtemp n18 n19 = 1, tc1=-2.2e-3,tc2=2e-7
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/125))** 5))
}
}
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©2008 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev.1.2
10
PSPICE Thermal Model
JUNCTION
th
REV 23 February 2004
FDD8878T
CTHERM1 TH 6 3.5e-4
CTHERM2 6 5 5e-4
CTHERM3 5 4 2.5e-3
CTHERM4 4 3 2.7e-3
CTHERM5 3 2 5e-3
CTHERM6 2 TL 1e-2
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
RTHERM1 TH 6 2.9e-1
RTHERM2 6 5 3.5e-1
RTHERM3 5 4 4.5e-1
RTHERM4 4 3 5.2e-1
RTHERM5 3 2 6.9e-1
RTHERM6 2 TL 7e-1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model FDD8878T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =3.5e-4
ctherm.ctherm2 6 5 =5e-4
ctherm.ctherm3 5 4 =2.5e-3
ctherm.ctherm4 4 3 =2.7e-3
ctherm.ctherm5 3 2 =5e-3
ctherm.ctherm6 2 tl =1e-2
4
3
2
rtherm.rtherm1 th 6 =2.9e-1
rtherm.rtherm2 6 5 =3.5e-1
rtherm.rtherm3 5 4 =4.5e-1
rtherm.rtherm4 4 3 =5.2e-1
rtherm.rtherm5 3 2 =6.9e-1
rtherm.rtherm6 2 tl =7e-1
}
tl
CASE
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©2008 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. 1.2
11
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