FDFM2N111 [ONSEMI]
20V集成式P沟道PowerTrench® MOSFET和肖特基二极管;
| 型号： | FDFM2N111 |
| 厂家： | 
ONSEMI |
| 描述： | 20V集成式P沟道PowerTrench® MOSFET和肖特基二极管 开关 晶体管 肖特基二极管 |
| 文件： | 总8页 (文件大小：382K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
August 2005
FDFM2N111
®
Integrated N-Channel PowerTrench MOSFET and Schottky Diode
General Description
Applications
FDFM2N111 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
Standard Buck Converter
Features
This device is designed specifically as a single package
solution for Standard Buck Converter. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance.
4 A, 20 V
RDS(ON) = 100mΩ @ VGS = 4.5 V
RDS(ON) = 150mΩ @ VGS = 2.5 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
PIN 1
A
S/C
G
1
2
3
6
5
4
A
A
S/C
G
C
D
S/C
D
D
A
S/C
TOP
BOTTOM
MLP 3x3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
Parameter
Ratings
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
20
±12
(Note 1a)
4
ID
A
10
VRRM
IO
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
20
V
A
(Note 1a)
2
1.7
Power dissipation (Steady State)
Power dissipation (Steady State)
(Note 1a)
(Note 1b)
PD
W
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
oC
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
70
oC/W
oC/W
Thermal Resistance, Junction-to-Ambient
150
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
3000 units
2N111
FDFM2N111
7inch
12mm
©2005 Fairchild Semiconductor Corporation
1
FDFM2N111 Rev. C2 (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ID = 250µA, VGS = 0V
20
-
-
-
-
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA,
Referenced to 25°C
12
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Body Leakage,
VGS = 0V, VDS = 16V
-
-
-
-
1
µA
VGS = ±12V, VDS = 0V
±100
nA
On Characteristics (Note 2)
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
0.6
-
1.0
-3
1.5
-
V
∆VGS(TH)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250µA,
Referenced to 25°C
mV/°C
ID = 4.0A, VGS = 4.5V
ID = 3.3A, VGS = 2.5V
-
-
54
83
100
150
RDS(ON)
Static Drain-Source On-Resistance
mΩ
ID = 4.0A, VGS = 4.5V,
TJ = 125°C
-
74
147
ID(ON)
gFS
On-State Drain Current
VGS = 2.5V, VDS = 5V
ID = 4A, VDS = 5V
10
-
-
-
-
A
S
Forward Transconductance
9.7
Dynamic Characteristics
CISS
COSS
CRSS
RG
Input Capacitance
-
-
-
-
273
63
-
-
-
-
pF
pF
pF
Ω
VDS = 10V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
37
VGS = 0V, f = 1MHz,
1.6
Switching Characteristics (Note 2)
td(ON)
tr
td(OFF)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
-
-
6
12
14
20
3.4
3.8
-
ns
ns
7
VDD = 10V, ID = 1A
VGS = 4.5V, RGEN = 6Ω
11
1.7
2.7
0.6
0.9
ns
ns
Qg
nC
nC
nC
VDS = 10V, ID = 4.0A,
VGS = 4.5V
Qgs
Qgd
-
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-
-
-
-
-
1.4
A
V
VSD
trr
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
VGS = 0V, IS = 1.4 A (Note 2)
0.8
11
3
-1.2
-
-
ns
nC
IF= 4.0A, dIF/dt=100A/µs
Qrr
Diode Reverse Recovery Charge
Schottky Diode Characteristic
VR
Reverse Voltage
Reverse Leakage
Forward Voltage
IR = 1mA
20
-
-
-
-
V
µA
mA
V
TJ = 25°C
VR = 5V
100
10
IR
TJ = 100°C
VF
IF = 1A
TJ = 25°C
-
0.32
0.39
2
FDFM2N111 Rev. C2 (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. RθCA is guaranteed by design while RθCA is determined by the
user's board design.
a) 70oC/W when mounted on
a 1in2 pad of 2 oz copper
b) 150oC/W whe mounted on
a minimum pad of 2 oz
copper
Scale 1: 1 on letter size paper
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
3
FDFM2N111 Rev. C2 (W)
Typical Characteristics
10
2
1.8
1.6
1.4
1.2
1
VGS = 4.5V
3.0V
3.5V
8
2.5V
VGS = 2.5V
6
4
2
0
3.0V
2.0V
3.5V
4.0V
4.5V
0.8
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.2
1.6
1.4
1.2
1
ID = 4A
GS = 4.5V
ID = 2A
0.18
0.16
0.14
0.12
0.1
V
TA = 125oC
0.08
0.06
0.04
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
1.5
2
2.5
3
3.5
4
4.5
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
10
8
100
VDS = 5V
TA = -55oC
VGS = 0V
25oC
125oC
10
1
TA = 125oC
6
25oC
0.1
-55oC
4
0.01
0.001
0.0001
2
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
-VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
4
FDFM2N111 Rev. C2 (W)
Typical Characteristics
6
400
350
300
250
200
150
100
50
f = 1MHz
VGS = 0 V
ID = 4A
VDS = 5V
10V
5
4
3
2
1
0
C
iss
15V
Coss
Crss
0
0
4
8
12
16
20
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
10
0.1
TJ = 125oC
TJ = 125oC
0.01
1
TJ = 100oC
0.001
TJ = 25oC
0.1
0.0001
0.00001
0.01
TJ = 25oC
0.000001
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
10
15
20
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage
Figure 10. Schottky Diode Reverse Current
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
5
FDFM2N111 Rev. C2(W)
(0.23)
(1.09)
0.05 C
3.0
A
(1.35)
(1.65)
6
4
B
(2.80)
3.0
(0.64)
(0.82)
0.05 C
1
(0.70)
3
PIN #1 IDENT
(0.65)
0.95 TYP
TOP VIEW
0.80
MAX
RECOMMENDED LAND PATTERN
0.10 C
0.08 C
(0.20)
C
NOTES: UNLESS OTHERWISE SPECIFIED
A) CONFORMS TO JEDEC REGISTRATION,
MO-229, VARIATION WEEA
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) DRAWING FILE NAME: MKT-MLP06HREV2
0.05
0.00
SIDE VIEW
SEATING
PLANE
2.5 MAX.
0.41±0.05
1.17±0.05
0.82±0.05
0.79±0.05
0.61±0.05
0.45
0.20
3
1
PIN #1 IDENT
1.7 MAX.
0.10
0.05
C A B
C
0.2 MIN
4
6
0.45
0.30
0.95
1.90
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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