FDG6332C-F085 [ONSEMI]
20V N 和 P 沟道 PowerTrench® MOSFET;
| 型号： | FDG6332C-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 20V N 和 P 沟道 PowerTrench® MOSFET |
| 文件： | 总9页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FDG6332C-F085
20V N & P-Channel PowerTrenchÒ
MOSFETs
General Description
Features
The N & P-Channel MOSFETs are produced using
·
·
Q1 0.7 A, 20V.
Q2 –0.6 A, –20V.
Low gate charge
RDS(ON) = 300 mW @ VGS = 4.5 V
DS(ON) = 400 mW @ VGS = 2.5 V
ON
Semiconductor’s
advanced
PowerTrench
R
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
RDS(ON) = 420 mW @ VGS = –4.5 V
DS(ON) = 630 mW @ VGS = –2.5 V
R
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
·
·
High performance trench technology for extremely
low RDS(ON)
Applications
·
·
·
DC/DC converter
Load switch
·
SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
LCD display inverter
·
·
Qualified to AEC Q101
RoHS Compliant
S
G
D
1
2
3
6
5
4
D
G
Pin 1
S
SC70-6
Complementary
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Q1
20
Q2
Units
–20
±12
–0.6
–2
V
V
A
VGSS
Gate-Source Voltage
±12
0.7
2.1
ID
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
Power Dissipation for Single Operation
0.3
W
PD
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
°C/W
RqJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
3000 units
.32
FDG6332C-F085
7’’
8mm
Publication Order Number:
FDG6332C-F085/D
Ó2009 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
VGS = 0 V,
GS = 0 V,
ID = 250 mA
ID = –250 mA
Q1
Q2
20
–20
V
BVDSS
Drain–Source Breakdown Voltage
V
Breakdown Voltage Temperature
Coefficient
Q1
Q2
Q1
Q2
14
–14
DBVDSS
DTJ
ID = 250 mA,Ref. to 25°C
ID = –250 mA,Ref. to 25°C
mV/°C
mA
VDS
VDS = –16 V, VGS = 0 V
GS = ± 12 V, VDS = 0 V
=
16 V, VGS = 0 V
1
–1
±100
±100
IDSS
Zero Gate Voltage Drain Current
IGSSF /IGSSR Gate–Body Leakage, Forward
IGSSF /IGSSR Gate–Body Leakage, Reverse
nA
nA
V
VGS = ± 12V , VDS = 0 V
On Characteristics
(Note 2)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
VGS(th)
Gate Threshold Voltage
0.6
1.1
1.5
V
Q1
Q2
-0.6
–1.2
–1.5
Gate Threshold Voltage
Temperature Coefficient
Q1
Q2
–2.8
3
DVGS(th)
DTJ
ID = 250 mA,Ref. To 25°C
ID = –250 mA,Ref. to 25°C
mV/°C
mW
VGS = 4.5 V, ID =0.7 A
180
293
247
300
400
442
RDS(on)
Static Drain–Source
On–Resistance
Q1
VGS = 2.5 V, ID =0.6 A
VGS = 4.5 V, ID =0.7A,TJ=125°C
V
GS = –4.5 V, ID = –0.6 A
300
470
400
420
630
700
Q2
VGS = –2.5 V, ID = –0.5 A
VGS=–4.5 V, ID =–0.6 A,TJ=125°C
V
DS = 5 V
ID = 0.7 A
2.8
1.8
gFS
Forward Transconductance
On–State Drain Current
S
A
Q1
Q2
Q1
Q2
VDS = –5 V
ID = –0.6A
VGS = 4.5 V, VDS = 5 V
VGS = –4.5 V, VDS = –5 V
ID(on)
1
–2
Dynamic Characteristics
VDS=10 V, V GS= 0 V, f=1.0MHz
VDS=–10 V, V GS= 0 V, f=1.0MHz
113
114
34
24
16
9
Ciss
Coss
Crss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
pF
pF
pF
VDS=10 V, V GS= 0 V, f=1.0MHz
Output Capacitance
VDS=–10 V, V GS= 0 V, f=1.0MHz
V
DS=10 V, V GS= 0 V, f=1.0MHz
DS=–10 V, V GS= 0 V, f=1.0MHz
Reverse Transfer Capacitance
V
Switching Characteristics (Note 2)
5
5.5
7
10
11
15
25
18
12
3
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
ns
ns
For Q1:
DS =10 V,
VGS= 4.5 V, RGEN = 6 W
V
I D= 1 A
14
9
For Q2:
V
DS =–10 V, I D= –1 A
ns
VGS= –4.5 V, RGEN = 6 W
6
1.5
1.7
1.1
1.4
0.24
0.3
0.3
0.4
ns
3.4
1.5
2
Qg
Qgs
Qgd
nC
nC
nC
For Q1:
VDS =10 V,
GS= 4.5 V, RGEN = 6 W
For Q2:
I D= 0.7 A
V
V
DS =–10 V, I D= –0.6 A
VGS= –4.5 V, RGEN = 6 W
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2
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
0.25
–0.25
1.2
IS
Maximum Continuous Drain–Source Diode Forward Current
Q1
Q2
A
V
VGS = 0 V, IS = 0.25 A
(Note 2)
0.74
VSD
Drain–Source Diode Forward
Voltage
Q1
Q2
VGS = 0 V, IS = –0.25 A (Note 2)
–0.77 –1.2
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqJA is determined by the user's board design. RqJA = 415°C/W when mounted on a minimum pad of FR-4
PCB in a still air environment.
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
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3
Typical Characteristics: N-Channel
1.8
1.6
1.4
1.2
1
4
VGS=4.5V
3.0V
3.5V
2.5V
3
2
1
0
VGS = 2.5V
3.0V
3.5V
2.0V
4.0V
4.5V
0.8
0
1
2
3
4
0
1
2
3
4
150
3
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
1.6
1.4
1.2
1
ID =0.7A
ID =0.4A
V
GS = 4.5V
0.6
0.4
0.2
0
TA = 125oC
TA = 25oC
0.8
0.6
1
2
3
4
5
-50
-25
0
25
50
75
100
125
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
2.5
TA = -55oC
VGS = 0V
25oC
125oC
VDS = 5V
1
0.1
2
1.5
1
TA = 125oC
25oC
-55oC
0.01
0.001
0.0001
0.5
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
V
GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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4
Typical Characteristics: N-Channel
200
150
100
50
5
VDS = 5V
f = 1MHz
GS = 0 V
ID = 0.7A
10V
V
4
15V
CISS
3
2
1
0
COSS
CRSS
0
0
5
10
15
20
0
0.4
0.8
1.2
1.6
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
1
10
8
SINGLE PULSE
R
qJA = 415°C/W
A = 25°C
RDS(ON) LIMIT
100ms
1ms
T
10ms
6
100ms
1s
4
VGS = 4.5V
DC
0.1
0.01
SINGLE PULSE
R
qJA = 415oC/W
TA = 25oC
2
0
0.001
0.01
0.1
1
10
100
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
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5
Typical Characteristics: P-Channel
2
1.8
1.6
1.4
1.2
1
VGS = -4.5V
-3.0V
VGS = -2.5V
-3.5V
1.6
-2.5V
1.2
0.8
-3.0V
-3.5V
-4.0V
1.5
-2.0V
-4.5V
0.4
0.8
0
0
1
2
3
4
0
0.5
1
2
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.2
ID = -0.6A
GS = -4.5V
ID = -0.3 A
1.3
1.2
1.1
1
V
1
0.8
0.6
0.4
0.2
TA = 125oC
0.9
0.8
0.7
TA = 25oC
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
10
2
TA = -55oC
25oC
125oC
VGS = 0V
VDS = -5V
1
1.5
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.5
0
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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6
Typical Characteristics: P-Channel
160
120
80
5
f = 1MHz
VGS = 0 V
ID = -0.6A
VDS = -5V
-10V
4
3
2
1
0
-15V
CISS
COSS
40
CRSS
0
0
5
10
15
20
0
0.3
0.6
0.9
1.2
1.5
1.8
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
10
10
SINGLE PULSE
R
qJA = 415oC/W
TA = 25oC
8
6
4
2
100ms
RDS(ON) LIMIT
1ms
1
0.1
10ms
100ms
1s
VGS = -4.5V
DC
SINGLE PULSE
R
qJA = 415oC/W
TA = 25oC
0.01
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
Rq (t) = r(t) * Rq
JA
JA
R
qJA = 415 °C/W
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
t1
t2
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
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