FDMA008P20LZ [ONSEMI]
单 P 沟道 PowerTrench® MOSFET -20V，-2.5A，13mΩ;
| 型号： | FDMA008P20LZ |
| 厂家： | 
ONSEMI |
| 描述： | 单 P 沟道 PowerTrench® MOSFET -20V，-2.5A，13mΩ |
| 文件： | 总7页 (文件大小：411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
P-Channel, POWERTRENCH)
−20 V, −11 A, 13 mW
FDMA008P20LZ
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications. It
features a MOSFET with low on−state resistance and zener diode
protection against ESD.
www.onsemi.com
Bottom Drain Contact
The WDFN6 (MicroFET 2.05×2.05) package offers exceptional
thermal performance for its physical size and is well suited to linear
mode applications.
1
6
D
D
G
D
D
S
2
3
5
4
Features
• Max r
• Max r
• Max r
• Max r
= 13 mW at V = −4.5 V, I = −2.5 A
GS D
DS(on)
DS(on)
DS(on)
DS(on)
= 16 mW at V = −2.5 V, I = −1.4 A
GS
D
= 20 mW at V = −1.8 V, I = −1.0 A
GS
D
= 30 mW at V = −1.5 V, I = −0.85 A
GS
D
D
D
• Low Profile − 0.8 mm Maximum − in the New Package WDFN6
S
Pin 1
(MicroFET 2.05 × 2.05 mm)
Drain
• HBM ESD Protection Level > 1 kV Typical (Note 3)
• Free from Halogenated Compounds and Antimony Oxides
• RoHS Compliant
Source
D
D
G
(Bottom View)
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
WDFN6 2.05x2.05, 0.65P
CASE 483AV
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
−20
8
Unit
V
V
DS
V
GS
MARKING DIAGRAM
V
I
Drain Current
Continuous (Note 1a)
Pulsed (Note 5)
Single Pulse Avalanche Energy (Note 4)
−11
−164
54
A
D
&2&K
&Z008
E
AS
mJ
W
P
Power
Dissipation
(Note 1a)
(Note 1b)
2.4
D
0.9
&2 = Date Code
&K = Lot Code
&Z = Assembly Plant Code
008 = Specific Device Code
T , T
Operating and Storage Junction
Temperature Range
−55 to
+150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
THERMAL CHARACTERITICS
Device
Marking
Symbol
Parameter
Ratings
52
Unit
{
Device
Package
Shipping
R
Thermal Resistance,
Junction to Ambient
(Note 1a)
(Note 1b)
°C/W
q
JA
008
FDMA008P20LZ
WDFN6
3000 Units/
Tape & Reel
(Pb−Free)
145
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
December, 2020 − Rev. 2
FDMA008P20LZ/D
FDMA008P20LZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−20
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= −250 mA,
−16
mV/°C
DSS
D
referenced to 25°C
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −16 V, V = 0 V
−1
1
mA
mA
DS
GS
I
= 8 V, V = 0 V
DS
GS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−0.4
−0.65
3
−1.4
V
GS(th)
GS
DS
D
DV
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA,
mV/°C
GS(th)
D
referenced to 25°C
DT
J
V
GS
V
GS
V
GS
V
GS
V
GS
= −4.5 V, I = −2.5 A
10
12
13
16
20
30
r
Static Drain to Source On Resistance
mW
D
DS(on)
= −2.5 V, I = −1.4 A
D
= −1.8 V, I = −1.0 A
15
D
= −1.5 V, I = −0.85 A
20
D
= −4.5 V, I = −2.5 A,
12.8
D
T = 125°C
J
g
FS
Forward Transconductance
V
DS
= −5 V, I = −2.5 A
26
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
3131
424
386
13
4383
594
540
25
V
= −10 V, V = 0 V,
pF
iss
DS
GS
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
W
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
12
17
21
30
V
DD
V
GS
= −10 V, I = −2.5 A,
ns
d(on)
D
= −4.5 V, R
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
239
96
382
153
39
d(off)
t
f
Q
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
28
V
= −4.5 V, V = −10 V, I
D
nC
g
GS
DD
= −2.5 A
Q
3.6
6.2
gs
gd
Q
DRAIN−SOURCE DIODE CHARACTERISTICS
V
V
= 0 V, I = −2 A (Note 2)
−0.6
−0.8
28
−1.2
−1.3
46
V
V
V
Source to Drain Diode Forward Voltage
GS
S
SD
= 0 V, I = −2.5 A (Note 2)
GS
S
t
Reverse Recovery Time
ns
nC
I = −6.8 A,
rr
F
di/dt = 100 A/mS
Q
Reverse Recovery Charge
10
17
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins.
a. 52 °C/W when mounted on
b. 145 °C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.
4. E of 54 mJ is based on starting T = 25°C, L = 3 mH, I = 6 A, V = 20 V, V = 4.5 V. 100% test at L = 0.1 mH, I = 19 A.
AS
J
AS
DD
GS
AS
5. Pulsed Id please refer to Figure 10. SOA curve for more details.
www.onsemi.com
2
FDMA008P20LZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
140
105
70
35
0
4
VGS = −4.5 V
GS = −3.5 V
VGS = −1.5 V
V
VGS = −1.8 V
V
GS = −3 V
3
2
1
0
VGS = −2 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = −2.5 V
VGS = −2.5 V
V
GS = −3 V
VGS = −2 V
VGS = −1.8 V
VGS = −1.5 V
VGS = −4.5 V
VGS = −3.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
0
35
70
105
140
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
80
1.4
1.3
1.2
1.1
1.0
0.9
0.8
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID = −2.5 A
70
60
50
40
30
20
10
0
VGS = −4.5 V
ID = −2.5 A
TJ = 125 o
C
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
0
1
2
3
4
T , JUNCTION TEMPERATURE (5C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On−Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
140
120
100
80
100
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
10
1
VDS = −5 V
TJ = −55oC
TJ = 150 o
C
T
J = 25 o
C
TJ = 25 oC
TJ = −55oC
60
0.1
TJ = 150 o
C
40
0.01
20
0
0.001
0
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
www.onsemi.com
3
FDMA008P20LZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10000
4.5
3.0
1.5
0.0
ID = −2.5 A
V
DD = −8 V
Ciss
VDD = −10 V
1000
100
Coss
Crss
VDD = −12 V
f = 1 MHz
VGS = 0 V
0.1
1
10
20
0
5
10
15
20
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to
Source Voltage
100
10
1
200
100
100 ms
10
1
TJ = 25oC
1 ms
10 ms
THIS AREA IS
LIMITED BY r DS(on)
TJ = 100 o
C
100 ms
SINGLE PULSE
1 s
10 s
DC
0.1
0.01
TJ = 125 o
C
T
= MAX RATED
J
R
T
= 1455C/W
q
JA
CURVE BENT TO
MEASURED DATA
= 255C
A
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
80
t
, TIME IN AVALANCHE (ms)
AV
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Forward Bias Safe Operating Area
100000
10000
1000
100
SINGLE PULSE
R
= 1455C/W
q
JA
T
A
= 255C
10
1
0.1
10−6
10−5
10−4
10−3
10−2
t, PULSE WIDTH (s)
10−1
11
0
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
www.onsemi.com
4
FDMA008P20LZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
0.001
NOTES:
(t) = r(t) x R
Z
qJA
qJA
o
SINGLE PULSE
0.0001
R
= 145 C/W
qJA
Peak T = P
x Z (t) + T
J
DM
qJA A
Duty Cycle, D = t / t
1
2
0.00001
10−6
10−5
10−4
10−3
t, RECTANGULAR PULSE DURATION (s)
10−2
10−1
11
0
100
1000
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2.05X2.05, 0.65P
CASE 483AV
ISSUE A
DATE 02 APR 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13671G
WDFN6 2.05X2.05, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDMA0104
20V Single N-Channel 1.5 V Specified PowerTrench® MOSFET, 6LD,MLP,DUAL,NON-JEDEC,2MM SQUARE,SINGLE TIED DAP, 3000/TAPE REEL
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明