FDMA1024NZ [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，20V，5.0A，54mΩ;
| 型号： | FDMA1024NZ |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，20V，5.0A，54mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual N-Channel,
POWERTRENCH)
Pin 1
S1 G1 D2
D1
D2
20 V, 5.0 A, 54 m
ꢀ
FDMA1024NZ
D1 G2 S2
WDFN6 2x2, 0.65P
(MicroFETt 2x2)
CASE 511DA
General Description
This is designed specifically as a single package solution for dual
switching requirements in cellular handset and other ultra−portable
applications. It features two independent N−Channel MOSFETs with
low on−state resistance for minimum conduction losses.
The MicroFET t 2x2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
MARKING DIAGRAM
&Z&2&K
024
Features
• Max r
• Max r
• Max r
• Max r
= 54 mW at V = 4.5 V, I = 5.0 A
GS D
DS(on)
DS(on)
DS(on)
DS(on)
= 66 mW at V = 2.5 V, I = 4.2 A
GS
D
&Z
&2
&K
024
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= 82 mW at V = 1.8 V, I = 2.3 A
GS
D
= 114 mW at V = 1.5 V, I = 2.0 A
GS
D
= Specific Device Code
• HBM ESD Protection Level = 1.6 kV (Note 3)
• Low Profile − 0.8 mm Maximum in the New Package MicroFETt
2 x 2 mm
PIN ASSIGNMENT
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free and is RoHS Compliant
S1
1
6
5
4
D1
G2
Applications
2
3
• Baseband Switch
• Loadswitch
• DC−DC Buck Converters
G1
D2
S2
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Ratings Unit
V
DS
V
GS
20
8
V
V
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
Gate to Source Voltage
Drain Current − Continuous (Note 1a)
− Pulsed
I
D
5.0
6.0
1.4
0.7
P
D
Power Dissipation (Note 1a)
Power Dissipation (Note 1b)
W
T
STG
Operating and Storage Junction Temperature
Range
−55 to
+150
°C
J,
T
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2023 − Rev. 3
FDMA1024NZ/D
FDMA1024NZ
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
R
R
R
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
Thermal Resistance, Junction to Ambient (Note 1c)
Thermal Resistance, Junction to Ambient (Note 1d)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
°C/W
q
q
q
q
JA
JA
JA
JA
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
Shipping
024
FDMA1024NZ
WDFN6 2x2, 0.65P (MicroFET 2x2)
3000 Units / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
20
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
19
DBVDSS
DTJ
D
mV/°C
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 16 V, V = 0 V
1
mA
mA
DSS
DS
GS
I
=
8 V, V = 0 V
10
GSS
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
0.4
0.7
1.0
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−3
DVGS(th)
DTJ
D
mV/°C
mW
r
Static Drain to Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
DD
= 4.5 V, I = 5.0 A
37
43
52
67
51
16
54
66
DS(on)
D
= 2.5 V, I = 4.2 A
D
= 1.8 V, I = 2.3 A
82
D
= 1.5 V, I = 2.0 A
114
75
D
= 4.5 V, I = 5.0 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 5.0 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 10 V, V = 0 V, f = 1 MHz
375
70
500
95
pF
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
40
65
rss
R
f = 1 MHz
4.3
W
G
SWITCHING CHARACTERISTICS
td
Turn*On Delay Time
Rise Time
V
V
= 10 V, I = 5.0 A,
5.3
2.2
18
11
10
33
10
7.3
ns
(on)
DD
GS
D
= 4.5 V, R
= 6 W
GEN
t
r
t
Turn*Off Delay Time
Fall Time
D(off)
t
f
2.3
5.2
0.6
0.9
Q
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
= 4.5 V, V = 10 V,
nC
g
GS
DD
i
= 5.0 A
D
Q
Q
gs
gd
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2
FDMA1024NZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Maximum Continuous Source−Drain Diode Forward Current
Parameter
Test Condition
Min
Typ
Max
Unit
I
S
1.1
1.2
35
A
V
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 1.1 A (Note 2)
0.7
19
5
SD
GS
S
t
I = 5.0 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
10
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
JA
2
(a) R
(b) R
(c) R
= 86 °C/W when mounted on a 1 in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. For single operation.
q
JA
JA
JA
= 173 °C/W when mounted on a a minimum pad of 2 oz copper. For single operation.
q
2
= 69 °C/W when mounted on a 1 in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. For dual operation.
q
(d) R
= 151 °C/W when mounted on a a minimum pad of 2 oz copper. For dual operation.
q
JA
a) 86°C/W when mounted on
b) 173°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
c) 69°C/W when mounted on
d) 151°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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3
FDMA1024NZ
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
3.0
6
5
4
3
2
1
0
PULSE DURATION = 80ꢁs
DUTY CYCLE = 0.5% MAX
V
GS = 1.5 V
2.5
2.0
1.5
1.0
0.5
4.5 V
3.5 V
2.5 V
VGS
VGS
VGS
=
=
=
VGS = 1.5 V
VGS = 1.8 V
3.5 V
=
VGS
V
GS = 1.8 V
2.5 V
4.5 V
VGS
=
=
PULSE DURATION = 80ꢁ s
DUTY CYCLE = 0.5% MAX
VGS
0.0
0.2
0.4
0.6
0.8
1.0
1
2
3
4
5
6
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance
vs Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
200
160
120
80
I
D = 5 A
PULSE DURATION = 80ꢁ s
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
ID = 2.5 A
TJ = 125oC
TJ = 25oC
40
0
1.0
−75 −50 −25
0
25 50 75 100 125 150
1.5
V , GATE TO SOURCE VOLTAGE (V)
GS
2.0
2.5
3.0
3.5
4.0
4.5
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs Gate to
vs Junction Temperature
Source Voltage
10
6
5
4
3
2
1
0
PULSE DURATION = 80 ꢁs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
1
0.1
TJ = 125oC
T
J = 25 o
C
TJ = 125 o
C
TJ = 25 o
C
0.01
0.001
TJ = −55 o
C
TJ = −55 oC
0.0
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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4
FDMA1024NZ
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
1000
100
5
4
3
2
1
0
ID = 5 A
Ciss
V
DD = 10 V
VDD = 8 V
Coss
V
DD = 12 V
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
20
0
1
2
3
4
5
6
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
10−2
10−3
10−4
10−5
10−6
10
1
VGS = 0 V
100 us
1 ms
10 ms
100 ms
TJ = 125 o
C
THIS AREA IS
LIMITED BY r
DS(on)
0.1
0.01
1 s
10 s
DC
SINGLE PULSE
= MAX RATED
TJ = 25 o
C
TJ
ꢂJA = 173oC/W
TA = 25 oC
10−7
10−8
R
0.1
1
10
60
0
3
6
9
12
15
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs.
Gate to Source Voltage
Figure 10. Forward Bias Safe
Operating Area
100
10
VGS = 4.5 V
SINGLE PULSE
R
ꢂJA = 173 oC/W
TA = 25 o
C
1
0.3
10−3
10−2
10−1
1
10
100
1000
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDMA1024NZ
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
ꢂJA = 173 oC/W
1
2
PEAK T = P x Z
x R
+ T
qJA A
R
J
DM
qJA
0.01
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 12. Junction to Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
MicroFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511DA
ISSUE O
DATE 31 JUL 2016
0.05
C
2.0
A
2X
B
1.80
1.72
2.0
0.80(2X)
1.00(2X)
0.21
1.41
0.05
C
2.25
TOP VIEW
2X
0.42(6X)
PIN#1 IDENT
0.42(6X)
(0.10)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN
0.10
C
0.20 0.05
C
0.08
C
0.025 0.025
SEATING
PLANE
SIDE VIEW
NOTES:
A. CONFORM TO JADEC REGISTRATIONS MO−229,
VARIATION VCCC, EXCEPT WHERE NOTED.
2.00 0.05
1.64 0.05
B. DIMENSIONS ARE IN MILLIMETERS.
0.645 0.05
0.350
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
PIN#1 IDENT
(0.185)4X
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
3
0.275 0.05
(6X)
F. NON−JEDEC DUAL DAP
0.86 0.05
2.00 0.05
(0.57)
F
6
4
0.33 0.05
(6X)
0.65
0.10
0.05
C A B
1.30
C
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13615G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
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