FDMA6023PZT [ONSEMI]
双 P 沟道，Power Trench® MOSFET，-20V，-3.6A，60mΩ;
| 型号： | FDMA6023PZT |
| 厂家： | 
ONSEMI |
| 描述： | 双 P 沟道，Power Trench® MOSFET，-20V，-3.6A，60mΩ 开关 晶体管 |
| 文件： | 总8页 (文件大小：510K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDMA6023PZT
Dual P-Channel PowerTrench® MOSFET
-20 V, -3.6 A, 60 mΩ
Features
General Description
Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A
Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A
Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A
Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultraportable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
Low Profile-0.55 mm maximum - in the new
package MicroFET 2x2 mm Thin
HBM ESD protection level > 2.4 kV typical (Note 3)
The MicroFET 2X2 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
RoHS Compliant
Applications
Battery protection
Free from halogenated compounds and antimony oxides
Battery management
Load switch
Pin 1
S1 G1 D2
Q1
6
D1
G2
S2
S1
1
2
3
D1
D2
5
4
G1
D2
D1 G2 S2
Q2
MicroFET 2x2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
-20
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±8
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
TA = 25 °C
(Note 1a)
-3.6
ID
A
-15
TA = 25 °C
TA = 25 °C
(Note 1a)
(Note 1b)
1.4
PD
W
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
RθJA
RθJA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
69
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
°C/W
151
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8mm
Quantity
623
FDMA6023PZT
MicroFET 2X2 Thin
7 ’’
3000 units
Publication Order Number:
FDMA6023PZT/D
©2009 Semiconductor Components Industries, LLC.
October-2017,Rev.2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 µA, VGS = 0 V
-20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = -250 µA, referenced to 25 °C
-12
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 µA
-0.4
-0.5
-2.7
-1.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 µA, referenced to 25 °C
mV/°C
V
GS = -4.5 V, ID = -3.6 A
40
49
60
70
60
80
VGS = -2.5 V, ID = -3.0 A
VGS = -1.8 V, ID = -2.0 A
VGS = -1.5 V, ID = -1.0 A
110
170
rDS(on)
Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = -4.5 V, ID = -3.6 A,
TJ = 125 °C
58
15
72
gFS
VDD = -5 V, ID = -3.6 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
665
115
100
885
155
150
pF
pF
pF
VDS = -10 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
13
11
23
20
ns
ns
VDD = -10 V, ID = -3.6 A,
V
GS = -4.5 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
75
47
12
1.4
5.2
120
75
ns
ns
Qg
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to -4.5 V
17
nC
nC
nC
VDD = -10 V,
D = -3.6 A
Qgs
Qgd
I
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
-1.1
-1.2
53
A
V
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = -1.1 A (Note 2)
-0.7
33
ns
nC
IF = -3.6 A, di/dt = 100 A/µs
Qrr
Reverse Recovery Charge
15
27
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2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Notes:
2
1. R
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by the
θJA
θJA
θJC
user's board design.
(a) R = 86 °C/W when mounted on a 1 in pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
2
θJA
(b) R
(c) R
(d) R
= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
θJA
θJA
θJA
2
= 69 °C/Wwhen mounted on a 1 in pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation.
= 151 °C/W when mounted on a minimum pad of 2 oz copper. For dual operation.
o
o
o
d)151 C/W
o
b)173 C/W
c) 69 C/W when
mounted on
a) 86 C/W when
mounted on
when mounted
when mounted
on a minimum
pad of
copper.
a
a
2
on
a minimum
pad of
copper.
2
1in pad of 2 oz
copper.
1in pad of 2 oz
copper.
2 oz
2 oz
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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3
Typical Characteristics TJ = 25 °C unless otherwise noted
15
3.0
2.5
2.0
1.5
1.0
0.5
VGS = -4.5V
VGS = -3.0V
VGS = -2.5V
VGS = -2.0V
VGS = -1.8V
PULSE DURATION = 300
µs
DUTY CYCLE = 2.0% MAX
12
9
VGS = -1.5V
VGS = -2.0V
VGS = -1.8V
VGS = -1.5V
6
3
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
VGS = -4.5V
12
VGS = -3.0V
9
VGS = -2.5V
3
0
0.0
0.5
-VDS
1.0
1.5
2.0
0
6
15
,
DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
200
1.6
ID = -3.6A
GS = -4.5V
PULSE DURATION = 300
DUTY CYCLE = 2.0% MAX
µs
ID = -3.6A
V
160
120
80
40
0
1.4
1.2
1.0
0.8
0.6
TJ = 125oC
TJ = 25oC
2.0
1.0
1.5
-VGS
2.5
3.0
3.5
4.0
4.5
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
,
GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
10
15
12
9
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
VGS = 0V
1
0.1
VDS = -5V
TJ = 125oC
TJ = 25oC
TJ = -55oC
6
TJ = 125oC
TJ = 25oC
0.01
3
TJ = -55oC
1.5
0.001
0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.5
1.0
2.0
2.5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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4
Typical Characteristics TJ = 25 °C unless otherwise noted
2000
1000
4.5
ID = -3.6A
Ciss
VDD = -5V
3.0
VDD = -10V
Coss
VDD = -15V
1.5
Crss
100
50
f = 1MHz
= 0V
V
GS
0.0
0.1
1
10
20
0
4
8
12
16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
20
100
10
VGS = -4.5 V
10
SINGLE PULSE
RθJA = 173 oC/W
1
1 ms
T
A = 25 oC
THIS AREA IS
LIMITED BY r
10 ms
DS(on)
100 ms
0.1
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 173 oC/W
1 s
10 s
DC
1
T
A = 25 oC
0.5
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
1
10
0.1
1
10
50
100 1000
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operation Area
Figure 10. Single Pulse Maximum
Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
RθJA = 173 oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
0.01
PEAK T = P
x Z
x R
+ T
θJA A
J
DM
θJA
0.005
10-4
10-3
10-2
10-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
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5
Dimensional Outline and Pad Layout
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6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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