FDMA86151L [ONSEMI]
N 沟道，PowerTrench® MOSFET，100V，3.3A，88mΩ;
| 型号： | FDMA86151L |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，100V，3.3A，88mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：440K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Single, N-Channel,
POWERTRENCH)
100 V, 3.3 A, 88 mW
FDMA86151L
General Description
This device has been designed to provide maximum efficiency and
thermal performance for synchronous buck converters. The low
WDFN6 2x2, 0.65P
CASE 511DB
R
DS(on)
and gate charge provide excellent switching performance.
Features
• Max R
• Max R
Bottom Drain Contact
= 88 mW @ V = 10 V, I = 3.3 A
DS(on)
DS(on)
GS
D
D
D
S
D
D
= 132 mW @ V = 4.5 V, I = 2.7 A
GS
D
• Low Profile − 0.8 mm Maximum in the New Package
MicroFET 2x2 mm
• Free from Halogenated Compounds and Antimony Oxides
• RoHS Compliant
G
Applications
• DC−DC Buck Converters
ABSOLUTE MAXIMUM RATINGS
A
MARKING DIAGRAM
T = 25°C unless otherwise noted.
Symbol
Parameter
Ratings
100
Unit
V
ZXYKK
151
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
20
V
I
D
A
Continuous T = 25°C (Note 1a)
3.3
20
A
Z
= Assembly Plant Code
= Date Code (Year &Week)
= Lot Traceability Code
= Specific Device Code
Pulsed (Note 3)
XY
KK
151
P
D
Power Dissipation, T = 25°C
W
A
(Note 1a)
(Note 1b)
2.4
0.9
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
FDMA86151L
WDFN6
3000 /
Tape & Reel
THERMAL CHARACTERISTICS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance,
°C/W
q
JA
Junction to Ambient
(Note 1a)
52
145
(Note 1b)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2023 − Rev. 4
FDMA86151L/D
FDMA86151L
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA,
Referenced to 25°C
−
69
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
2.0
3.0
V
GS(th)
DS
GS D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, Referenced to 25°C
−
−6
−
mV/°C
DVGS(th)
DTJ
D
V
V
V
= 10 V, I = 3.3 A,
−
−
−
60
83
88
R
Static Drain to Source On–Resistance
mW
GS
D
DS(on)
= 4.5 V, I = 2.7 A
132
150
GS
GS
D
= 10 V, I = 3.3 A,
102
D
T = 125°C
J
g
FS
Forward Transconductance
V
DD
= 5 V, I = 3.3 A
−
8.6
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
−
−
322
55
3
450
80
5
V
= 50 V, V = 0 V,
pF
iss
DS
GS
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
1.9
3.8
W
G
SWITCHING CHARACTERISTICS
t
Turn–On Delay Time
Rise Time
−
−
−
−
−
5.6
1.4
11
12
10
20
10
7.3
V
V
= 50 V, I = 3.3 A,
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
Turn–Off Delay Time
Fall Time
d(off)
t
f
1.6
5.2
V
= 0 V to 10 V, V = 50 V,
DD
= 3.3 A
Q
Total Gate Charge
nC
GS
GS
DD
g(TOT)
I
D
V
= 0 V to 4.5 V, V = 50 V,
−
2.6
3.7
DD
I
D
= 3.3 A
Q
Gate to Source Charge
−
−
1.1
1.0
−
−
V
= 50 V, I = 3.3 A
D
gs
Q
Gate to Drain “Miller” Charge
gd
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 3.3 A (Note 2)
−
−
−
0.8
33
25
1.2
53
40
V
SD
GS
S
t
ns
nC
I = 3.3 A, di/dt = 100 A/ms
F
rr
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
JA
a) 52°C/W when mounted
b) 145°C/W when
mounted on a minimum
pad of 2 oz copper.
2
on a 1 in pad of 2 oz. copper.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
3. Pulsed Id limited by junction temperature, td < =10 ms, please refer to SOA curve for more details.
www.onsemi.com
2
FDMA86151L
TYPICAL CHARACTERISTICS
(T = 25°C Unless Otherwise Noted)
J
20
5
4
V
= 10 V
V
= 3.5 V
GS
GS
V
= 4.5 V
GS
V
= 4 V
GS
15
10
V
GS
= 6 V
3
2
1
0
V
= 4.5 V
= 6 V
GS
V
= 4 V
GS
5
0
V
= 3.5 V
GS
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 10 V
V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
GS
1
2
3
4
0
4
8
12
16
20
0
5
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.1
1.8
320
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= 3.3 A
D
= 10 V
GS
240
160
I
D
= 3.3 A
1.5
1.2
T = 125°C
J
80
0
0.9
0.6
T = 25°C
J
2
4
6
8
10
−75 −50 −25
0
25
50
75 100 125 150
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate−to−Source
Junction Temperature
Voltage
20
20
10
V
GS
= 0 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
16
12
T = 150°C
J
V
DD
= 5 V
1
T = 25°C
J
0.1
T = 150°C
J
8
4
T = 25°C
J
0.01
T = −55°C
J
T = −55°C
J
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
6
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 5. Transfer Characteristics
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3
FDMA86151L
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C Unless Otherwise Noted)
J
10
8
1000
C
iss
I
D
= 3.3 A
100
C
oss
6
4
V
DD
= 25 V
V
DD
= 50 V
C
10
V
DD
= 75 V
rss
f = 1 MHz
2
0
V
GS
= 0 V
1
0.1
1
10
100
6
0
1
2
3
4
5
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 8. Capacitance vs Drain
to Source Voltage
Figure 7. Gate Charge Characteristics
50
2000
1000
10 ms
10
1
100
100 ms
This area
is limited by
1 ms
10 ms
100 ms
10
1
0.1
R
DS(on)
1 s
Single Pulse
= 145°C/W
Single Pulse
0.01 T = Max Rated
10 s
DC
R
q
JA
J
T = 25°C
R
= 145°C/W
q
A
JA
T = 25°C
A
0.01
0.1
−5
−4
−3
−2
−1
0.1
1
400
10
10
10
10
10
1
10
100 1000
10
100
V
DS
, Drain to Source Voltage (V)
t, Pulse Width (s)
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Forward Bias Safe Operating Area
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
0.01
P
DM
0.1
0.05
0.02
0.01
t
1
t
2
Notes:
(t) = r(t) x R
Z
q
q
JA
JA
R
= 145°C/W
θ
JA
0.001
Single Pulse
Peak T = P
x Z (t) + T
q
JA A
J
DM
Duty Cycle: D = t /t
1
2
0.0001
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
100
1000
t, Rectangular Pulse Duration (sec)
Figure 11. Single Junction−to−Ambient Transient Thermal Response Curve
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4
FDMA86151L
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511DB
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13617G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
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