FDMC15N06 [ONSEMI]
55 V、15 A、90 mΩ、N 沟道 UltraFET 功率 MOSFET;
| 型号： | FDMC15N06 |
| 厂家： | 
ONSEMI |
| 描述： | 55 V、15 A、90 mΩ、N 沟道 UltraFET 功率 MOSFET 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：551K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power,
N-Channel, UltraFET
WDFN8 3.3X3.3, 0.65P
CASE 511DQ
55 V, 15 A, 90 mW
FDMC15N06
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
Description
These N−Channel power MOSFETs are manufactured using the
innovative UItraFET process. This advanced process technology
achieves the lowest possible on−resistance per silicon area, resulting
in outstanding performance.
D
This device is capable of withstanding high energy in the avalanche
mode and the diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power efficiency
is important, such as switching regulators, switching converters,
motor drivers, relay drivers, low voltage bus switches, and power
management in portable and battery−operated products.
MARKING DIAGRAM
ZXYKK
15N06
Z
XY
KK
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Traceability Code
Features
• R
= 75 mꢀ (Typ.) @ V = 10 V, I = 15 A
GS D
DS(on)
• 100% Avalanche Tested
15N06 = Specific Device Code
• These Device is Pb−Free and RoHS Compliant
ORDERING INFORMATION
†
Device
Shipping
Package
FDMC15N06
WDFN8
3000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
6
Publication Order Number:
March, 2023 − Rev 3
FDMC15N06/D
FDMC15N06
MOSFET MAXIMUM RATINGS T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
55
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
20
V
I
D
A
−Continuous (T = 25°C)
15
9
2.4
C
−Continuous (T = 100°C)
C
−Continuous (T = 25°C) (Note 3)
A
I
Drain Current
−Pulsed (Note 4)
60
A
DM
E
I
Single Pulse Avalanche Energy (Note 5)
36
mJ
A
AS
Avalanche Energy
15
AR
E
Repetitive Avalanche Energy
3.5
mJ
W
AR
P
Power Dissipation
D
(T = 25°C)
35
2.3
C
(T = 25°C)
A
T , T
Operating and Storage Temperature Range
−55 to +150
°C
°C
J
STG
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case, Max
Value
3.5
Unit
R
°C/W
θ
JC
JA
R
Thermal Resistance, Junction to Ambient, Max (Note 3)
53
θ
ELECTRICAL CHARACTERISTICS Tc = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
Drain to Source Breakdown Voltage
I
I
= 250 ꢁ A, V = 0 V, T = 25 °C
55
−
−
−
V
DSS
D
GS
C
Breakdown Voltage Temperature
Coefficient
= 250 ꢁ A, Referenced to 25°C
−
70
V/°C
ꢂ BVDSS
ꢂ TJ
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
= 50 V, V = 0 V
−
−
−
−
1
250
ꢁ
A
DSS
GS
= 45 V, T = 150 °C
C
I
Gate to Body Leakage Current
V
GS
=
20 V, V = 0 V
−
−
100
nA
GSS
DS
On Characteristics
V
Gate to Source Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
DS
= V , I = 250 ꢁ A
2.0
−
−
0.075
5
4.0
0.090
−
V
ꢀ
S
GS(th)
DS D
R
= 10 V, I = 15 A
D
DS(on)
g
FS
= 20 V, I = 15 A
−
D
Dynamic Characteristics
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
265
97
350
130
42
pF
pF
pF
nC
nC
nC
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
28
rss
Q
V
V
= 30 V, I = 15 A,
8.8
1.7
3.6
11.5
−
g(tot)
DS
D
= 10 V (Note 4)
GS
Q
gs
gd
Q
−
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7
FDMC15N06
ELECTRICAL CHARACTERISTICS Tc = 25 °C unless otherwise noted.(continued)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Switching Characteristics
t
Turn−On Delay Time
VDD = 30 V, ID = 15 A,
GS = 10 V, RG = 25 Ω (Note 6)
−
−
−
−
9.5
36.5
22.5
22
29
83
55
54
ns
ns
ns
ns
d(on)
V
t
r
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
t
d(off)
t
f
Drain−Source Diode Characteristics
I
Maximum Continuous Drain to Source
Diode Forward Current
−
−
−
−
−
−
15
60
A
A
V
S
I
Maximum Pulsed Drain to Source
Diode Forward Current
1.25
SM
V
SD
Drain to Source Diode Forward
Voltage
VGS = 0 V, I = 15 A
SD
t
Reverse Recovery Time
VGS = 0 V, I = 15 A,
F
−
−
30
35
−
−
ns
rr
SD
dl /dt = 100 A/ꢁ s (Note 7)
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
3. R
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR−4 material R
is guaranteed by design
JC
ꢃ
ꢃ
JA
while R
is determined by the user’s board design.
ꢃ
CA
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 53 °C/W when mounted on
2
pad of 2 oz copper
a 1 in
4. Repetitive rating: pulse−width limited by maximum junction temperature.
5. L = 1 mH, I = 8.5 A, R = 25 Ω, starting TJ = 25°C.
AS
G
6. Essentially independent of operating temperature typical characteristics.
7. I ≤ 15 A, di/dt ≤ 200 A/ꢁ s, V ≤ 40 V, starting T = 25°C.
SD
DD
J
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8
FDMC15N06
TYPICAL CHARACTERISTICS
50
10
50
10
V
= 10 V
GS
15 V
25°C
10 V
150°C
8 V
−55°C
NOTES:
7 V
6 V
5 V
NOTES:
1. 250 ꢁ s Pulse Test
1. V = 5 V
2. 250 ꢁ s Pulse Test
DS
2. T = 25°C
C
1
1
0.1
2
3
4
5
6
7
8
1
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Transfer Characteristics
Figure 12. On−Region Characteristics
100
0.25
0.20
0.15
0.10
0.05
150°C
25°C
10
V
GS
= 10 V
V
GS
= 20 V
NOTES:
1. V = 0 V
GS
2. 250 ꢁ s Pulse Test
NOTE: T = 25°C
C
1
0.0
0.00
0.5
1.0
1.5
0
10
20
30
40
50
2.0
V
, BODY DIODE FORWARD VOLTAGE (V)
T , JUNCTION TEMPERATURE (5C)
SD
J
Figure 15. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 14. On−Resistance Variation vs.
Drain Current and Gate Voltage
10
800
600
400
C
= Cgs + Cgd (Cds = shorted)
V
V
= 11 V
= 30 V
= 44 V
ISS
DS
DS
DS
Coss = Cds + Cgd
Crss = Cgd
V
8
6
4
2
0
C
OSS
NOTES:
1. V = 0 V
GS
C
2. f = 1MHz
ISS
Cr
200
0
SS
NOTE: I = 15 A
D
0.1
1
10
0
2
4
6
8
10
1
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 16. Capacitance Characteristics
Figure 17. Gate Charge Characteristics
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9
FDMC15N06
TYPICAL CHARACTERISTICS (CONTINUED)
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
NOTES:
0.5
NOTES:
1. V = 10 V
1. V = 0 V
GS
GS
2. I = 250 ꢁA
D
2. I = 15 A
D
0.0
−100
−50
0
50
100
150
200
0
50
100
150
200
−100
−50
T , Junction Temperature (5C)
T , Junction Temperature (5C)
J
J
Figure 18. Breakdown Voltage Variation
vs. Temperature
Figure 19. On−Resistance Variation vs.
Temperature
16
100
10
1
12
8
0.1
4
NOTES:
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
0
25
0.01
100
125
150
0.1
1
10
100
50
75
V
DS
, DRAIN−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (5C)
C
Figure 20. Unclamped Inductive
Switching Capability
Figure 21. Maximum Drain
Current vs. Case Temperature
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
R
= 125 °C/W
ꢃ
JA
0.001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 22. Thermal Response Curve
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10
FDMC15N06
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
toff
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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11
FDMC15N06
+
DUT
VDS
_
I SD
L
Driver
G
Same Type
as DUT
VDD
VGS
Sdv/dt controlled by RG
SI SD controlled by pulse period
Gate Pulse Width
Gate Pulse Period
VGS
( Driver )
D =
10 V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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