FDMC5614P [ONSEMI]
P 沟道 Power Trench® MOSFET -60V，-13.5A，100mΩ;
| 型号： | FDMC5614P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道 Power Trench® MOSFET -60V，-13.5A，100mΩ PC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Pin 1
MOSFET – P-Channel,
POWERTRENCH)
-60 V, -13.5 A, 100 mW
S
S
S
G
D
D
D
D
FDMC5614P,
FDMC5614P-L701
Bottom
Top
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
General Description
FDMC5614P, FDMC5614P−L701
This P−Channel MOSFET is a rugged gate version of onsemi’s
advanced POWERTRENCH process. It has been optimized for power
management applications requiring a wide range of gate drive voltage
ratings (4.5 V − 20 V).
MARKING DIAGRAM
Features
$Y&Z&2&K
FDMC
5614P
• Max r
• Max r
= 100 mW at V = −10 V, I = −5.7 A
GS D
DS(on)
DS(on)
= 135 mW at V = −4.5 V, I = −4.4 A
GS
D
• Low Gate Charge
• Fast Switching Speed
$Y
&Z
&2
&K
FDMC
5614P
= Logo
• High Performance Trench Technology for Extremely Low r
• High Power and Current Handling Capability
• These Devices are Pb−Free and are RoHS Compliant
DS(on)
= Assembly Location
= Date Code (Year and Week)
= Lot Run Traceability Code
= Specific Device Code
= Specific Device Code
Applications
• Power Management
• Load Switch
• Battery Protection
PIN ASSIGNMENT
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
P−Channel MOSFET
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
January, 2022 − Rev. 4
FDMC5614P/D
FDMC5614P, FDMC5614P−L701
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Rating
−60
Unit
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DS
GS
V
20
V
Continuous (Package Limited)
Continuous (Silicon Limited)
Continuous (Note 1a)
Pulsed
T
T
= 25°C
= 25°C
−13.5
−14
A
C
I
D
C
T = 25°C
A
−5.7
−23
P
D
Power Dissipation
T
C
= 25°C
42
W
Power Dissipation (Note 1a)
Operating and Storage Junction Temperature Range
T = 25°C
A
2.1
T , T
−55 to + 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
RqJC
Parameter
Rating
3.0
Unit
Thermal Resistance, Junction to Case
°C/W
RqJA
Thermal Resistance, Junction to Ambient (Note 1a)
60
2
1. R
R
is determined with the device mounted on a 1 in oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed by design while
q
JC
q
JA
is determined by the user’s board design.
q
JA
a. R
= 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’ x1.5’ x 0.062’ thick PCB.
= 135°C/W when mounted on a minimum pad of 2 oz copper.
q
JA
JA
b. R
q
2
a. 60°C/W when mounted on a 1 in pad
b. 135°C/W when mounted on a minimum
pad of 2 oz copper
of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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2
FDMC5614P, FDMC5614P−L701
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−60
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature Co-
efficient
= −250 mA, referenced to 25°C
−
−54
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −48 V, V = 0 V
−
−
−
−
−1
mA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−1.0
−1.95
−3
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, referenced to 25°C
−
4.7
−
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −5.7 A
−
−
−
−
84
108
140
11
100
135
168
−
mW
DS(on)
D
= −4.5 V, I = −4.4 A
D
= −10 V, I = −5.7 A, T = 125°C
D
J
g
FS
= −15 V, I = −5.7 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −30 V, V = 0 V, f = 1 MHz
−
−
−
795
140
60
1055
185
90
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= −30 V, I = −1.0 A,
−
−
−
−
−
−
−
10
11
21
23
65
22
20
2.1
3.5
ns
ns
d(on)
DD
GS
D
= −10 V, R
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
32
11
ns
d(off)
t
f
ns
Q
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
= −10 V, V = −30 V, I = −5.7 A
15
1.6
2.7
nC
nC
nC
g(TOT)
DD
D
Q
Q
gs
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = −3.2 A
−
−0.8
−1.2
V
S
t
Reverse Recovery Time
I = −3.2 A, di/dt = 100 A/ms
F
−
−
−
−
36
29
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FDMC5614P, FDMC5614P−L701
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
2.0
25
20
15
10
5
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
V
= −10 V
GS
V
GS
= −3.0 V
1.8
1.6
1.4
1.2
1.0
0.8
V
= −4.5 V
GS
V
GS
= −5 V
V
GS
= −3.5 V
V
= −5.0 V
= −10 V
GS
V
V
= −3.5 V
= −3.0 V
GS
V
GS
= −4.5 V
GS
V
GS
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
0
0
5
10
15
20
25
0
1
2
3
4
5
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
350
I
V
= −5.7 A
I
= −5.7 A
D
D
= −10 V
GS
300
250
200
150
100
50
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
T = 125°C
J
T = 25°C
J
−50 −25
0
25
50
75 100 125 150
2
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
30
10
30
V
GS
= 0 V
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
25
T = 125°C
J
V
DD
= −5 V
1
T = 25°C
20
15
10
5
J
0.1
T = 25°C
J
0.01
1E−3
1E−4
T = 125°C
J
T = −55°C
J
T = −55°C
J
0
0
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC5614P, FDMC5614P−L701
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
2000
I
D
= −5.7 A
1000
100
10
V
= −20 V
DD
C
C
ISS
6
V
DD
= −30 V
4
OSS
V
DD
= −40 V
C
RSS
2
f = 1 MHz
= 0 V
V
GS
0
0
4
8
12
16
0.1
1
10
60
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
60
8
7
6
r
DS(on) LIMITED
100 ms
10
1
5
1 ms
4
T = 25°C
J
10 ms
3
2
100 ms
0.1
1 s
10 s
DC
SINGLE PULSE
T = MAX RATED
T = 125°C
J
J
0.01
R
= 135°C/W
q
JA
T = 25°C
A
1E−3
1
0.1
1
10
100
0.01
0.1
1
10
100 200
t , TIME IN AVALANCHE (ms)
AV
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Forward Bias Safe Operating Area
1000
V
GS
= −10 V
FOR TEMPERATURES
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
100
10
150 * TA
Ǹ
I + I25ƪ ƫ
125
SINGLE PULSE
= 135°C/W
R
q
JA
T = 25°C
A
1
0.5
−2
10−4
10−3
10
10−1
100
101
102
103
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDMC5614P, FDMC5614P−L701
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
t
1
t
2
0.01
Z
q
(t) = r(t) × R
q
JA
JA
R
= 135°C/W
q
JA
SINGLE PULSE
10−3
Peak T = P
Duty Cycle, D = t / t
× Z (t) + T
q
JA A
J
DM
0.001
1
2
0.0005
10−4
10
10−1
100
101
102
103
−2
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
ORDERING INFORMATION
†
Device
FDMC5614P
Device Marking
Package Type
Reel Size
Tape Width
Shipping
FDMC5614P
FDMC5614P
WDFN8 3.3x3.3, 0.65P
Power 33
7”
8 mm
3000 / Tape & Reel
(Pb−Free)
FDMC5614P−L701
WDFN8 3.3x3.3, 0.65P
Power 33
7”
8 mm
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
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For additional information, please contact your local Sales Representative at
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