FDMC6679AZ [ONSEMI]
P 沟道，Power Trench® MOSFET，-30V，-20A，10mΩ;
| 型号： | FDMC6679AZ |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，Power Trench® MOSFET，-30V，-20A，10mΩ |
| 文件： | 总8页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel,
POWERTRENCH)
Pin 1
G
S
S
S
-30 V, -20 A, 10 mW
D
D
D
D
Bottom
Top
FDMC6679AZ
WDFN8 3.3x3.3, 0.65P
CASE 511DH
General Description
The FDMC6679AZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
MARKING DIAGRAM
technologies have been combined to offer the lowest r
protection.
and ESD
DS(on)
FDMC
6679AZ
ALYW
Features
• Max r
• Max r
= 10 mW at V = −10 V, I = −11.5 A
GS D
DS(on)
DS(on)
= 18 mW at V = −4.5 V, I = −8.5 A
GS
D
• HBM ESD Protection Level of 8 kV Typical (Note 3)
FDMC6679AZ = Specific Device Code
• Extended V
range (−25 V) for Battery Applications
GSS
A
L
YW
= Assembly Location
= Wafer Lot Number
= Assembly Start Week
• High Performance Trench Technology for Extremely Low r
• High Power and Current Handling Capability
• This Device is Pb−Free and Halide Free
DS(on)
Applications
PIN ASSIGNMENT
• Load Switch in Notebook and Server
• Notebook Battery Pack Power Management
D
D
D
5
6
7
G
S
S
S
4
3
2
D
8
1
ORDERING INFORMATION
See detailed ordering and shipping information on page 6
of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2022 − Rev. 5
FDMC6679AZ/D
FDMC6679AZ
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Rating
−30
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
25
V
I
D
Continuous
T
C
= 25°C
−20
A
Continuous (Note 1a)
Pulsed
T = 25°C
A
−11.5
−32
P
D
Power Dissipation
T
C
= 25°C
41
W
Power Dissipation (Note 1a)
Operating and Storage Junction Temperature Range
T = 25°C
A
2.3
T , T
−55 to + 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
3.0
Unit
R
Thermal Resistance, Junction to Case
_C/W
q
JC
R
Thermal Resistance, Junction to Ambient (Note 1a)
53
q
JA
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a. 53°C/W when mounted on
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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2
FDMC6679AZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown
Voltage
I
I
= −250 mA, V = 0 V
−30
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 mA, Referenced to 25°C
29
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= −24 V, V = 0 V
−1
−100
10
mA
mA
DSS
GS
= −24 V, V = 0 V, T = 125°C
GS
J
I
Gate to Source Leakage Current
= 25 V, V = 0 V
DS
GSS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−1.0
−1.8
−3
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, Referenced to 25°C
–7
mV/°C
DVGS(th)
DTJ
D
r
Static Drain
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −11.5 A
8.6
12
12
46
10
18
15
mW
DS(on)
D
to Source On Resistance
= −4.5 V, I = −8.5 A
D
= −10 V, I = −11.5 A, T = 125°C
D
J
g
FS
Forward Transconductance
= −5 V, I = −11.5 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −15 V, V = 0 V, f = 1 MHz
2985
570
3970
755
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
500
750
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= −15 V, I = −11.5 A, V = −10 V,
GEN
12
14
63
46
65
37
8.7
17
21
25
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
100
73
ns
d(off)
t
f
ns
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to −10 V, V = −15 V, I = −11.5 A
91
nC
nC
nC
nC
g
DD
D
= 0 V to −5 V, V = −15 V, I = −11.5 A
52
DD
D
Q
Gate to Source Charge
= −15 V, I = −11.5 A
D
gs
Q
Gate to Drain “Miller” Charge
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = −11.5 A (Note 2)
0.83
0.71
1.30
1.20
V
GS
S
= 0 V, I = −1.6 A (Note 2)
GS
S
t
Reverse Recovery Time
I = −11.5 A, di/dt = 100 A/ms
F
31
16
49
28
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FDMC6679AZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
32
4
V
GS
V
GS
V
GS
= −10 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
= −6 V
= −4.5 V
V
GS
= −3.0 V
24
16
3
2
V
= −4 V
GS
V = −3.5 V
GS
V
GS
= −3.5 V
V
GS
= −3 V
V
= −4.5 V
= −10 V
GS
V
= −4 V
GS
8
0
1
0
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
V
= −6 V
GS
16
−I , Drain Current (A)
0
8
24
32
1
2
3
0
−V , Drain to Source Voltage (V)
D
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
50
40
30
1.6
1.4
1.2
1.0
0.8
0.6
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= −11.5 A
I
D
= −11.5 A
D
= −10 V
GS
20
10
T = 125°C
J
T = 25°C
J
0
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
10
−V , Gate to Source Voltage (V)
GS
T , Junction Temperature (5C)
J
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
32
40
10
V
GS
= 0 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
DS
= −5 V
24
16
T = 25°C
J
1
T = 150°C
J
0.1
0.01
T = 25°C
J
T = −55°C
J
8
0
T = −55°C
J
T = 150°C
J
0.001
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
4
−V , Gate to Source Voltage (V)
GS
−V , Body Diode Forward Voltage (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC6679AZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10000
10
8
f = 1 MHz
GS
I
D
= −11.5 A
V
= 0 V
C
iss
V
DD
= −15 V
6
V
DD
= −10 V
1000
100
V
DD
= −20 V
C
C
oss
rss
4
2
0
0
20
0.1
1
10
30
10
30
40
50
60
70
−V , Drain to Source Voltage (V)
DS
Q , Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
50
60
50
40
30
20
10
T = 25°C
J
V
GS
= −10 V
T = 100°C
J
V
= −4.5 V
GS
T = 125°C
J
Limited by Package
R
= 3.0°C/W
q
JC
1
0.001
0
0.01
1
10
100
25
50
75
100
125
150
0.1
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs Case Temperature
−2
100
10
10
10
10
10
10
10
10
V
DS
= 0 V
−3
−4
−5
−6
−7
−8
1 ms
10 ms
1
This Area is
Limited by r
100 ms
T = 125°C
J
DS(on)
T = 25°C
J
1 s
0.1
Single Pulse
T = Max Rated
10 s
DC
J
q
R
= 125°C/W
JA
T = 25°C
A
0.01
0.01
0.1
1
10
100
0
10
5
15
20
25
30
35
−V , Gate to Source Voltage (V)
GS
−V , Drain to Source Voltage (V)
DS
Figure 11. Forward Bias Safe Operating Area
Figure 12. Igss vs. Vgss
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5
FDMC6679AZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
1000
100
10
V
GS
= −10 V
Single pulse
= 125°C/W
T = 25°C
A
R
q
JA
1
0.3
−3
−2
−1
10
10
10
1
10
100
1000
t, Pulse Width (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
Duty Cycle − Descending Order
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
0.01
Notes:
Duty Factor: D = t /t
1
2
Peak T = P
x Z
x R
+ T
JA A
Single pulse
q
q
J
DM
JA
R
= 125°C/W
q
JA
0.001
−3
−2
−1
10
10
10
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 14. Junction−to−Ambient Transient Thermal Response Curve
ORDERING INFORMATION
Device
†
Device Marking
Package Type
Shipping
FDMC6679AZ
FDMC6679AZ
WDFN8 3.3x3.3, 0.65P, Case 511DH
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05 (4X)
(0.79)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05 (3X)
8
5
0.35 0.05 (8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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