FDMC6675BZ [ONSEMI]
P 沟道 Power Trench® MOSFET -30V，-20A，14.4mΩ;
| 型号： | FDMC6675BZ |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道 Power Trench® MOSFET -30V，-20A，14.4mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDMC6675BZ
P-Channel POWERTRENCH)
MOSFET
−30 V, −20 A, 14.4 mW
Description
www.onsemi.com
The FDMC6675BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
V
R
MAX
I
D MAX
technologies have been combined to offer the lowest R
protection.
and ESD
DS
DS(on)
DS(on)
−30 V
−20 A
14.4 mW @ 10 V
Features
P−Channel
• Max R
• Max R
= 14.4 mW at V = −10 V, I = −9.5 A
GS D
DS(on)
= 27.0 mW at V = −4.5 V, I = −6.9 A
DS(on)
GS
D
S
S
1
2
8
7
D
D
• HBM ESD Protection Level of 8 kV Typical (Note 3)
• Extended V
Range (−25 V) for Battery Applications
GSS
• High Performance Trench Technology for Extremely Low R
• High Power and Current Handling Capability
DS(on)
S
3
4
6
5
D
D
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
G
Compliant
Typical Applications
Pin 1
G
• Load Switch in Notebook and Server
• Notebook Battery Pack Power Management
S
S
S
D
D
D
D
Bottom
Top
WDFN8 3.3x3.3, 0.65P
CASE 511DR
MARKING DIAGRAM
$Y&Z&2&K
FDMC
6675BZ
$Y
&Z
&2
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FDMC6675BZ
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
September, 2018 − Rev. 4
FDMC6675BZ/D
FDMC6675BZ
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
A
Symbol
Parameter
Ratings
−30
Unit
V
V
DS
Drain to Source Voltage
Gate to Source Voltage
V
A
V
GS
25
I
D
−20
Drain Current
− Continuous
T = 25°C
C
−9.5
− Continuous
− Pulsed
T = 25°C (Note 1a)
A
−32
W
P
D
36
Power Dissipation
Power Dissipation
T = 25°C
C
2.3
T = 25°C (Note 1a)
A
°C
T , T
−55 to +150
Operating and Storage Junction Temperature Range
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
Ratings
3.4
Unit
°C/W
R
q
JC
JA
R
53
q
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Size
Tape Width
Shipping (Qty / Packing)
FDMC6675BZ
FDMC6675BZ
WDFN8 3.3x3.3, 0.65P
(MLP)
13″
12 mm
3000 / Tape & Reel
(Pb−Free/Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Volt-
age
−30
−
−
−
−
V
DSS
I
I
= −250 mA, V = 0 V
GS
D
Breakdown Voltage
Temperature Coefficient
= −250 mA, referenced to 25°C
−20
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
V
= −24 V, V = 0 V
−
−
−
−
−1
−100
mA
mA
DSS
DS
DS
GS
= −24 V, V = 0 V, T = 125°C
GS
J
I
Gate to Source Leakage Current
V
GS
=
25 V, V = 0 V
−
−
10
GSS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−1.0
−
−1.9
−6.0
−3.0
−
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, referenced to 25°C
mV/°C
DVGS(th)
DTJ
D
R
Static Drain to Source
On Resistance
V
GS
V
GS
V
GS
V
DD
= −10 V, I = −9.5 A
−
−
−
−
10.7
17.4
15.2
28
14.4
27.0
20.5
−
mW
DS(on)
D
= −4.5 V, I = −6.9 A
D
= −10 V, I = −9.5 A, T = 125°C
D
J
g
FS
Forward Transconductance
= −5 V, I = −9.5 A
S
D
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2
FDMC6675BZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −15 V, V = 0 V, f = 1 MHz
−
−
−
2154
392
2865
525
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
349
525
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
R
= −15 V, I = −9.5 A, VGS = −10 V,
−
−
−
−
−
−
−
−
11
10
44
26
46
26
6.4
13
20
20
71
42
65
37
−
ns
d(on)
DD
D
= 6 W
GEN
t
r
t
Turn−off Delay Time
Fall Time
d(off)
t
f
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain ”Miller” Charge
V
GS
V
GS
V
DD
V
DD
= 0V to −10 V, V = −15 V, I = −9.5 A
nC
nC
nC
nC
g
g
DD
D
= 0V to −5 V, V = −15 V, I = −9.5 A
DD
D
Q
= −15 V, I = −9.5 A
D
gs
gd
Q
= −15 V, I = −9.5 A
−
D
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = −9.5 A (Note 2)
−
−
−
−
−0.89
−0.73
24
−1.3
−1.2
38
V
V
SD
GS
S
= 0 V, I = −1.6 A (Note 2)
GS
S
t
Reverse Recovery Time
I = −9.5 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
15
27
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 53°C/W when mounted on
b) 125°C/W when mounted on
2
a 1 in pad of 2 oz copper
a minimum pad
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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3
FDMC6675BZ
TYPICAL CHARACTERISTICS
(T = 25 °C unless otherwise noted)
J
32
24
16
8
5.0
4.5
Pulse Duration = 80 μs
Duty Cycle = 0.5% Max
V
GS
V
GS
V
GS
V
GS
= −4 V
V
GS
= −3.5 V
= −4.5 V
= −6 V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
= −10 V
V
GS
= −4 V
V
GS
= −3.5 V
V
= −4.5 V
= −6 V
GS
V
GS
Pulse Duration = 80 μs
Duty Cycle = 0.5% Max
V
GS
= −10 V
0
0.0
0
8
16
24
32
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, Drain-Source Voltage [V]
ID, Drain Current (A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On−Resistance
vs Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
Pulse Duration = 80 μs
Duty Cycle = 0.5% Max
I
= −9.5 A
D
V
= −10 V
GS
I
D
= −9.5 A
TJ = 125 o
C
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
t
, Time in Avalanche (ms)
AV
V
GS
, Gate to Source Voltage [V]
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On−Resistance vs Gate to
Source Voltage
100
10
32
24
16
Pulse Duration = 80 μs
Duty Cycle = 0.5% Max
VGS = 0 V
VDS = −5 V
TJ = 150 o
C
TJ = 25 o
C
TJ = 150 o
C
T
J = 25 o
C
0.1
8
0
TJ = −55oC
1.0
, Body Diode Forward Voltage (V)
TJ = −55oC
4
0.01
0.2
0.4
0.6
0.8
1.2
0
1
2
3
5
V
, Gate to Source Voltage (V)
V
SD
GS
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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4
FDMC6675BZ
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(T = 25 °C unless otherwise noted)
J
10
8
5000
ID = −9.5 A
VDD = −10 V
Ciss
6
1000
VDD = −15 V
Coss
4
VDD = −20 V
Crss
2
f = 1 MHz
GS = 0 V
V
0
0
100
0.1
10
20
30
40
50
1
10
, Drain to Source Voltage
DS
30
Q , Gate Charge [nC]
g
V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
50
10
50
40
VGS = −10 V
TJ = 25 o
C
V
GS = −4.5 V
30
20
10
0
TJ = 100 o
C
TJ = 125 o
C
Limited by Package
RqJC = 3.4 oC/W
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, Drain-Source Voltage
[V]
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current
vs Case Temperature
10−4
70
VGS = 0V
10−5
10
TJ = 150oC
1 ms
10−6
10 ms
1
THIS AREA IS
10−7
10−8
10−9
100 ms
LIMITED BY r
DS(on)
TJ = 25oC
SINGLE PULSE
1 s
0.1
TJ = MAX RATED
qJA = 125oC/W
A = 25oC
10 s
DC
R
T
0.01
0.01
0.1
1
10
100
0
5
10
, Gate to Source Voltage (V)
GS
15
20
25
30
V
DS
, Drain to Source Voltage (V)
V
Figure 11. Forward Bias Safe Operating Area
Figure 12. Igss vs Vgss
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5
FDMC6675BZ
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(T = 25 °C unless otherwise noted)
J
1000
100
10
V
= − 10 V
GS
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°c
1
0.3
10−3
10−2
10−1
11
0
100
1000
t, Pulse Width (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
0.1
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
Notes:
(t) = r(t) × R
Z
q
q
JA
JA
R
q
= 125°C/W
JA
Peak T = P
Duty Cycle, D = t / t
1
× Z (t) + T
q
JA C
J
DM
SINGLE PULSE
2
0.001
10−3
10−2
10−1
11
0
100
1000
t, Rectangular Pulse Duration (s)
Figure 14. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC
and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE B
DATE 02 FEB 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13650G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
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