FDMC7200 [ONSEMI]
双 N 沟道 PowerTrench® MOSFET 30V，12mΩ 和 23.5mΩ;
| 型号： | FDMC7200 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道 PowerTrench® MOSFET 30V，12mΩ 和 23.5mΩ 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Dual, N-Channel,
POWERTRENCH)
D1
D1
D1
Pin 1
G1
D1
D2/S1
V
IN
30 V, 12 mW and 23.5 mW
V
IN
S2
V
IN
S2
S2
G
HS
V
G2
IN
FDMC7200
SWITCH
NODE
Bottom
General Description
GND
GND
This device includes two specialized N−Channel MOSFETs in a
dual Power 33 (3 mm x 3 mm MLP) package. The switch node has
been internally connected to enable easy placement and routing of
synchronous buck converters. The control MOSFET (Q1) and
synchronous MOSFET (Q2) have been designed to provide optimal
power efficiency.
GND
G
LS
Bottom
WDFN8 3x3, 0.65P
(Power 33)
CASE 511DE
MARKING DIAGRAM
Features
• Q1: N−Channel
♦ Max R
♦ Max R
= 23.5 mW at V = 10 V, I = 6 A
GS D
DS(on)
&Z&2&K
FDMC
7200
= 38 mW at V = 4.5 V, I = 5 A
DS(on)
GS
D
• Q2: N−Channel
♦ Max R
♦ Max R
= 12 mW at V = 10 V, I = 8 A
GS D
DS(on)
= 18 mW at V = 4.5 V, I = 7 A
DS(on)
GS
D
• This Device is Pb−Free, Halide Free and is RoHS Compliant
&Z
&2
&K
= Assembly Plant Code
= 2−Digit Date−Code
= 2−Digit Lot Code
Applications
• Mobile Computing
• Mobile Internet Devices
• General Purpose Point of Load
FDMC7200 = Device Code
PIN ASSIGNMENT
Q2
S2
5
6
7
8
4
3
2
1
D1
D1
D1
G1
S2
S2
G2
Q1
ORDERING INFORMATION
†
Device
Package
Shipping
WDFN8
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
FDMC7200
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
April, 2023 − Rev. 4
FDMC7200/D
FDMC7200
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
C
Symbol
Parameter
Q1
30
20
8
Q2
Unit
V
V
Drain to Source Voltage
Gate to Source Voltage
30
DS
GS
V
(Note 3)
20
V
I
D
Drain Current − Continuous (Package Limited)
− Continuous (Silicon Limited)
− Continuous
T
T
= 25°C
= 25°C
8
40
A
C
C
20
T = 25°C 6 (Note 1a)
8 (Note 1b)
40
A
− Pulsed
40
P
D
Power Dissipation
T = 25°C 1.9 (Note 1a) 2.2 (Note 1b)
A
W
Power Dissipation
T = 25°C 0.7 (Note 1c) 0.9 (Note 1d)
A
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
C
Symbol
Parameter
Thermal Resistance, Junction to Ambient
Q1
Q2
Unit
65 (Note 1a) 55 (Note 1b)
180 (Note 1c) 145 (Note 1d)
°C/W
R
q
JA
R
q
JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JC
7.5
4
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
D
I
D
= 250 mA, V = 0 V
Q1
Q2
30
30
−
−
−
−
V
DSS
GS
= 250 mA, V = 0 V
GS
Breakdown Voltage Temperature
Coefficient
I
D
I
D
= 250 mA, referenced to 25°C
= 250 mA, referenced to 25°C
Q1
Q2
−
−
14
14
−
−
mV/°C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
Q1
Q2
−
−
−
−
1
1
mA
DSS
DS
DS
GS
= 24 V, V = 0 V
GS
I
V
GS
=
20 V, V = 0 V
Q1
Q2
−
−
−
−
100
100
nA
GSS
GS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
V
GS
= V , I = 250 mA
Q1
Q2
1.0
1.0
2.3
2.3
3.0
3.0
V
DS D
= V , I = 250 mA
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 mA, referenced to 25°C
= 250 mA, referenced to 25°C
Q1
Q2
−
−
−5
−6
−
−
mV/°C
DVGS(th)
DTJ
D
I
R
DS(on)
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
= 10 V, I = 6 A
Q1
−
−
−
19
28
29
23.5
38
35.5
mW
D
= 4.5 V, I = 5 A
D
= 10 V, I = 6 A, T = 125°C
D
J
V
GS
V
GS
V
GS
= 10 V, I = 8 A
Q2
−
−
−
10
13
15
12
18
18
D
= 4.5 V, I = 7 A
D
= 10 V, I = 8 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DD
V
DD
= 5 V, I = 6 A
Q1
Q2
−
−
29
56
−
−
S
D
= 5 V, I = 8 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHZ
Q1
Q2
−
−
495
660
pF
pF
pF
iss
GS
1180
1570
C
oss
Output Capacitance
Q1
Q2
−
−
145
330
195
440
C
rss
Reverse Transfer Capacitance
Q1
Q2
−
−
20
30
30
45
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2
FDMC7200
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
DYNAMIC CHARACTERISTICS
Gate Resistance
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
R
g
f = 1 MHz
Q1
Q2
−
−
1.4
1.4
−
−
W
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Q1
Q1
Q2
−
−
11
13
20
23
ns
ns
ns
ns
nC
d(on)
V
DD
V
GS
= 15 V, I = 1 A,
D
= 10 V, R
= 6 W
GEN
t
r
Rise Time
Q1
Q2
−
−
3.1
4
10
10
Q2
V
DD
V
GS
= 15 V, I = 1 A,
D
t
Turn−Off Delay Time
Fall Time
Q1
Q2
−
−
35
38
56
60
= 10 V, R
= 6 W
d(off)
GEN
t
f
Q1
Q2
−
−
1.3
6
10
12
Q
Q
Total Gate Charge
V
GS
= 0 V to 10 V
Q1
Q2
−
−
7.3
16
10
22
g(TOT)
Q1:
V
DD
= 15 V, I = 6 A
D
Q2:
V
DD
= 15 V, I = 8 A
D
Total Gate Charge
V
GS
= 0 V to 4.5 V
Q1
Q2
−
−
3.1
7
4.3
10
nC
g(TOT)
Q1:
V
DD
= 15 V, I = 6 A
D
Q2:
DD
V
= 15 V, I = 8 A
D
Q
Q
Gate to Source Charge
Q1:
DD
Q1
Q2
−
−
1.8
4.1
−
−
nC
nC
gs
V
= 15 V, I = 6 A
D
Q2:
Gate to Drain “Miller” Charge
Q1
Q2
−
−
1
1.5
−
−
gd
V
DD
= 15 V, I = 8 A
D
DRAIN−SOURCE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
GS
V
GS
= 0 V, I = 6 A (Note 2)
Q1
Q2
−
−
0.8
0.8
1.2
1.2
V
S
= 0 V, I = 8 A (Note 2)
S
t
Reverse Recovery Time
Q1
F
Q2
Q1
Q2
−
−
13
21
24
34
ns
nC
rr
I = 6 A, di/dt = 100 A/mS
Q
Reverse Recovery Charge
Q1
Q2
−
−
2.3
5.6
10
12
rr
I = 8 A, di/dt = 100 A/mS
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a. 65°C/W when mounted on
b. 55°C/W when mounted on
2
2
a 1 in pad of 2 oz copper
a 1 in pad of 2 oz copper
c. 180°C/W when mounted on
a minimum pad of 2 oz copper
d. 145°C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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3
FDMC7200
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted)
J
40
30
20
10
0
4
V
V
= 10 V
= 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
GS
V
= 4.5 V
3
2
1
0
GS
V
GS
= 3.5 V
V
GS
= 4 V
V
= 4 V
GS
V
= 4.5 V
= 10 V
GS
V
GS
V
GS
= 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 3.5 V
1.0
GS
0.0
0.5
1.5
2.0
2.5
3.0
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
100
1.6
1.4
1.2
I
V
= 6 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
= 10 V
GS
80
60
40
20
0
I
D
= 6 A
T = 125°C
J
1.0
0.8
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to
Source Voltage
40
10
40
30
20
10
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 0 V
GS
V
DS
= 5 V
1
0.1
T = 150°C
J
T = 25°C
J
T = 150°C
J
T = 25°C
J
T = −55°C
J
0.01
0.001
T = −55°C
J
2.0
2.5
3.0
3.5
4.0
4.5
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC7200
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
10
8
1000
I
D
= 6 A
C
C
iss
V
DD
= 15 V
oss
6
V
DD
= 20 V
V
= 10 V
100
10
DD
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
0
2
4
6
8
0.1
1
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
10
25
R
= 7.5°C/W
q
JC
V
GS
= 10 V
20
15
10
5
100 ms
1 ms
10 ms
1
THIS AREA IS
LIMITED BY R
V
GS
= 4.5 V
100 ms
1 s
10 s
DC
DS(on)
0.1
SINGLE PULSE
T = MAX RATED
0.01
J
Limited by Package
50 75
R
= 180°C/W
q
JA
T = 25°C
A
0.001
0
25
0.01
0.1
1
10
100 200
100
125
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
c
Figure 9. Forward Bias Safe Operating Area
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
300
100
SINGLE PULSE
R
= 180°C/W
q
JA
T = 25°C
A
10
1
0.5
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDMC7200
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
DM
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t / t
0.01
SINGLE PULSE
= 180°C/W
1
2
R
q
JA
PEAK TJ = P
x Z
x R
+ T
JA A
q
q
DM
JA
0.003
10−4
10−3
10−2
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
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6
FDMC7200
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted)
J
6
40
30
20
V
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
5
4
3
2
1
0
V
GS
= 3 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
= 3.5 V
GS
V
= 4.5 V
= 10 V
GS
V
GS
= 4 V
10
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
V
GS
= 3 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
10
1.2
V
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 13. On−Region Characteristics
Figure 14. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0
I
V
= 8 A
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
GS
I
D
= 8 A
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 15. Normalized On Resistance vs.
Junction Temperature
Figure 16. On−Resistance vs. Gate to
Source Voltage
40
30
20
10
0
40
10
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 5 V
DS
1
0.1
T = 150°C
J
T = 25°C
J
T = 150°C
J
T = 25°C
J
0.01
0.001
T = −55°C
J
T = −55°C
J
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 17. Transfer Characteristics
Figure 18. Source to Drain Diode Forward
Voltage vs. Source Current
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7
FDMC7200
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
10
8
2000
C
iss
I
D
= 8 A
1000
100
10
C
oss
V
= 15 V
DD
6
V
DD
= 10 V
V
DD
= 20 V
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
0
3
6
9
12
15
18
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
30
Q , GATE CHARGE (nC)
V
g
Figure 19. Gate Charge Characteristics
Figure 20. Capacitance vs. Drain to Source
Voltage
100
10
50
40
30
20
10
0
R
= 4°C/W
q
JC
100 ms
V
= 10 V
GS
1 ms
10 ms
1
V
GS
= 4.5 V
THIS AREA IS
LIMITED BY R
100 ms
1 s
DS(on)
SINGLE PULSE
0.1
T = MAX RATED
J
10 s
DC
R
T
= 145°C/W
= 25°C
q
JA
Limited by Package
50 75
C
0.01
0.01
0.1
1
10
100200
25
100
125
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
c
Figure 21. Forward Bias Safe Operating Area
Figure 22. Maximum Continuous Drain
Current vs. Case Temperature
1000
100
10
SINGLE PULSE
V
GS
= 10 V
R
= 145°C/W
q
JA
T = 25°C
A
1
0.5
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 23. Single Pulse Maximum Power Dissipation
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8
FDMC7200
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
1
t
0.01
2
NOTES:
DUTY FACTOR: D = t / t
SINGLE PULSE
= 145°C/W
1
2
R
q
JA
PEAK T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
0.001
10−4
10−3
10−2
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 24. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3x3, 0.65P
CASE 511DE
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13621G
WDFN8 3X3, 0.65P
PAGE 1 OF 1
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相关型号：
FDMC7208S_12
Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ
FAIRCHILD
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