FDMC7208S [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，30V;
| 型号： | FDMC7208S |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，30V |
| 文件： | 总12页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual N-Channel,
POWERTRENCH)
Q1: 30 V, 12 A, 9.0 mW
Q2: 30 V, 16 A, 6.4 mW
FDMC7208S
General Description
This device includes two 30 V N−Channel MOSFETs in a dual
Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for
exceptional thermal performance.
Pin 1
G1 S1 S1 S1
Features
Q1: N−Channel
D1
D2
• Max r
• Max r
= 9.0 mꢀ at V = 10 V, I = 12 A
GS D
= 11.0 mꢀ at V = 4.5 V, I = 11 A
DS(on)
DS(on)
GS
D
Q2: N−Channel
• Max r
= 6.4 mꢀ at V = 10 V, I = 16 A
GS D
DS(on)
G2 S2 S2 S2
Power 33
• Max r
= 7.5 mꢀ at V = 4.5 V, I = 13.5 A
GS D
DS(on)
• This Device is Pb−Free and is RoHS Compliant
WDFN8 3x3, 0.65P
CASE 511DG
Applications
• Computing
• Communications
• General Purpose Point of Load
• Notebook System
MARKING DIAGRAM
$Y&Z&2&K
FDMC
7208S
$Y
= onsemi Logo
&Z
= Assembly Plant Code
&2
&K
= Numeric Date Code
= Lot Code
FDMC7208S
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
March, 2023 − Rev. 2
FDMC7208S/D
FDMC7208S
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Value
Q1
30
20
22
Q2
Symbol
Rating
Unit
V
V
V
Drain to Source Voltage
30
DS
Gate to Source Voltage (Note 4)
12
26
V
GS
I
D
Drain Current
Continuous (Package limited)
Continuous
T
= 25°C
A
C
T = 25°C
A
12 (Note 1a)
60
16 (Note 1b)
80
Pulsed
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation for Single Operation
21
21
mJ
W
AS
P
T = 25°C
1.9 (Note 1a)
0.8 (Note 1c)
1.9 (Note 1b)
0.8 (Note 1d)
D
A
T = 25°C
A
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Value
Q1
Q2
Symbol
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Ambient
Unit
65 (Note 1a)
65 (Note 1b)
°C/W
R
ꢁ
JA
R
155 (Note 1c) 155 (Note 1d)
ꢁ
JA
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Shipping
FDMC7208S
FDMC7208S
WDFN8 3x3, 0.65P, Power 33
3000 units / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
FDMC7208S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown
Voltage
I
I
= 250 ꢂ A, V = 0 V
Q1
Q2
30
30
−
−
−
−
V
mV/°C
ꢂ A
DSS
D
D
GS
= 1 mA, V = 0 V
GS
ꢃ BV
/
Breakdown Voltage Temperature
Coefficient
I
D
I
D
= 250 ꢂ A, referenced to 25°C
= 10 mA, referenced to 25°C
Q1
Q2
−
−
27
21
−
−
DSS
J
ꢃ T
I
Zero Gate Voltage Drain Current
V
= 24 V, V = 0 V
Q1
Q2
−
−
−
−
1
500
DSS
DS
GS
I
Gate to Source Leakage Current,
Forward
V
GS
V
GS
=
=
20 V, V = 0 V
Q1
Q2
−
−
−
−
100
100
nA
GSS
DS
12 V, V = 0 V
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold
Voltage
I
D
I
D
= 250 ꢂ A, V = 0 V
Q1
Q2
1.2
1.2
1.7
1.6
3.0
3.0
V
GS
= 1 mA, V = 0 V
GS
ꢃ
V
/
Gate to Source Threshold
I
I
= 250 ꢂ A, referenced to 25°C
= 1 mA, referenced to 25°C
Q1
Q2
−
−
−5
−3
−
−
mV/°C
mꢀ
GS(th)
J
D
D
Voltage Temperature Coefficient
ꢃ
T
R
Static Drain to Source
On Resistance
V
V
V
= 10 V, I = 12 A
Q1
−
−
−
6.7
8.8
9.2
9.0
11.0
12.4
DS(on)
GS
GS
GS
D
= 4.5 V, I = 11 A
D
= 10 V, I = 12 A, T = 125°C
D
J
V
GS
V
GS
V
GS
= 10 V, I = 16 A
Q2
−
−
4.7
5.3
6.4
6.4
7.5
6.8
D
= 4.5 V, I = 13.5 A
D
= 10 V, I = 16 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DD
V
DD
= 5 V, I = 12 A
Q1
Q2
−
−
53
80
−
−
S
D
= 5 V, I = 16 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1
DS
Q1
Q2
−
−
848
1130
2245
pF
pF
pF
ꢀ
iss
V
= 15 V, V = 0 V, f = 1 MHz
1685
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q1
Q2
−
−
270
432
360
575
Q2
oss
V
DS
= 15 V, V = 0 V, f = 1 MHz
GS
C
Q1
Q2
−
−
36
42
55
65
rss
R
Q1
Q2
0.1
0.1
1.1
1.0
2.5
2.5
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Q1
DD
Q1
Q2
−
−
6
7
12
14
ns
ns
ns
ns
nC
d(on)
V
= 15 V, I = 12 A, R
= 6 ꢀ
= 6 ꢀ
D
GEN
t
r
Rise Time
Q1
Q2
−
−
2
3
10
10
Q2
V
DD
= 15 V, I = 16 A, R
D
GEN
t
Turn−Off Delay Time
Fall Time
Q1
Q2
−
−
16
23
29
36
d(off)
t
f
Q1
Q2
−
−
2
2
10
10
Q
Total Gate Charge
V
V
= 0 V to 10 V
= 0 V to 5 V
Q1
Q1
Q2
−
−
13
26
18
36
g(TOT)
GS
V
= 15 V,
= 15 V
DD
D
I
= 12 A
Q1
Q2
−
−
6.7
14
9.4
20
nC
nC
nC
Q2
GS
V
D
DD
I
= 16 A
Q
Q
Gate to Source Charge
Q1
Q1
Q2
−
−
2.3
3.9
−
−
gs
V
D
= 15 V,
= 15 V
DD
I
= 12 A
Gate to Drain “Miller” Charge
Q1
Q2
−
−
1.8
2.7
−
−
Q2
gd
V
D
DD
I
= 16 A
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3
FDMC7208S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
V
SD
Source−Drain Diode Forward
Voltage
V
GS
V
GS
V
GS
V
GS
= 0 V, I = 2 A (Note 2)
Q1
Q1
Q2
Q2
−
−
−
−
0.72
0.82
0.70
0.82
1.2
1.2
1.2
1.2
V
S
= 0 V, I = 12 A (Note 2)
S
= 0 V, I = 2 A (Note 2)
S
= 0 V, I = 16 A (Note 2)
S
t
rr
Reverse Recovery Time
Q1
F
Q1
Q2
−
−
21
21
34
33
ns
I = 12 A, di/dt = 100 A/ꢂ s
Q
Reverse Recovery Charge
Q1
Q2
−
−
6
16
12
28
nC
Q2
F
rr
I = 16 A, di/dt = 300 A/ꢂ s
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
ꢁ
ꢁ
JA
by design while R
is determined by the user’s board design.
ꢁ
CA
a) 65°C/W when mounted o
b) 65°C/W when mounted on
2
2
a 1 in pad of 2 oz coppe
a 1 in pad of 2 oz copper.
c) 155°C/W when mounted on
d) 155°C/W when mounted on
a minimum pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ꢂ s, Duty cycle < 2.0%.
3. Q1: E of 21 mJ is based on starting T = 25°C, L = 0.3 mH, I = 12 A, V = 27 V, V = 10 V. 100% test at L = 3 mH, I = 5.2 A.
AS
AS
J
J
AS
AS
DD
DD
GS
GS
AS
AS
Q2: E of 21 mJ is based on starting T = 25°C, L = 0.3 mH, I = 12 A, V = 27 V, V = 10 V. 100% test at L = 3 mH, I = 5.4 A.
4. As an N−ch device, the negative V rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
GS
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4
FDMC7208S
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)
(T = 25°C unless otherwise noted)
J
60
50
40
30
5
4
V
GS = 10 V
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
VGS = 3 V
V
GS = 4.5 V
VGS = 3.5 V
VGS = 4 V
VGS = 3.5 V
3
2
VGS = 4 V
VGS = 3 V
20
1
0
10
0
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
VGS = 10 V
V
GS = 4.5 V
0
1
2
3
4
5
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance
vs Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
40
30
ID = 12 A
VGS = 10 V
PULSE DURATION = 80ꢂ s
DUTY CYCLE = 0.5% MAX
ID = 12 A
20
10
0
TJ = 125 o
C
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs Gate to
vs Junction Temperature
Source Voltage
60
100
10
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
VGS = 0 V
50
40
VDS = 5 V
TJ = 150 o
C
TJ = 150 o
C
1
30
20
10
0
T
J = 25 oC
T
J = 25 o
TJ = −55oC
C
0.1
0.01
TJ = −55oC
0.001
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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5
FDMC7208S
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (continued)
(T = 25°C unless otherwise noted)
J
10
8
2000
1000
ID = 12 A
Ciss
VDD = 15 V
Coss
6
VDD = 10 V
100
4
VDD = 20 V
Crss
f = 1 MHz
VGS = 0 V
2
10
0.1
0
0
5
10
15
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
30
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
40
10
100
10
1
TJ = 25oC
1 ms
THIS AREA IS
LIMITED BY r
10 ms
DS(on)
TJ = 100 o
C
SINGLE PULSE
TJ = MAX RATED
100 ms
1 s
TJ = 125 o
C
0.1
R
ꢁ JA = 155oC/W
A = 25oC
10 s
DC
DERIVED FROM
TEST DATA
T
1
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Forward Bias Safe
Operating Area
100
SINGLE PULSE
R
ꢁ JA = 155 oC/W
TA = 25 o
C
10
1
0.5
10−3
10−2
10−1
1
10
100
1000
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
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6
FDMC7208S
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
ꢁ JA = 155 o
NOTES:
DUTY FACTOR: D = t /t
1
2
R
C/W
PEAK T = P x Z
x R + T
C
J
DM
ꢁ JC
ꢁ Jc
0.01
(Note 1b)
0.005
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
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7
FDMC7208S
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)
(T = 25°C unless otherwise noted)
J
80
60
40
5
4
VGS = 10 V
GS = 4.5 V
VGS = 3 V
V
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
VGS = 4 V
V
GS = 3.5 V
3
VGS = 3 V
VGS = 3.5 V
2
1
20
0
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 4 V
VGS = 4.5 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 13. On−Region Characteristics
Figure 14. Normalized On−Resistance
vs Drain Current and Gate Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
30
24
18
ID= 16 A
VGS = 10 V
PULSE DURATION = 80ꢂ s
DUTY CYCLE = 0.5% MAX
ID = 16 A
12
6
TJ = 125 o
C
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 15. Normalized On−Resistance
Figure 16. On−Resistance vs Gate to
vs Junction Temperature
Source Voltage
80
64
48
32
16
0
100
10
VGS = 0 V
PULSE DURATION = 80ꢂ s
DUTY CYCLE = 0.5% MAX
TJ = 125 o
C
VDS = 5 V
1
0.1
TJ = 125 o
C
T
J = 25 oC
TJ = −55oC
TJ = 25 o
C
0.01
TJ = −55oC
0.001
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 17. Transfer Characteristics
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
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FDMC7208S
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (continued)
(T = 25°C unless otherwise noted)
J
10
8
3000
1000
ID = 16 A
Ciss
VDD = 15 V
6
Coss
VDD = 10 V
VDD = 20 V
100
4
2
Crss
f = 1 MHz
VGS = 0 V
10
0.1
0
0
6
12
18
24
30
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
30
Q , GATE CHARGE (nC)
V
g
Figure 19. Gate Charge Characteristics
Figure 20. Capacitance vs Drain
to Source Voltage
40
10
100
10
TJ = 25oC
1 ms
1
0.1
THIS AREA IS
LIMITED BY r
10 ms
TJ = 100 o
C
DS(on)
TJ = 125 o
C
100 ms
1 s
SINGLE PULSE
TJ = MAX RATED
ꢁ JA = 155oC/W
DERIVED FROM
TEST DATA
R
10 s
DC
T
A = 25oC
1
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 21. Unclamped Inductive
Switching Capability
Figure 22. Forward Bias Safe
Operating Area
100
10
SINGLE PULSE
R
ꢁ JA = 155 oC/W
A = 25 o
T
C
1
0.5
10−3
10−2
10−1
1
10
100
1000
t, PULSE WIDTH (s)
Figure 23. Single Pulse Maximum Power Dissipation
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FDMC7208S
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
ꢁ JA = 155 oC/W
(Note 1b)
NOTES:
DUTY FACTOR: D = t /t
1
2
R
PEAK T = P x Z
x R
+ T
J
DM
ꢁ JC
ꢁ JC C
0.01
0.005
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 24. Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3x3, 0.65P
CASE 511DG
ISSUE A
DATE 12 FEB 2019
GENERIC
MARKING DIAGRAM*
XXXX
AYWWG
G
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13623G
WDFN8 3x3, 0.65P
PAGE 1 OF 1
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相关型号：
FDMC7208S_12
Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ
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