FDMC7570S [ONSEMI]
N 沟道 Power Trench® SyncFET™ 25V，40A，2mΩ;
| 型号： | FDMC7570S |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 Power Trench® SyncFET™ 25V，40A，2mΩ |
| 文件： | 总8页 (文件大小：478K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDMC7570S
MOSFET – N-Channel,
POWERTRENCH),
SyncFETt
25 V, 40 A, 2 mW
www.onsemi.com
General Description
The FDMC7570S has been designed to minimize losses in power
conversion application. Advancements in both silicon and package
Pin 1
technologies have been combined to offer the lowest R
while
DS(on)
maintaining excellent switching performance. This device has the
added benefit of an efficient monolithic Schottky body diode.
Features
Power 33
PQFN8
CASE 483AK
• Max R
• Max R
= 2 mW at V = 10 V, I = 27 A
GS D
DS(on)
= 2.9 mW at V = 4.5 V, I = 21.5 A
DS(on)
GS
D
• Advanced Package and Combination for Low R
Efficiency
and High
DS(on)
PIN ASSIGNMENT
• SyncFET Schottky Body Diode
• 100% UIL Tested
D
5
4
G
• These Devices are Pb−Free and are RoHS Compliant
D
D
6
7
3
2
S
S
Applications
• Synchronous Rectifier for DC/DC Converters
• Notebook Vcore/GPU Low Side Switch
• Networking Point of Load Low Side Switch
• Telecom Secondary Side Rectification
D
8
1
S
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Parameter
Drain to Source Voltage
Symbol
Rating
Unit
V
V
DS
V
GS
25
20
&Y&Z&3&K
FDMC
Gate to Source Voltage (Note 4)
V
7570S
I
D
A
Drain Current
− Continuous (Package limited) T = 25°C
40
132
27
C
− Continuous (Silicon limited) T = 25°C
C
− Continuous T = 25°C (Note 1a)
A
− Pulsed
120
&Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data Code
Single Pulse Avalanche Energy (Note 3)
E
AS
144
59
mJ
W
P
D
Power Dissipation
T = 25°C
C
= 2−Digit Lot Traceability Code
FDMC7570S
= Specific Device Code
Power Dissipation T = 25°C (Note 1a)
2.3
A
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
STG
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
FDMC7570S
PGFN8
3,000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
June, 2019 − Rev. 3
FDMC7570S/D
FDMC7570S
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
°C/W
Thermal Resistance, Junction to Case
RθJC
RθJA
2.1
53
Thermal Resistance, Junction to Ambient (Note 1a)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTIC
Test Conditions
Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
I
I
= 1 mA, V = 0 V
BVDSS
25
V
D
GS
= 10 mA, referenced to 25°C
21
mV/°C
DBVDSS
DTJ
/
Breakdown Voltage Temperature /
Coefficient
D
mA
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ON CHARACTERISTICS
V
V
= 20 V, V = 0 V
IDSS
IGSS
500
100
DS
GS
= 20 V, V = 0 V
nA
GS
DS
Gate to Source Threshold Voltage
V
I
= V , I = 1 mA
VGS(th)
1.2
1.7
3
V
GS
DS
D
Gate to Source Threshold Voltage Temperature
Coefficient
= 10 mA, referenced to 25°C
−4
mV/°C
DVGS(th) /
DTJ
D
Static Drain to Source On Resistance
RDS(on)
mW
V
V
V
V
= 10 V, I = 27 A
1.6
2.4
2.2
154
2
GS
GS
GS
DS
D
= 4.5 V, I = 21.5 A
2.9
2.8
D
= 10 V, I = 27 A, T = 125°C
D
J
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
= 5 V, I = 27 A
gFS
S
D
V
DS
= 13 V, V = 0 V, f = 1 MHz
Ciss
Coss
Crss
Rg
3315
1010
168
4410
1345
255
pF
pF
pF
W
GS
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.2
2.1
SWITCHING CHARACTERISTICS
Turn−On Delay Time
V
= 13 V, I = 27 A, V = 10 V,
GEN
td(on)
tr
14
6.8
34
26
14
55
10
68
31
ns
ns
DD
R
D
GS
= 6 W
Rise Time
Turn−Off Delay Time
td(off)
tf
ns
Fall Time
4.5
49
ns
Total Gate Charge
V
V
I
= 0 V to 10 V, V = 13 V
Qg
nC
nC
nC
nC
GS
DD
Total Gate Charge
= 0 V to 4.5 V, V = 13 V
Qg
22
GS
DD
= 27 A
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
DRAIN−SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Forward Voltage
Qgs
Qgd
10.8
5.5
D
VSD
V
V
V
= 0 V, I = 27 A (Note 2)
0.78
0.43
30
1.2
0.8
48
GS
S
= 0 V, I = 2 A (Note 2)
GS
S
I = 27 A, di/dt = 300 A/ms
F
Reverse Recovery Time
trr
ns
Reverse Recovery Charge
Qrr
29
46
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
FDMC7570S
NOTES:
1. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
CA
a) 53°C/W when mounted on
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 144 mJ is based on starting T = 25°C, L = 1 mH, I = 17 A, V = 23 V, V = 10 V. 100% test at L = 0.3 mH, I = 25 A.
AS
J
AS
DD
GS
AS
4. As an N−ch device, the negative Vgs rating is for lower duty cycle pulse occurrence only. No continuous rating is implied.
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3
FDMC7570S
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
120
90
60
30
0
6
10 V
=
4.5 V
=
3.3 V
=
VGS
VGS
VGS
VGS = 2.7 V
3 V
=
VGS
5
4
3
2
1
0
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
3 V
=
VGS
VGS = 3.3 V
V
GS = 2.7 V
VGS = 4.5 V
10 V
=
VGS
90
0
1
V
2
3
4
5
0
30
60
, DRAIN CURRENT (A)
120
, DRAIN TO SOURCE VOLTAGE (V)
ID
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
10
PULSE DURATION = 80ms
ID = 27 A
ID = 27 A
DUTY CYCLE = 0.5% MAX
VGS = 10 V
8
6
4
TJ = 125 o
C
2
0
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
, GATE TO SOURCE VOLTAGE (V)
VGS
Figure 3. Normalized On−Resistance vs. Junction
Figure 4. On−Resistance vs. Gate to Source
Temperature
Voltage
120
200
100
VGS = 0 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
90
10
VDS = 5 V
TJ = 125 o
C
TJ = 125 o
C
60
30
0
1
T
J = 25oC
TJ = 25 o
C
0.1
0.01
TJ = −55oC
TJ = −55 o
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
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4
FDMC7570S
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
5000
1000
IDSS = 27 A
Ciss
VDD = 13 V
6
Coss
VDD = 10 V
VDD = 16 V
4
2
100
Crss
f = 1 MHz
= 0 V
VGS
0
50
0.1
30
0
10
20
30
40
50
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
135
50
10
VGS = 10 V
TJ = 25 oC
90
45
0
TJ = 100 o
C
VGS = 4.5 V
TJ = 125 o
C
R
qJC = 2.1 oC/W
Limited by Package
1
25
50
75
100
125
150
0.01
0.1
1
10
100
500
, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
TC
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
200
2000
100
1000
100
10
SINGLE PULSE
qJA = 125 oC/W
VGS = 10 V
100ms
R
TA = 25 o
C
10
1
1ms
10 ms
THIS AREA IS
LIMITED BY R
100 ms
DS(on)
SINGLE PULSE
1 s
TJ = MAX RATED
0.1
0.01
qJA = 125 o
10 s
DC
R
C/W
= 25 o
TA
C
1
0.5
10−4
10−3
10−2
t, PULSE WIDTH (sec)
10−1
1
10
0.01
0.1
1
10
100
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMC7570S
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
SINGLE PULSE
qJA = 125 oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
R
PEAK T = P x Z
x R
+ T
qJA A
J
DM
qJA
0.001
0.0005
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
SyncFET SCHOTTKY BODY DIODE CHARACTERISTICS
ON Semiconductor’s SyncFET process embeds
a Schottky diode in parallel with POWERTRENCH
MOSFET. This diode exhibits similar characteristics to a
discrete external Schottky diode in parallel with a MOSFET.
Figure 14 shows the reverses recovery characteristic of the
FDMC7570S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
10−2
30
25
20
TJ = 125 o
C
C
10−3
10−4
10−5
10−6
TJ = 100 o
15
di/dt = 300 A/ms
10
5
TJ = 25 o
C
0
−5
0
50
100
150
200
0
5
10
15
TIME (ns)
V
DS, REVERSE VOLTAGE (V)
Figure 14. FDMC7570S SyncFET Body Diode
Reverse Recovery Characteristic
Figure 15. SyncFET Body Diode Reverse Leakage
vs. Drain−Source Voltage
POWERTRENCH is a registered trademark and SyncFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the
United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 3.3X3.3, 0.65P
CASE 483AK
ISSUE B
DATE 12 OCT 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13660G
PQFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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