FDMC8010DC [ONSEMI]
N 沟道 Dual CoolTM 33 PowerTrench® MOSFET 30V，157A，1.28mΩ;
| 型号： | FDMC8010DC |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 Dual CoolTM 33 PowerTrench® MOSFET 30V，157A，1.28mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：426K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
DUAL COOLꢀ 33,
POWERTRENCHꢀ
30 V, 157 A, 1.28 mW
D
D
D
D
G
S
S
S
Pin 1
Top
Bottom
PQFN8 3.3X3.3, 0.65P
FDMC8010DC
CASE 483AY
DUAL COOL 33
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process. Advancements in both silicon and DUAL
COOL package technologies have been combined to offer the lowest
MARKING DIAGRAM
r
while maintaining excellent switching performance by
DS(on)
extremely low Junction−to−Ambient thermal resistance.
&Z&3&K
8010
Features
• DUAL COOL Top Side Cooling PQFN Package
• Max r
• Max r
= 1.28 mW at V = 10 V, I = 37 A
GS D
DS(on)
= 1.74 mW at V = 4.5 V, I = 32 A
DS(on)
GS
D
• High Performance Technology for Extremely Low r
DS(on)
&Z
= Assembly Plant Code
• These Devices are Pb−Free and are RoHS Compliant
&3
&K
= Numeric Date Code
= Lot Code
Applications
8010
= Specific Device Code
• Load Switch
• Motor Bridge Switch
• Synchronous Rectifier
PIN CONNECTIONS
S
D
D
D
D
MOSFET MAXIMUM RATINGS (T = 25°C Unless Otherwise Noted)
A
Symbol
VDS
Parameter
Drain to Source Voltage
Ratings Units
S
S
G
30
20
V
V
A
VGS
Gate to Source Volage (Note 4)
Drain Current
ID
−Continuous
−Continuous
−Continuous
−Pulsed
TC = 25°C (Note 6)
157
99
TC = 100°C (Note 6)
TA = 25°C (Note 1a)
(Note 5)
37
788
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
EAS
PD
Single Pulse Avalance Energy (Note 3)
337
50
mJ
W
Power Dissipation TC = 25°C
Power Dissipation TA = 25°C (Note 1a)
3.0
TJ, TSTG Operating and Storage Junction Temperature
Range
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
2.5
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
42
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2022 − Rev. 3
FDMC8010DC/D
FDMC8010DC
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
DUAL COOL 33
Reel Size
Tape Width
Quantity
FDMC8010DC
8010
13”
12 mm
3000 Units
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
V
DSS
D
GS
DBV
/DT Breakdown Voltage Temperature
= 250 mA, referenced to 25°C
15
mV/°C
DSS
J
D
Coefficient
mA
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
10
DSS
DS
GS
I
= 20 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
1.4
3.0
V
GS(th)
GS
DS
D
DV
/DT Gate to Source Threshold Voltage
= 250 mA, referenced to 25°C
−5
mV/°C
GS(th)
J
D
Temperature Coefficient
r
Static Drain to Source On Resistance
mW
V
V
V
V
= 10 V, I = 37 A
0.91
1.2
1.28
1.74
1.89
DS(on)
GS
D
= 4.5 V, I = 32 A
GS
GS
DS
D
= 10 V, I = 37 A, T = 125°C
1.34
231
D
J
g
FS
Forward Transconductance
= 5 V, I = 37 A
S
D
DYNAMIC CHARACTERISTICS
V
= 15 V, V = 0 V,
C
Input Capacitance
4720
1540
136
7080
2310
205
pF
pF
pF
W
DS
GS
iss
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.1
0.5
1.1
g
SWITCHING CHARACTERISTICS
V
= 15 V, I = 37 A, V = 10 V,
D GS
GEN
t
Turn−On Delay Time
Rise Time
15
7
26
14
64
10
94
44
ns
ns
DD
d(on)
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
40
5
ns
d(off)
t
f
ns
V
DD
= 15 V
Q
Q
Total Gate Charge at 10 V
Total Gate Charge at 4.5 V
Total Gate Charge
Gate to Drain “Miller” Charge
67
32
10
7.5
nC
nC
nC
nC
g(TOT)
ID = 37 A
g(TOT)
Qgs
Qgd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage V = 0 V, I = 2.3 A (Note 2)
V
0.7
0.8
55
1.2
1.3
88
SD
GS
S
V
GS
= 0 V, I = 37 A (Note 2)
S
t
I = 37 A, di/dt = 100 A/ms
F
Reverse Recovery Time
ns
rr
Q
Reverse Recovery Charge
48
76
nC
rr
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2
FDMC8010DC
THERMAL CHARACTERISTICS
°C/W
RθJC
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
(Top Source)
(Bottom Drain)
(Note 1a)
5.0
2.5
42
Thermal Resistance, Junction to Ambient
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
105
29
40
19
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1f)
(Note 1g)
(Note 1h)
23
30
79
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1i)
(Note 1j)
(Note 1k)
17
26
12
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
16
NOTES:
1. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
θ
θ
JC
JA
by design while R
is determined by the user’s board design.
θ
CA
b. 105°C/W when mounted on
a minimum pad of 2 oz copper
a. 42°C/W when mounted on
2
a 1 in pad of 2 oz copper
2
c. Still air, 20.9x10.4x12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper.
d. Still air, 20.9x10.4x12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper.
2
e. Still air, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper.
f. Still air, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper.
2
g. 200FPM Airflow, No Heat Sink,1 in pad of 2 oz copper.
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper.
i. 200FPM Airflow, 20.9x10.4x12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper.
2
j. 200FPM Airflow, 20.9x10.4x12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper.
k. 200FPM Airflow, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper.
2
l. 200FPM Airflow, 45.2x41.4x11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 337 mJ is based on starting T = 25°C, L = 3 mH, I = 15 A, V = 30 V, V = 10 V, 100% test at L = 0.1 mH, I = 49 A.
AS
J
AS
DD
GS
AS
4. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
5. Pulse Id measured at 250 ms, refer to Figure 11 SOA graph for more details.
6. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
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3
FDMC8010DC
TYPICAL CHARACTERISTICS
T = 25°C Unless Otherwise Noted
J
240
180
120
60
10
8
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS = 2.5 V
V
GS = 10 V
VGS = 4.5 V
6
V
VGS = 3.5
VGS = 3 V
V
GS = 3 V
4
2
0
VGS = 2.5 V
VGS = 4.5 V
VGS = 3.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
0
0.0
0.5
1.0
1.5
2.0
0
60
120
180 240
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs Drain
Current and Gate Voltage
1.6
8
ID = 37 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGS = 10 V
6
ID = 37 A
4
T
= 125°C
= 25°C
J
2
0
T
J
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs
Junction Temperature
Figure 4. On−Resistance vs Gate to Source
Voltage
240
180
120
60
240
100
VGS = 0 V
VDS = 5 V
10
T
= 150°C
J
T
= 150°C
J
T
= 25°C
1
J
T
= 25°C
J
0.1
T
= −55°C
J
T
= −55°C
J
0.01
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
0.001
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
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4
FDMC8010DC
TYPICAL CHARACTERISTICS (continued)
T = 25°C Unless Otherwise Noted
J
10
8
10000
1000
ID = 37 A
Ciss
VDD = 15 V
Coss
6
VDD = 20 V
VDD = 10 V
4
100
10
Crss
2
f = 1 MHz
V
GS = 0 V
0
0
14
28
42
56
70
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
30
Q , GATE CHARGE (nC)
g
V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source
Voltage
180
100
144
108
72
36
0
VGS = 10 V
VGS = 4.5 V
T
= 25°C
J
10
T
= 100°C
J
T
= 125°C
J
R
= 2.5°C/W
q
JC
1
0.001 0.01
0.1
1
10
100
1000
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10000
1000
100
2000
SINGLE PULSE
1000
100
10
R
= 2.5°C/W
q
JC
T
= 25°C
C
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1 ms
1
10 ms
100 ms
R
= 2.5°C/W
q
JC
CURVE BENT TO
MEASURED DATA
T
= 25°C
C
10
0.1
0.1
10−5
10−4
10−3
10−2
10−1
1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMC8010DC
TYPICAL CHARACTERISTICS (continued)
T = 25°C Unless Otherwise Noted
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
(t) = r(t) x R
qJC
qJC
SINGLE PULSE
R
= 2.5°C/W
J
q
JC
Peak T = P
x Z
(t) + T
qJC C
DM
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction to Case Transient Thermal Response Curve
POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 3.3X3.3, 0.65P
CASE 483AY
ISSUE A
DATE 08 SEP 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13674G
PQFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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