FDMC8015L [ONSEMI]
N 沟道，Power Trench® MOSFET，40V，18A，26mΩ;
| 型号： | FDMC8015L |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，40V，18A，26mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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October 2013
FDMC8015L
N-Channel Power Trench® MOSFET
40 V, 18 A, 26 mΩ
Features
General Description
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 7 A
Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
RoHS Compliant
Applications
Load Switch
Motor Bridge Switch
Bottom
D D
Top
7
D
D
8
2
6
5
G
S
S
S
D
D
D
D
5
6
7
8
4
3
2
1
G S
S
S
1
3
4
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25°C
C = 25°C
18
T
22
ID
A
TA = 25°C
(Note 1a)
(Note 3)
7
-Pulsed
30
EAS
Single Pulse Avalanche Energy
Power Dissipation
32
24
mJ
W
TC = 25°C
TA = 25°C
PD
Power Dissipation
(Note 1a)
2.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to + 150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
5.1
53
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12 mm
Quantity
FDMC8015L
FDMC8015L
Power 33
3000 units
©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev.C1
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
40
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
36
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1
1.8
-6
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
GS = 10 V, ID = 7 A
mV/°C
V
19.7
24
26
36
39
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 6 A
mΩ
VGS = 10 V, ID = 7 A, TJ = 125 °C
VDD = 5 V, ID = 7 A
29
30
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
710
94
945
125
90
pF
pF
pF
Ω
VDS = 20 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
58
1.2
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6.3
1.9
18
13
10
33
10
19
10
ns
ns
VDD = 20 V, ID = 7 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
1.7
13.6
6.6
1.9
2.5
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
nC
nC
nC
nC
VDD = 20 V,
D = 7 A
I
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 7 A
(Note 2)
(Note 2)
0.84
0.76
18
1.2
1.1
33
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 2 A
trr
Reverse Recovery Time
ns
IF = 7 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
8.6
18
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θCA
θJA
θJC
the user's board design.
a.
53 °C/W when mounted on a
1 in pad of 2 oz copper
b.
125 °C/W when mounted on
a minimum pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C; N-ch: L = 1 mH, I = 8 A, V = 36 V, V = 10 V.
J
AS
DD
GS
©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C1
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
30
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
25
VGS = 4.5 V
VGS = 4 V
VGS = 3 V
20
VGS = 3.5 V
VGS = 3.5 V
15
VGS = 3 V
VGS = 4 V
10
5
VGS = 10 V
PULSE DURATION = 80 μs
VGS = 4.5 V
DUTY CYCLE = 0.5% MAX
0
0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
80
1.8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 7 A
ID = 7 A
GS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
V
60
40
20
0
TJ = 125 o
C
TJ = 25 o
C
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
30
100
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
25
20
15
10
5
10
1
VDS = 5 V
TJ = 150 o
C
TJ = 25 oC
TJ = 150 o
C
0.1
TJ = 25 o
C
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
0
1
1.5
2.0
2.5
3.0
3.5
4.0
0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C1
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
2000
1000
ID = 7 A
Ciss
8
VDD = 20 V
6
Coss
VDD = 15 V
VDD = 25 V
100
4
2
0
Crss
f = 1 MHz
= 0 V
V
GS
10
0.1
0
2
4
6
8
10
12
14
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
25
20
15
10
5
20
10
TJ = 25 oC
VGS = 10 V
Limited by Package
TJ = 100 oC
VGS = 4.5 V
TJ = 125 o
C
RθJC = 5.1 oC/W
0
25
1
0.01
0.1
1
10 20
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure10. Maximum Continuous Drain
Current vs Case Temperature
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
50
10
500
SINGLE PULSE
RθJA = 125 oC/W
100 us
1 ms
100
10
T
A = 25 oC
1
0.1
10 ms
THIS AREA IS
LIMITED BY r
100ms
DS(on)
SINGLE PULSE
TJ = MAX RATED
1 s
RθJA = 125 oC/W
10 s
DC
1
T
A = 25 oC
0.01
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
0.1
1
10
100
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C1
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
R
θJA = 125 oC/W
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C1
www.fairchildsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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