FDMC8097AC [ONSEMI]
双 N 和 P 沟道 PowerTrench® MOSFET 150V;
| 型号： | FDMC8097AC |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道 PowerTrench® MOSFET 150V |
| 文件： | 总12页 (文件大小：512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Dual,
N & P-Channel,
POWERTRENCH)
N−Channel
V
V
MAX
R
I
MAX
D
DS
DS(on)
150 V
155 mꢀ @ 10 V
212 mꢀ @ 6 V
2.4 A
P−Channel
N-Channel: 150 V, 2.4 A, 155 mW
P-Channel: -150 V, -0.9 A, 1200 mW
MAX
R
I MAX
D
DS
DS(on)
−150 V
1200 mꢀ @ −10 V
1400 mꢀ @ −6 V
−0.9 A
FDMC8097AC
Pin 1
G1
S1S1
D1
S1
General Description
These dual N and P−Channel enhancement mode Power MOSFETs
are produced using onsemi’s advanced POWERTRENCH process
that has been especially tailored to minimize on−state resistance
and yet maintain superior switching performance. Shrinking the area
needed for implementation of active clamp topology; enabling best
in class power density.
D
2
G2S2 S2 S2
Bottom
Top
WDFN8 3.3 y 3.3, 0.65P
(Power 33)
Features
CASE 511DG
Q1: N−Channel
MARKING DIAGRAM
• Max R
• Max R
= 155 mꢀ at V = 10 V, I = 2.4 A
GS D
DS(on)
= 212 mꢀ at V = 6 V, I = 2 A
DS(on)
Q2: P−Channel
GS
D
ZXYYKK
FDMC
8097AC
• Max R
= 1200 mꢀ at V = −10 V, I = −0.9 A
GS D
DS(on)
• Max R
= 1400 mꢀ at V = −6 V, I = −0.8 A
GS D
DS(on)
• Optimised for Active Clamp Forward Converters
• Pb−Free, Halide Free and RoHS Compliant
Z
XYY
KK
= Assembly Plant Code
Applications
= 3−Digit Date Code Format
= 2−Alphanumeric Lot Run Traceability
Code
• DC−DC Converter
• Active Clamp
FDMC8097AC= Specific Device Code
PIN ASSIGNMENT
G1
S1
G2
S2
S2
S2
S1
S1
ORDERING INFORMATION
†
Shipping
Device
Package
FDMC8097AC
WDFN8
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
April, 2023 − Rev. 2
FDMC8097AC/D
FDMC8097AC
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Q1
150
20
Q2
−150
25
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
I
D
Continuous (Note 5)
Continuous (Note 5)
Continuous
T
T
= 25°C
6.3
3.9
−2.0
−1.2
A
C
= 100°C
C
T = 25°C
A
2.4 (Note 1a) −0.9 (Note 1b)
Pulsed (Note 4)
33
24
−8.8
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation for Single Operation
6
mJ
W
AS
P
T = 25°C
1.9 (Note 1a)
0.8 (Note 1c)
14
1.9 (Note 1b)
0.8 (Note 1d)
10
D
A
T = 25°C
A
T
C
= 25°C
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Q1
Q2
Unit
65 (Note 1a)
65 (Note 1b)
°C/W
R
ꢁ
JA
R
155 (Note 1c) 155 (Note 1d)
8.9 12.5
ꢁ
JA
R
ꢁ
JC
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FDMC8097AC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown
Voltage
I
I
= 250 ꢂ A, V = 0 V
Q1
Q2
150
−
−
−
−
V
mV/°C
ꢂ A
DSS
D
D
GS
−150
= −250 ꢂ A, V = 0 V
GS
ꢃ
B
V
/
Breakdown Voltage Temperature
Coefficient
I
D
I
D
= 250 ꢂ A, referenced to 25°C
= −250 ꢂ A, referenced to 25°C
Q1
Q2
−
−
98
122
−
−
DSS
J
ꢃ
T
I
Zero Gate Voltage Drain Current
V
V
= 120 V, V = 0 V
Q1
Q2
−
−
−
−
1
−1
DSS
DS
DS
GS
= −120 V, V = 0 V
GS
I
Gate to Source Leakage Current
V
GS
V
GS
=
=
20 V, V = 0 V
Q1
Q2
−
−
−
−
100
100
nA
GSS
DS
25 V, V = 0 V
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold
Voltage
V
GS
V
GS
= V , I = 250 ꢂ A
Q1
Q2
2.0
−2.0
3.1
−3.0
4.0
−4.0
V
DS
D
= V , I = −250 ꢂ A
DS
D
ꢃ
V
/
Gate to Source Threshold
Voltage Temperature Coefficient
I
= 250 ꢂ A, referenced to 25°C
= −250 ꢂ A, referenced to 25°C
D
Q1
Q2
−
−
−9
−6
−
−
mV/°C
GS(th)
J
D
ꢃ T
I
R
Static Drain to Source
On Resistance
V
GS
V
GS
V
GS
= 10 V, I = 2.4 A
Q1
−
−
−
124
155
245
155
212
306
mꢀ
DS(on)
D
= 6 V, I = 2 A
D
= 10 V, I = 2.4 A, T = 125°C
D
J
V
GS
V
GS
V
GS
= −10 V, I = −0.9 A
Q2
−
−
930
1030
1682
1200
1400
2171
D
= −6 V, I = −0.8 A
D
= −10 V, I = −0.9 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DD
V
DD
= 10 V, I = 2.4 A
Q1
Q2
−
−
6.4
0.75
−
−
S
D
= −10 V, I = −0.9 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1
DS
Q1
Q2
−
−
279
162
395
230
pF
pF
pF
ꢀ
iss
V
= 75 V, V = 0 V, f = 1 MHz
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q1
Q2
−
−
26
13
40
25
Q2
oss
V
DS
= −75 V, V = 0 V, f = 1 MHz
GS
C
Q1
Q2
−
−
1.4
0.6
5
5
rss
R
Q1
Q2
0.1
0.1
0.6
3.3
1.5
8.3
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Q1
Q1
Q2
−
−
5.4
5.2
11
11
ns
ns
ns
ns
nC
d(on)
V
DD
V
GS
= 75 V, I = 2.4 A,
D
= 10 V, R
= 6 ꢀ
GEN
t
r
Rise Time
Q1
Q2
−
−
1.3
1.6
10
10
Q2
V
DD
V
GS
= −75 V, I = −0.9 A,
D
t
Turn−Off Delay Time
Fall Time
Q1
Q2
−
−
9.1
7.4
18
15
d(off)
= −10 V, R
= 6 ꢀ
GEN
t
f
Q1
Q2
−
−
2.2
6.3
10
13
Q
Total Gate Charge
V
GS
V
GS
= 0 V to 10 V
= 0 V to −10 V
Q1
Q1
Q2
−
−
4.4
2.8
6.2
4.0
g(TOT)
V
= 75 V,
= 2.4 A
DD
I
D
V
V
= 0 V to 6 V
Q1
Q2
−
−
2.9
1.8
4.1
2.6
nC
nC
nC
Q2
V
D
GS
GS
= 0 V to −6 V
= −75 V
DD
I
= −0.9 A
Q
Q
Gate to Source Charge
Q1
Q1
Q2
−
−
1.3
0.8
−
−
gs
V
D
= 75 V,
= 2.4 A
DD
I
Gate to Drain “Miller” Charge
Q1
Q2
−
−
1.0
0.7
−
−
Q2
gd
V
D
= −75 V
= −0.9 A
DD
I
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3
FDMC8097AC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
V
SD
Source−Drain Diode Forward
Voltage
V
GS
V
GS
= 0 V, I = 2.4 A (Note 2)
Q1
Q2
−
−
0.8
−0.9
1.3
−1.3
V
S
= 0 V, I = −0.9 A (Note 2)
S
t
Reverse Recovery Time
Q1
F
Q1
Q2
−
−
50
44
80
71
ns
nC
rr
I = 2.4 A, di/dt = 100 A/s
Q
Reverse Recovery Charge
Q1
Q2
−
−
43
68
69
109
rr
Q2
I = −0.9 A, di/dt = 100 A/s
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
ꢁ
ꢁ
JA
by design while R
is determined by the user’s board design.
ꢁ
CA
a) 65°C/W when mounted o
b) 65°C/W when mounted on
2
2
a 1 in pad of 2 oz coppe
a 1 in pad of 2 oz copper.
c) 155°C/W when mounted on
d) 155°C/W when mounted on
a minimum pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ꢂ s, Duty cycle < 2.0%.
3. Q1: E of 24 mJ is based on starting T = 25°C, L = 3 mH, I = 4 A, V = 150 V, V = 10 V. 100% test at L = 0.1 mH, I = 14 A.
AS
AS
J
AS
AS
DD
DD
GS
GS
AS
Q2: E of 6 mJ is based on starting T = 25°C, L = 3 mH, I = −2 A, V = −150 V, V = −10 V. 100% test at L = 0.1 mH, I = −8 A.
J
AS
4. Q1: Pulsed Id please refer to Fig 11 SOA graph for more details.
Q2: Pulsed Id please refer to Fig 24 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
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4
FDMC8097AC
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)
(T = 25°C unless otherwise noted)
J
10
8
4
3
2
V
GS
= 10 V
V
V
= 6 V
GS
V
= 4.5 V
GS
= 5.5 V
V
GS
= 5 V
GS
6
4
2
V
GS
= 5.5 V
V
GS
= 6 V
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
V
GS
= 5 V
1
0
V
GS
= 10 V
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
0
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.5
2.0
500
400
300
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
I
V
= 2.4 A
D
= 10 V
GS
I
D
= 2.4 A
T = 125°C
J
1.5
1.0
0.5
200
100
0
T = 25°C
J
10
25 50
75 100 125 150
4
5
6
8
9
−75 −50 −25
0
7
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
20
10
10
8
V
GS
= 0 V
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
T = 150°C
J
V
DS
= 5 V
1
6
T = 25°C
J
0.1
4
T = 150°C
J
T = 25°C
J
T = −55°C
J
0.01
2
0
T = −55°C
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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FDMC8097AC
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (continued)
(T = 25°C unless otherwise noted)
J
10
8
1000
I
D
= 2.4 A
V
DD
= 50 V
C
iss
100
C
oss
V
= 75 V
DD
6
4
2
0
V
= 100 V
DD
10
1
C
rss
f = 1 MHz
= 0 V
V
GS
0
1
2
3
4
5
0.1
10
, Drain to Source Voltage (V)
100
1
Q , Gate Charge (nC)
V
DS
g
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
8
6
4
20
10
R
= 8.9°C/W
ꢁ
JC
T = 25°C
J
V
GS
= 10 V
T = 100°C
J
V
GS
= 6 V
T = 125°C
J
2
0
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
t , Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
10000
1000
100
SINGLE PULSE
R
= 8.9°C/W
ꢁ
JC
T
C
= 25°C
10
1
10 ꢂ s
100 ꢂ s
THIS AREA IS
LIMITED BY R
DS(on)
1 ms
SINGLE PULSE
T = MAX RATED
0.1
0.01
10 ms
DC
J
R
T
= 8.9°C/W
= 25°C
CURVE BENT TO
MEASURED DATA
ꢁ
JC
C
10
10
−5
−4
−3
−2
−1
0.1
10
10
10
10
10
1
1
1000
100
V
DS
, Drain to Source Voltage (V)
t, Pulse Width (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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FDMC8097AC
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.05
t
1
0.02
0.01
t
2
NOTES:
0.01
Z
R
(t) = r(t) × R
= 8.9°C/W
ꢁ
ꢁ
JC
JC
ꢁ
JC
SINGLE PULSE
Peak T = P
× Z (t) + T
ꢁ
JC C
J
DM
Duty Cycle, D = t / t
1
2
0.001
−5
−4
−3
−2
−1
1
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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FDMC8097AC
TYPICAL CHARACTERISTICS (Q2 P−CHANNEL)
(T = 25°C unless otherwise noted)
J
4
3
2
1
0
1.8
1.6
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
V
= −10 V
GS
V
GS
= −5 V
V
= −7 V
GS
V
GS
= −5.5 V
V
= −6 V
GS
V
= −5.5 V
= −5 V
GS
1.4
1.2
1.0
0.8
V
GS
V
GS
= −10 V
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
V
GS
= −7 V
V
GS
= −6 V
0
1
2
3
4
5
0
1
2
3
4
−V , Drain to Source Voltage (V)
DS
−I , Drain Current (A)
D
Figure 15. Normalized On−Resistance
Figure 14. On−Region Characteristics
vs. Drain Current and Gate Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
3000
2500
2000
I
V
= −0.9 A
= −10 V
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
D
GS
I
D
= −0.9 A
T = 125°C
J
1500
1000
T = 25°C
J
10
25 50
75 100 125 150
4
5
6
8
9
−75 −50 −25
0
7
T , Junction Temperature (5C)
J
−V , Gate to Source Voltage (V)
GS
Figure 16. Normalized On−Resistance
Figure 17. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
5
1
4
3
V
GS
= 0 V
PULSE DURATION = 80 ꢂ s
DUTY CYCLE = 0.5% MAX
V
DS
= −5 V
T = 150°C
J
T = 25°C
J
0.1
0.01
2
1
0
T = 150°C
J
T = −55°C
J
T = 25°C
J
T = −55°C
J
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−V , Body Diode Forward Voltage (V)
SD
−V , Gate to Source Voltage (V)
GS
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode Forward
Voltage vs. Source Current
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FDMC8097AC
TYPICAL CHARACTERISTICS (Q2 P−CHANNEL) (continued)
(T = 25°C unless otherwise noted)
J
10
8
1000
100
I
D
= −0.9 A
C
V
DD
= −50 V
iss
V
= −75 V
DD
C
oss
6
4
2
0
10
1
V
= −100 V
DD
C
rss
f = 1 MHz
= 0 V
V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
−V , Drain to Source Voltage (V)
100
1
Q , Gate Charge (nC)
g
DS
Figure 21. Capacitance vs. Drain to Source
Voltage
Figure 20. Gate Charge Characteristics
20
10
2.5
2.0
T = 25°C
J
1.5
1.0
0.5
0.0
V
= −10 V
GS
T = 100°C
J
V
GS
= −6 V
T = 125°C
J
R
= 12.5°C/W
ꢁ
JC
1
0.001
1
0.01
0.1
25
50
75
100
125
150
t , Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 22. Unclamped Inductive Switching
Capability
Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
20
10
500
100
SINGLE PULSE
R
= 12.5°C/W
ꢁ
JC
T
C
= 25°C
100 ꢂ s
1
0.1
THIS AREA IS
LIMITED BY R
1 ms
DS(on)
10
1
SINGLE PULSE
10 ms
DC
T = MAX RATED
J
R
T
= 12.5°C/W
= 25°C
CURVE BENT TO
MEASURED DATA
ꢁ
JC
C
0.01
−4
−3
−2
−1
1
10
10
10
10
10
1
100
500
−V , Drain to Source Voltage (V)
DS
t, Pulse Width (s)
Figure 24. Forward Bias Safe Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
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FDMC8097AC
TYPICAL CHARACTERISTICS (Q2 P−CHANNEL) (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
P
DM
0.02
0.01
t
1
t
2
0.1
NOTES:
(t) = r(t) × R
SINGLE PULSE
Z
ꢁ
ꢁ
JC
JC
R
= 12.5°C/W
ꢁ
JC
Peak T = P
× Z (t) + T
ꢁ
JC C
J
DM
Duty Cycle, D = t / t
1
2
0.01
−4
−3
−2
−1
1
10
10
10
t, Rectangular Pulse Duration (s)
10
Figure 26. Junction−to−Case Transient Thermal Response Curve
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3x3, 0.65P
CASE 511DG
ISSUE A
DATE 12 FEB 2019
GENERIC
MARKING DIAGRAM*
XXXX
AYWWG
G
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13623G
WDFN8 3x3, 0.65P
PAGE 1 OF 1
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相关型号：
FDMC8321L
Power Field-Effect Transistor, 22A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA, ROHS COMPLIANT, POWER 33, 8 PIN
FAIRCHILD
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