FDMC86260 [ONSEMI]
N 沟道，Power Trench® MOSFET，150V，25A，34mΩ;
| 型号： | FDMC86260 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，150V，25A，34mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：542K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
Shielded Gate,
POWERTRENCH)
V
R
MAX
I MAX
D
DS
DS(ON)
150 V
34 mW @ 10 V
44 mW @ 6 V
25 A
150 V, 25 A, 34 mW
Pin 1
Pin 1
S
S
S
G
FDMC86260
General Description
This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized for the on−state
resistance and yet maintain superior switching performance.
D
D
D
D
Top
Bottom
WDFN8 3.3 y 3.3, 0.65P
CASE 483AW
Features
D
S
8
1
2
3
• Shielded Gate MOSFET Technology
• Max R
• Max R
• High Performance Technology for Extremely Low R
• 100% UIL Tested
• Pb−Free, Halide Free and RoHS Compliant
= 34 mW at V = 10 V, I = 5.4 A
S
S
7
6
D
D
DS(on)
GS
D
= 44 mW at V = 6 V, I = 4.8 A
DS(on)
GS
D
DS(on)
G
4
5
D
N-CHANNEL MOSFET
MARKING DIAGRAM
Applications
• DC−DC Conversion
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
ZXYYKK
FDMC
86260
Symbol
Parameter
Drain to Source Voltage
Value
Unit
V
V
DS
150
20
V
Gate to Source Voltage
Drain Current:
V
GS
I
A
D
Continuous, T = 25°C (Note 5)
25
16
5.4
135
C
Z
XYY
KK
= Assembly Plant Code
Continuous, T = 100°C (Note 5)
C
= 3−Digit Date Code Format
= 2−Alphanumeric Lot Run Traceability
Code
Continuous, T = 25°C (Note 1a)
A
Pulsed (Note 4)
E
AS
Single Pulse Avalanche Energy (Note 3)
121
mJ
W
FDMC86260 = Specific Device Code
P
D
Power Dissipation:
T
= 25°C
54
2.3
C
T = 25°C (Note 1a)
ORDERING INFORMATION
A
T , T
Operating and Storage Junction
Temperature Range
−55 to
+150
°C
J
STG
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FDMC86260
WDFN8
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction to Case (Note 1)
2.3
°C/W
q
JC
R
Thermal Resistance,
Junction to Ambient (Note 1a)
53
°C/W
q
JA
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
February, 2023 − Rev. 2
FDMC86260/D
FDMC86260
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
150
−
−
−
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
110
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120 V, V = 0 V
−
−
−
−
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2
2.7
4
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−9
−
mV/°C
GS(th)
J
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DD
= 10 V, I = 5.4 A
−
−
−
−
27
31
55
19
34
44
69
−
mW
DS(on)
D
= 6 V, I = 4.8 A
D
= 10 V, I = 5.4 A, T = 125°C
D
J
g
FS
= 10 V, I = 5.4 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 75 V, V = 0 V, f = 1 MHz
−
−
1000
105
4.8
1330
140
10
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
0.6
1.8
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 75 V, I = 5.4 A, V = 10 V,
GEN
−
−
−
−
−
9.5
2
19
10
30
10
21
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
17
3.3
15
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to 10 V, V = 75 V,
DD
= 5.4 A
g(TOT)
GS
I
D
V
D
= 0 V to 6 V, V = 75 V,
−
9.7
14
nC
GS
DD
I
= 5.4 A
Q
Q
Gate to Source Charge
V
DD
V
DD
= 75 V, I = 5.4 A
−
−
4.0
3.1
−
−
nC
nC
gs
D
Gate to Drain “Miller” Charge
= 75 V, I = 5.4 A
D
gd
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2
FDMC86260
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 5.4 A (Note 2)
−
−
−
−
0.77
0.72
64
1.3
1.2
V
SD
GS
S
= 0 V, I = 1.9 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 5.4 A, di/dt = 100 A/ms
F
102
137
ns
rr
Q
Reverse Recovery Charge
85
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a) 53°C/W when mounted on
b) 125°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 121 mJ is based on starting T = 25°C, L = 3 mH, I = 9 A, V = 150 V, V = 10 V. 100% test at L = 0.1 mH, I = 22 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical
application board design.
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3
FDMC86260
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
48
36
24
4
V
V
= 10 V
= 6 V
GS
V
GS
= 5.5 V
V
GS
= 4.5 V
GS
V
GS
= 5 V
3
2
V
GS
= 5.5 V
V
GS
= 5 V
V
GS
= 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
12
0
1
0
V
= 4.5 V
V
= 10 V
GS
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
0
12
24
I , Drain Current (A)
36
48
V
, Drain to Source Voltage (V)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.8
2.4
120
90
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 5.4 A
= 10 V
D
I
D
= 5.4 A
GS
2.0
1.6
T = 125°C
J
60
1.2
0.8
0.4
30
0
T = 25°C
J
10
25 50
75 100 125 150
3
4
5
6
7
8
9
−75 −50 −25
0
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
100
10
1
48
36
24
12
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
DS
= 5 V
T = 25°C
J
T = 150°C
J
0.1
T = 150°C
J
T = 25°C
J
T = −55°C
J
0.01
T = −55°C
J
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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4
FDMC86260
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
2000
1000
I
D
= 5.4 A
C
iss
V
DD
= 50 V
V
DD
= 75 V
100
6
4
2
0
C
C
oss
V
= 100 V
DD
10
1
rss
f = 1 MHz
= 0 V
V
GS
0
4
8
Q , Gate Charge (nC)
12
16
0.1
10
, Drain to Source Voltage (V)
DS
100
1
V
g
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
30
20
10
25
20
15
T = 25°C
J
V
GS
= 10 V
T = 100°C
J
V
GS
= 6 V
10
5
T = 125°C
J
R
= 2.3°C/W
q
JC
0
1
0.001
0.1
1
10 20
25
50
75
100
125
150
t , Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
200
100
2000
1000
SINGLE PULSE
R
= 125°C/W
q
JA
T = 25°C
A
10
100
10
100 ms
1
1 ms
10 ms
100 ms
THIS AREA IS
LIMITED BY r
0.1
0.01
DS(on)
SINGLE PULSE
1 s
10 s
DC
T = MAX RATED
J
R
= 125°C/W
CURVE BENT TO
ACTUAL DATA
q
JA
1
T = 25°C
A
0.001
0.5
−4
−3
−2
−1
10
0.01
10
1
10
10
10
1
10
100 1000
0.1
100
800
V
DS
, Drain to Source Voltage (V)
t, Pulse Width (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMC86260
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
0.01
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
Peak T = P
× Z
× R
+ T
JA A
q
q
J
DM
JA
0.001
R
= 125°C/W
q
JA
0.0005
−4
−3
−2
−1
1
1000
10
10
10
10
100
10
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3X3.3, 0.65P
CASE 483AW
ISSUE A
DATE 10 SEP 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
XXXX
AYWW
WW = Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13672G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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