FDMC8882 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，16A，14.3mΩ;
| 型号： | FDMC8882 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，16A，14.3mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
Pin 1
8
S
S
S
G
7
6
30 V, 16 A, 14.3 mohm
5
1
D
D
2
FDMC8882
Description
D
3
D
4
Top
Bottom
This N−Channel MOSFET is produced using onsemi’s advanced
POWETRENCH process that has been especially tailored to minimize
the on−state resistance. This device is well suited for Power
Management and load switching applications common in Notebook
Computers and Portable Battery Packs.
WDFN8 3.3x3.3, 0.65P
CASE 511DR
Features
4
3
2
1
G
S
S
S
5
D
• Max R
• Max R
= 14.3 mW at V = 10 V, I = 10.5 A
GS D
DS(on)
D
D
D
6
7
8
= 22.5 mW at V = 4.5 V, I = 8.3 A
DS(on)
GS
D
• High Performance Technology for Extremely Low R
• Termination is Lead−Free
DS(on)
• RoHS Compliant
Applications
• High Side in DC−DC Buck Converters
• Notebook Battery Power Management
• Load Switch in Notebook
MARKING DIAGRAM
ZXYKK
FDMC
8882
Z
XY
KK
= Assembly Plant Code
= Date Code (Year &Week)
= Lot Traceability Code
= Specific Device Code
FDMC8882
ORDERING INFORMATION
†
Device
Package
Shipping
FDMC8882
WDFN8
3000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2023 − Rev. 4
FDMC8882/D
FDMC8882
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
30
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
20
V
I
D
Continuous (Package Limited)
Continuous (Silicon Limited)
Continuous
T
T
= 25°C
= 25°C
16
A
C
34
C
T = 25°C
10.5
A
A
(Note 1a)
Pulsed
−
40
18
P
D
Power Dissipation
Power Dissipation
T
C
= 25°C
W
T = 25°C
2.3
A
(Note 1a)
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 1a)
Ratings
6.6
Unit
°C/W
R
q
JC
R
53
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
Breakdown Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
25
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 24 V, V = 0 V
−
−
−
−
−
−
1
mA
DSS
GS
= 24 V, V = 0 V, T = 125 °C
250
100
GS
J
I
Gate−to−Source Leakage Current
=
20 V, V = 0 V
nA
GSS
DS
ON CHARACTERISTICS
V
Gate−to−Source Threshold Voltage
V
I
= V , I = 250 mA
1.2
1.9
2.5
V
GS(th)
GS
DS
D
Gate−to−Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−5
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain−to−Source
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 10.5 A
−
−
−
−
12.4
16.0
17.4
33
14.3
22.5
−
mW
DS(on)
D
On Resistance
= 4.5 V, I = 8.3 A
D
= 10 V, I = 10.5 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 10.5 A
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
710
140
90
945
185
135
−
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
1.0
g
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2
FDMC8882
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
t
t
Turn−On Delay Time
Rise Time
V
= 15 V, I = 10.5 A, V = 10 V,
GEN
−
−
−
−
−
−
−
−
7
3
14
10
30
10
20
10
−
ns
d(on)
DD
D
GS
R
= 6 W
t
r
Turn−Off Delay Time
Fall Time
17
2
d(off)
t
f
Q
Total Gate Charge
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain “Miller” Charge
V
GS
V
GS
V
DD
V
DD
= 0 V to 10 V, V = 15 V, I = 10.5 A
14
7
nC
g(tot)
DD
D
= 0 V to 4.5 V, V = 15 V, I = 10.5 A
DD
D
Q
= 15 V, I = 10.5 A
2.3
2.8
gs
D
Q
= 15 V, I = 10.5 A
−
gd
D
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source−to−Drain Diode Forward
V
V
= 0 V, I = 10.5 A (Note 2)
−
−
−
−
0.88
0.76
16
1.2
1.2
28
V
SD
GS
S
Voltage
= 0 V, I = 1.9 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 10.5 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
4.4
10
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a) 53°C/W when mounted on
b) 125°C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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3
FDMC8882
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
40
30
4.0
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
V
V
V
= 10 V
= 6 V
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
GS
V
GS
= 3 V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
GS
= 4.5 V
GS
V
GS
= 3.5 V
V
GS
= 3.5 V
V
= 4 V
GS
20
10
0
V
GS
= 4.5 V
V
= 4 V
GS
V
GS
= 3 V
V
GS
= 10 V
V
= 6 V
GS
0
1
2
3
4
0
10
20
Drain Current (A)
30
40
V
DS
, Drain to Source Voltage (V)
I
D,
Figure 2. Normalized On−Resistance vs.
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
50
40
30
1.6
I
V
= 10.5 A
D
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
= 10 V
GS
I
D
= 10.5 A
1.4
1.2
1.0
0.8
0.6
T = 125°C
J
20
10
T = 25°C
J
0
4
2
6
8
10
−75 −50 −25
0
25
50
75 100 125 150
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 4. On−Resistance vs.
Figure 3. Normalized On−Resistance vs.
Gate to Source Voltage
Junction Temperature
60
10
40
30
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
V
GS
= 0 V
V
DS
= 5 V
1
T = 25°C
J
T = 150°C
J
20
10
0
T = 150°C
J
0.1
T = 25°C
J
T = −55°C
0.01
J
T = −55°C
J
0.001
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
0.0
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
Figure 5. Transfer Characteristics
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4
FDMC8882
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
1000
10
8
I
D
= 10.5 A
V
DD
= 15 V
C
iss
V
DD
= 20 V
V
DD
= 10 V
6
4
C
oss
100
50
f = 1 MHz
= 0 V
2
0
C
rss
V
GS
1
10
0
3
12
15
6
9
0.1
30
V
DS
Drain to Source Voltage (V)
Q ,Gate Charge (nC)
g
Figure 8. Capacitance vs Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
40
30
20
10
T = 25°C
J
V
GS
= 10 V
T = 100°C
J
20
10
0
V
R
= 6 V
GS
Limited by
Package
T = 125°C
J
= 6.6 °C/W
q
JC
1
0.01
0.1
1
10
30
25
50
75
100
125
150
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
Figure 9. Unclamped Inductive
Switching Capability
50
10
1000
100
V
GS
= 10 V
100 ms
1 ms
1
0.1
10 ms
This Area is
100 ms
Limited by R
10
DS(ON)
Single Pulse
1 s
10 s
DC
Single Pulse
= 125°C/W
T = 25°C
A
T = Max Rated
J
R
θ
JA
R
= 125°C/W
θ
JA
1
T = 25°C
A
0.5
10
0.01
−4
−3
−2
−1
0.1
1
10
10
10
1
10
100
1000
0.01
10
100
V
DS
, Drain to Source Voltage (V)
t, Pulse Width (s)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe Operating Area
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5
FDMC8882
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
Notes:
t
2
Z
q
(t) = r(t) x R
q
JA
JA
0.01
R
= 125°C/W
θ
JA
Peak T = P
Duty Cycle: D = t /t
x Z (t) + T
q
JA A
J
DM
Single Pulse
1
2
0.001
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE B
DATE 02 FEB 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13650G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
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© Semiconductor Components Industries, LLC, 2018
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