FDMD8630 [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，30 V， 167 A，1.0 mΩ;
| 型号： | FDMD8630 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，30 V， 167 A，1.0 mΩ |
| 文件： | 总8页 (文件大小：411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDMD8630
MOSFET – N-Channel,
POWERTRENCH), Dual
30 V, 167 A, 1.0 mW
General Description
www.onsemi.com
This package integrates two N−Channel devices connected
internally in common−source configuration. This enables very low
package parasitics and optimized thermal path to the common source
pad on the bottom. Provides a very small footprint (5 x 6 mm) for
higher power density.
Top
Bottom
Pin 1
G1
D1
D1
D1
Features
S1 / S2
• Common Source Configuration to Eliminate PCB Routing
• Large Source Pad on Bottom of Package for Enhanced Thermals
D2
D2
D2
G2
• Max r
• Max r
= 1.0 mW at V = 10 V, I = 38 A
GS D
DS(on)
PQFN8 5X6, 1.27P
CASE 483AS
= 1.3 mW at V = 4.5 V, I = 33 A
DS(on)
GS
D
• Ideal for Flexible Layout in Secondary Side Synchronous
Rectification
• 100% UIL Tested
• This Device is Pb−Free and is RoHS Compliant
MARKING DIAGRAM
$Y&Z&3&K
FDMD
Applications
• Isolated DC−DC Synchronous Rectifiers
• Common Ground Load Switches
8630
&Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FDMD8630
= Specific Device Code
PIN CONFIGURATION
1
2
3
4
D2
D2
G1
D1
8
7
6
5
D2
G2
D1
D1
S1,S2to backside
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
July, 2019 − Rev. 2
FDMS3604S/D
FDMD8630
MOSFET MAXIMUM RATINGS T = 25°C Unless Otherwise Noted
A
Symbol
VDS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
V
A
VGS
20
ID
−Continuous − T = 25°C (Note 5)
167
106
C
−Continuous − T =100°C (Note 5)
C
−Continuous − T = 25°C (Note 1a)
38
A
1178
−Pulsed − (Note 4)
EAS
PD
Single Pulse Avalanche Energy (Note 3)
726
43
mJ
W
Power Dissipation for Single Operation T = 25 °C
Power Dissipation for Single Operation T = 25 °C (Note 1a)
C
2.3
A
TJ, TSTG
Operating and Storage Junction Temperature Range
−55 to +150
°C
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
2.9
Unit
RθJC
RθJA
Thermal Resistance, Junction to Case
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
55
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDMD8630
FDMD8630
Power 5 x 6
13”
12 mm
3000 Units
ELECTRICAL CHARACTERISTICS T = 25°C Unless Otherwise Noted
J
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
V
DSS
D
GS
DBV
/
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
15
mV/°C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
1
mA
DS
GS
I
Gate to Source Leakage Current,
Forward
= 20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
1.6
3.0
V
GS(th)
GS
DS
D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−6
mV/°C
GS(th)
DT
D
J
r
Static Drain to Source On Resistance
mW
V
V
V
V
= 10 V, I = 38 A
0.6
0.8
0.9
281
1.0
1.3
1.5
DS(on)
GS
D
= 4.5 V, I = 33 A
GS
GS
DD
D
= 4.5 V, I = 33 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 38 A
S
D
DYNAMIC CHARACTERISTICS
V
DS
= 15 V, V = 0 V, f = 1 MHz
GS
C
Input Capacitance
7090
2025
212
9930
2835
300
pF
pF
pF
W
iss
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.1
1.9
3.8
g
SWITCHING CHARACTERISTICS
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2
FDMD8630
ELECTRICAL CHARACTERISTICS T = 25°C Unless Otherwise Noted (continued)
J
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
SWITCHING CHARACTERISTICS
V
V
= 15 V, I = 38 A
D
t
t
Turn−On Delay Time
Rise Time
14
15
66
24
97
26
27
ns
ns
ns
ns
nC
DD
GS
d(on)
= 10 V, R
= 6 W
GEN
t
r
Turn−Off Delay Time
Fall Time
105
39
d(off)
t
f
V
I
= 15 V
Q
Q
Total Gate Charge
V
V
= 0 V to 10 V
= 0 V to 4.5 V
142
DD
D
g(TOT)
g(TOT)
GS
= 38 A
Total Gate Charge
46
74
nC
GS
Q
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
17
12
nC
nC
gs
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
V
Source to Drain Diode Forward Voltage
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 38 A (Note 2)
0.8
0.7
64
1.3
1.2
103
90
V
V
SD
SD
GS
S
= 0 V, I = 2 A (Note 2)
GS
S
I = 38 A, di/dt = 100 A/ms
F
t
ns
nC
rr
Q
Reverse Recovery Charge
56
rr
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JA
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
a. 55°C/W when mounted on
a1in2 padof 2oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 726 mJ is based on starting T = 25°C, L = 3 mH, I = 22 A, V = 30 V, V = 10 V. 100% tested at L = 0.1 mH, I = 70 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
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3
FDMD8630
TYPICAL CHARACTERISTICS
T = 25°C Unless Otherwise Noted
J
200
150
100
50
6
5
4
3
VGS = 10 V
GS = 4.5 V
PULSE DURATION = 80 ms
V
DUTY CYCLE = 0.5% MAX
V
GS = 4 V
VGS = 3 V
V
GS = 3.5 V
VGS = 3.5 V
VGS = 3 V
2
1
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
VGS = 4 V GS = 4.5 V VGS = 10 V
0
0.0
0
0.2
0.4
0.6
0.8
0
40
80
120
160
200
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 2. Normalized On−Resistance vs Drain
Figure 1. On−Region Characteristics
Current and Gate Voltage
1.6
10
ID = 38 A
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
8
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
GS = 10 V
ID = 38 A
6
4
2
0
TJ = 25 oC
TJ = 125 o
C
-75 -50 -25
0
25
50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On−Resistance vs Gate to Source
Voltage
200
200
160
120
80
100
ms
PULSE DURATION = 80
VGS = 0 V
DUTY CYCLE = 0.5% MAX
10
VDS = 5 V
TJ = 150oC
1
TJ = 25oC
TJ = 150o
C
0.1
TJ = 25oC
oC
40
0.01
T
J = -55
oC
T
J = -55
0
0.001
0
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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4
FDMD8630
TYPICAL CHARACTERISTICS
T = 25°C Unless Otherwise Noted (continued)
J
10
8
10000
1000
ID = 38 A
Ciss
VDD = 15 V
6
Coss
VDD = 10 V
VDD = 20 V
4
f = 1 MHz
VGS = 0 V
2
Crss
0
100
0.1
0
20
40
60
80
100
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 8. Capacitance vs Drain to Source Voltage
Figure 7. Gate Charge Characteristics
200
100
160
TJ = 25oC
VGS = 10 V
120
TJ = 100oC
10
80
40
0
V
VGS = 4.5
T
J = 125oC
= 2.9oC/W
50
R
q
JC
1
0.01
0.1
1
10
100
1000
25
75
100
125
150
T , CASE TEMPERATURE ( oC)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs Case Temperature
3000
1000
100000
SINGLE PULSE
= 2.9oC/W
R
q
JC
10ms
TC = 25oC
10000
1000
100
10
1
100
ms
THIS AREA IS
LIMITED BYrDS(on)
1 ms
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms
100
10
0.1
= 2.9oC/W
R
q
JC
CURVE BENT TO
MEASURED DATA
T
C = 25oC
0.01
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
0.01
0.1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMD8630
TYPICAL CHARACTERISTICS
T = 25°C Unless Otherwise Noted (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
PDM
0.1
0.1
0.01
0.05
0.02
0.01
t1
t2
NOTES:
Z
(t) = r(t) x R
qJC
qJC
RqJC = 2.9oC/W
Peak TJ = PDM x Z
SINGLE PULSE
(t) + T
qJC
C
Duty Cycle, D = t1 / t2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AS
ISSUE A
DATE 17 MAY 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13667G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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