FDMD8680 [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，60V，66A，4.7mΩ;
| 型号： | FDMD8680 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，60V，66A，4.7mΩ |
| 文件： | 总7页 (文件大小：411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DS
DS(on)
80 V
4.7 mW @ 10 V
6.4 mW @ 8 V
66 A
80 V, 66 A, 4.7 mW
Pin 1
G1
FDMD8680
D1
Pin 1
D1
D1
General Description
This package integrates two N−Channel devices connected
internally in common−source configuration. This enables very low
package parasitics and optimized thermal path to the common source
pad on the bottom. Provides a very small footprint (5 x 6 mm) for
higher power density.
D2
D2
D2
G2
Top
Bottom
PQFN8 5 y 6, 1.27P
(Power 5 y 6)
Features
CASE 483AS
• Common Source Configuration to Eliminate PCB Routing
• Large Source Pad on Bottom of Package for Enhanced Thermals
ELECTRICAL CONNECTION
• Max R
= 4.7 mW at V = 10 V, I = 16 A
GS D
DS(on)
Max R
= 6.4 mW at V = 8 V, I = 14 A
GS D
DS(on)
D2
G1
D1
1
2
8
7
• Ideal for Flexible Layout in Secondary Side Synchronous
Rectification
• 100% UIL Tested
• Pb−Free, Halide Free and RoHS Compliant
D2
D2
G2
D1
D1
3
4
6
5
Applications
S1, S2 to backside
• Isolated DC−DC Synchronous Rectifiers
• Common Ground Load Switches
N−Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
MARKING DIAGRAM
Symbol
Parameter
Drain to Source Voltage
Value
80
Unit
V
V
DS
V
GS
ZXYYKK
FDMD
8680
Gate to Source Voltage
20
V
I
D
Drain Current
A
– Continuous (Note 5)
– Continuous (Note 5)
– Continuous (Note 1a)
– Pulsed
T
T
A
= 25°C
66
42
16
487
C
C
= 100°C
T = 25°C
Z
X
YY
KK
= Assembly Plant Code
= Year Code
= Weekly Numeric Code
E
AS
Single Pulse Avalanche Energy
(Note 3)
337
mJ
W
P
D
Power Dissipation
Power Dissipation (Note 1a)
T
A
= 25°C
C
39
2.3
= Alphanumeric Character Lot Code
T = 25°C
FDMD8680 = Specific Device Code
T , T
Operating and Storage Junction
Temperature Range
–55 to
+150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
3.2
Unit
Thermal Resistance, Junction to Case
°C/W
R
q
JC
R
Thermal Resistance, Junction to Ambient
(Note 1a)
55
q
JA
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June, 2023 − Rev. 2
FDMD8680/D
FDMD8680
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
= 250 mA, V = 0 V
80
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
I = 250 mA, Referenced to 25_C
−
50
mV/_C
D
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 64 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = 250 mA
2.0
3.0
4.0
V
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
I = 250 mA, Referenced to 25_C
D
−
−10
−
mV/_C
DVGS(th)
DTJ
R
Static Drain to Source On–Resistance
V
GS
V
GS
V
GS
= 10 V, I = 16 A
−
−
−
3.3
3.9
5.6
4.7
6.4
8.0
mW
DS(on)
D
= 8 V, I = 14 A
D
= 10 V, I = 16 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DD
= 10 V, I = 16 A
−
49
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 40 V, V = 0 V, f = 1 MHz
−
−
3805
657
26
5330
920
77
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
1.7
3.4
g
SWITCHING CHARACTERISTICS
t
Turn–On Delay Time
Rise Time
V
V
= 40 V, I = 16 A,
−
−
−
−
−
−
−
20
18
30
10
53
17
10
32
32
48
20
73
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
Turn–Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
V
= 0 V to 10 V, V = 40 V, I = 16 A
nC
nC
nC
g(TOT)
GS
DD
D
Q
Q
= 40 V, I = 16 A
D
gs
DD
−
gd
DRAIN–SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 16 A (Note 2)
−
−
−
−
0.8
0.7
48
1.3
1.2
77
V
SD
GS
S
= 0 V, I = 2 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 16 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
39
62
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
a. 55°C/W when mounted on
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
3. E of 337 mJ is based on starting T = 25°C, L = 3 mH, I = 15 A, V = 80 V, V = 10 V. 100% tested at L = 0.1 mH, I = 49 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
www.onsemi.com
2
FDMD8680
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
10
200
150
100
50
V
= 10 V
GS
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 5.5 V
V
= 8 V
GS
8
6
4
2
0
V
GS
= 6 V
V
= 7 V
GS
V
V
= 6 V
GS
= 5.5 V
GS
V
GS
= 7 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 10 V
V
GS
= 8 V
0
0.0
100
I , Drain Current (A)
0
50
150
200
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, Drain to Source Voltage (V)
D
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
Figure 1. On Region Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= 16 A
D
= 10 V
GS
I
D
= 16 A
T = 125°C
J
T = 25°C
J
6
4
5
7
8
9
10
−75 −50 −25
0
25
50
75 100 125 150
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (5C)
J
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to
Source Voltage
200
100
200
150
100
50
V
GS
= 0 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
10
1
V
DS
= 5 V
T = 150°C
J
T = 25°C
J
T = 150°C
J
0.1
T = 25°C
J
T = −55°C
J
0.01
0.001
T = −55°C
J
0
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
5
6
7
8
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
FDMD8680
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
10000
1000
I
D
= 16 A
V
= 30 V
DD
C
C
iss
V
DD
= 40 V
oss
6
V
DD
= 50 V
100
10
1
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
0
20
Q , Gate Charge (nC)
10
30
40
50
60
0.1
1
10
80
V
, Drain to Source Voltage (V)
DS
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
80
60
40
20
0
100
10
V
= 10 V
GS
T = 100°C
J
T = 125°C
T = 25°C
J
J
V
= 8 V
GS
R
= 3.2°C/W
q
JC
1
25
50
75
100
125
150
0.001
0.01
0.1
10
100 500
1
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
1000
20000
10000
Single pulse
R
= 3.2°C/W
q
JC
T
= 25°C
C
100
10
1
10 ms
1000
100
10
This Area is
100 ms
Limited by R
DS(on)
Single Pulse
1 ms
10 ms
T = Max Rated
J
q
Curve Bent to
R
= 3.2°C/W
JC
100 ms
Measured Data
T
C
= 25°C
0.1
−5
−4
−3
−2
−1
0.1
1
10
100
300
10
10
10
10
10
1
t, Pulse Width (s)
V
DS
, Drain to Source Voltage (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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4
FDMD8680
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
q
(t) = r(t) x R
= 3.2°C/W
q
JC
JC
Single pulse
R
q
JC
Peak T = P
x Z (t) + T
q
JC C
J
DM
Duty Cycle: D = t /t
1
2
0.001
−5
−4
−3
−2
−1
10
10
10
10
10
1
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package Type
Reel Size
Tape Width
Shipping
FDMD8680
FDMD8680
PQFN8 5 x 6, 1.27P
(Power 5 x 6)
(Pb−Free/Halide Free)
13”
12 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AS
ISSUE A
DATE 17 MAY 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13667G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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