FDMQ8205A [ONSEMI]
GreenBridgeTM 2 系列高效桥式整流器;
| 型号： | FDMQ8205A |
| 厂家： | 
ONSEMI |
| 描述： | GreenBridgeTM 2 系列高效桥式整流器 |
| 文件： | 总11页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GreenBridget 2 Series of
High-Efficiency Bridge
Rectifiers
FDMQ8205A
General Description
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FDMQ8205A is GreenBridge 2 series of quad MOSFETs for a
bridge application so that the input will be insensitive to the polarity of
a power source coupled to the device. Many known bridge rectifier
circuits can be configured using typical diodes. The conventional
diode bridge has relatively high power loss that is undesirable in many
applications. Especially, Power over Ethernet (PoE) Power Device
(PD) application requires high−efficiency bridges because it should be
operated with the limited power delivered from Power Source
Equipment (PSE) which is classified by IEEE802.3at. FDMQ8205A
WDFN12 5x4.5, 0.8P
CASE 511CS
is configured with low r
dual P−ch MOSFETs and
DS(on)
MARKING DIAGRAM
N−ch MOSFETs so that it can reduce the power loss caused by the
voltage drop, compared to the conventional diode bridge.
FDMQ8205A enables the application to maximize the available
power and voltage and to eliminate the thermal design problems in
PoE PD applications.
$Y&Z&2&K
FDMQ
8205A
FDMQ8205A GreenBridge 2 is compatible with IEEE802.3at PoE
standard by not compromising detection and classification
requirement as well as small backfeed voltage.
FDMQ8205A = Specific Device Code
$Y
&Z
&2
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 2−Digit Data Code
Features
• Low Power Loss GreenBridge Replaces Diode Bridge
• Self Driving Circuitry for MOSFETs
= 2−Digits Lot Run Traceability Code
• Low r
100 V Rated MOSFETs
DS(on)
ORDERING INFORMATION
• Maximizing Available Power and Voltage
• Eliminating Thermal Design Problems
See detailed ordering and shipping information on page 9 of
this data sheet.
• IEEE802.3af/at and 3bt Compatible
♦ Meet Detection and Classification Requirement
♦ Work with 2 and 4−pair Architecture
♦ Small Backfeed Voltage
• Compact MLP 4.5x5 Package
• This is a Pb−Free Device
Applications
• Power over Ethernet (PoE) Power Device (PD)
• IP Phones
• Network Cameras
• Wireless Access Points
• Thin Clients
• Microcell
• Femtocell
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June, 2020 − Rev. 2
FDMQ8205A/D
FDMQ8205A
TYPICAL APPLICATION
RJ45
Connector
1
POUT
G3
G2
INPUT1
G1
FDMQ8205A
2
3
VOUTP
INPUT2
G4
VOUT+
Isolated
DC/DC
Converter
0.1 mF
22 mF
TVS
PoE PD
Interface
VOUT−
6
4
NOUT
VOUTN
POUT
5
7
G3
G2
INPUT1
G1
FDMQ8205A
INPUT2
G4
8
NOUT
Figure 1. Typical Application of Power Device for 2−Pair Architecture of IEEE802.3af/at Power over Ethernet
Standard
RJ45
Connector
POUT
1
G2
INPUT1
G1
G3
T1
T2
R1
FDMQ8205A
VOUTP
2
3
INPUT2
G4
GD1
VOUT+
Isolated
DC/DC
Converter
D1
PoE PD
Interface
VOUT−
GD1
6
4
NOUT
VOUTN
POUT
5
7
G2
INPUT1
G1
G3
T4
T3
FDMQ8205A
R2
INPUT2
G4
GD2
8
D2
GD2
NOUT
Figure 2. Typical Application of Power Device for IEEE802.3bt Power over Ethernet Standard
TYPICAL BOM OF GATE DRIVING CIRCUITS
Reference
Description
Part Name
T1, T2, T3, T4
D1, D2
NPN & PNP Transistors
BC846BPDW1T1
MMBZ27VALT1G
Dual Common Anode Zeners
R1, R2
162 kW Resistor
RC0603FR−07162KL
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2
FDMQ8205A
BLOCK DIAGRAM
OUTP
OUTP
Q2
Q3
Gate
Gate
G3
G2
driver
driver
Q4
Q1
Gate
Gate
G4
driver
driver
G1
OUTN
INPUT2
INPUT1
OUTN
Figure 3. Block Diagram
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3
FDMQ8205A
PIN CONFIGURATION
1
2
3
G1
G4
OUTN
OUTN
12
11
10
INPUT2
(16)
INPUT1
(13)
OUTN
OUTN
4
5
G2
G3
OUTP
OUTP
9
8
7
OUTP
INPUT2
(15)
INPUT1
(14)
6
OUTP
MLP 4.5x5
Figure 4. Pin Assignment (Bottom View)
PIN DESCRIPTION
Pin No.
Name
Description
1
4
G1
G2
Gate of Q1 N−ch MOSFET
Gate of Q2 P−ch MOSFET
Gate of Q3 P−ch MOSFET
Gate of Q4 N−ch MOSFET
Input1 of GreenBridge
9
G3
12
G4
13, 14
15, 16
2, 3, 11, 10
5, 6, 7, 8
INPUT1
INPUT2
OUTN
OUTP
Input2 of GreenBridge
Negative Output of GreenBridge
Positive Output of GreenBridge
1. Show the feature that provides orientation or pin 1 location.
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4
FDMQ8205A
ABSOLUTE MAXIMUM RATINGS
Min
−
Max
100
100
100
100
100
70
Unit
V
INPUT1, INPUT2 to OUTN
OUTP to INPUT1, INPUT2
INPUT1 to INPUT2
−
V
−
V
INPUT2 to INPUT1
−
V
OUTP to OUTN
−
V
G1, G2, G3, G4 to OUTN
OUTP to G1, G2, G3, G4
VG_TRANSIENT
−
V
−
70
V
Transient Gate Voltage, Pulse Width < 200 ms,
Duty Cycle < 0.003%
−
100
V
Continuous I
(GreenBridge Current,
T = 25°C (Note 2a)
−
−
−
−
−
−
3.0
1.7
58
A
A
INPUT
A
Q1 + Q3 or Q2 + Q4)
T = 25°C (Note 2b)
A
Pulsed I (Q1 + Q3 or Q2 + Q4)
Pulse Width < 300 ms, Duty Cycle < 2% (Note 3)
A
INPUT
P
D
(Power Dissipation, Q1 + Q3 or Q2 + Q4)
T = 25°C (Note 2a)
A
2.5
0.78
150
W
W
°C
T = 25°C (Note 2b)
A
Max Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2
2. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
2
a. 50°C/W when mounted on a 1 in pad of
2 oz copper, the board designed Q1 + Q3
or Q2 + Q4.
b. 160°C/W when mounted on a minimum
pad of 2 oz copper, the board designed
Q1 + Q3 or Q2 + Q4.
3. Pulse Id measured at td ≤ 300 ms, refer to SOA graph for more details.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Min
−
Typ
5.1
50
Max
−
Unit
°C/W
R
q
JC
R
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2b)
−
−
q
JA
R
−
160
−
q
JA
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5
FDMQ8205A
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Input Voltage of Bridge
Gate Voltage of MOSFETs
Input Current of Bridge
Conditions
Min
−
Max
57
Unit
V
V
INPUT
INPUT1 to INPUT2 or INPUT2 to INPUT1
G1, G4 to OUTN G2, G3 to OUTP
V
G
−
57
V
I
Bridge Current through Q2 and Q4 or (Q3 and Q1)
−
1.7
85
A
INPUT
Ambient Operation Temperature (T )
−40
−40
°C
°C
A
Junction Operating Temperature (T ) (Note 4)
125
J
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
4. Backfeed Voltage can not be guaranteed for junction temperature in excess of 85°C. See V in Electrical Characteristics Table.
BF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
−
Typ
−
Max
57
Unit
V
V
INPUT
Input Voltage of Bridge
Gate Voltage of MOSFETs
At INPUT1 to INPUT2 or INPUT2 to INPUT1
At G1, G4 to OUTN and G2, G3 to OUTP
V
G
−
−
57
V
I
Q
Quiescent Current
Detection Mode
−
−
−
−
−
−
5
mA
1.5 V < V
= V < 10.1 V (Note 5)
INPUT
G
Classification Mode
10.2 V < V = V < 23.9 V (Note 5)
400
3.2
mA
INPUT
G
Power On Mode
Maximum V
mA
= V = 57 V (Note 5)
INPUT
G
V
Turn−On Voltage of MOSFETs Turn−On of MOSFETs while V Increases (Note 4)
32
−
−
36
V
TURN_ON
G
I
Turn−Off Leakage Current
V
= 57 V, V
= 0 V T = −40°C to 85°C
−
700
mA
LEAKAGE
OUTP
OUTN
J
(Note 5)
V
BF
Backfeed Voltage
V
= 57 V, V
= 0 V, 100 kW between
−
−
2.7
V
OUTP
OUTN
INPUT1 and INPUT2
T = −40°C to 85°C (Note 5)
J
r
N−ch MOSFET
P−ch MOSFET
V
V
V
V
V
= 42 V, I
= 48 V, I
= 57 V, I
= 1.5 A, T = 25°C
−
−
−
−
−
35
29
26
95
83
76
51
44
mW
mW
mW
mW
mW
DS(on)
G
G
G
G
G
INPUT
INPUT
INPUT
A
= 1.5 A, T = 25°C
A
= 1.5 A, T = 25°C
37
A
= −42 V, I
= −48 V, I
= −1.5 A, T = 25°C
147
125
INPUT
A
= −1.5 A, T = 25°C
INPUT
INPUT
A
V
G
= −57 V, I
= −1.5 A, T = 25°C
−
107
mW
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. INPUT1 is connected to G3 and G4 and also INPUT2 is connected to G1 and G2 like below.
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6
FDMQ8205A
TYPICAL CHARACTERISTICS (Q1 OR Q4 N−CHANNEL)
(T = 25°C unless otherwise noted.)
J
2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
I
V
= 1.7 A
V
GS
= 0 V
D
10
1
= 57 V
GS
T = 150°C
J
T = 25°C
J
10−1
10−2
10−3
10−4
10−5
T = −55°C
J
−75 −50 −25
0
25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
T , JUNCTION TEMPERATURE (°C)
J
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Normalized On Resistance vs.
Junction Temperature
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
10−1
V
= 0 V
DS
10−2
10−3
10−4
10−5
10−6
10−7
10−8
10−9
T = 125°C
J
T = 25°C
J
0
10
20
30
40
50
60
70
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7. Gate Leakage Current vs.
Gate to Source Voltage
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7
FDMQ8205A
TYPICAL CHARACTERISTICS (Q2 OR Q3 P−CHANNEL)
(T = 25°C unless otherwise noted.)
J
2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
I
V
= −1.7 A
= −57 V
V
GS
= 0 V
D
10
GS
1
10−1
10−2
10−3
10−4
10−5
T = 150°C
J
T = 25°C
J
T = −55°C
J
−75 −50 −25
0
25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
T , JUNCTION TEMPERATURE (°C)
J
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 8. Normalized On Resistance vs.
Junction Temperature
Figure 9. Source to Drain Diode Forward Voltage
vs. Source Current
10−1
V
= 0 V
DS
10−2
10−3
10−4
10−5
10−6
10−7
10−8
10−9
T = 125°C
J
T = 25°C
J
0
10
20
30
40
50
60
70
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 10. Gate Leakage Current vs.
Gate to Source Voltage
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8
FDMQ8205A
TYPICAL CHARACTERISTICS (Q1 + Q3 OR Q2 + Q4 IN SERIAL)
(T = 25°C unless otherwise noted.)
J
2000
1000
100
10
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
100
1 ms
1
10 ms
10
100 ms
0.1
1 s
SINGLE PULSE
T = MAX RATED
SINGLE PULSE
R = 160°C/W
q
JA
T = 25°C
A
10 s
DC
1
J
0.01
0.001
R
= 160°C/W
q
JA
T = 25°C
A
0.1
10−4 10−3 10−2 10−1
1
10
t, PULSE WIDTH (sec)
10
103
2
0.01
0.1
1
10
100 400
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
2
DUTY CYCLE−DESCENDING ORDER
1
10−1
10−2
10−3
10−4
D = 0.5
0.2
P
0.1
DM
0.05
0.02
0.01
t1
t2
NOTES:
Z
q
(t) = r(t) x R
q
JA
= 160°C/W
SINGLE PULSE
JA
R
q
JA
DUTY FACTOR: D = t / t
T − T = P
1
(t)
2
x Z
q
J
A
DM
JA
10−4
10−3
10−2
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
PACKEGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Size
Tape Width
Shipping
FDMQ8205A
FDMQ8205A
WDFN12 5x4.5, 0.8P
MLP4.5x5
13”
12 mm
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
GreenBridge is trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN12 5x4.5, 0.8P
CASE 511CS
ISSUE O
DATE 31 AUG 2016
5.00
A
B
4.45
(0.40)
(0.25)
0.10 C
2.10(4X)
7
2X
12
1.00(4X)
(0.50)
3.50
4.50
PIN#1
IDENT AREA
4.80
(0.50)2X
0.10 C
1
0.80
(0.65)
6
TOP VIEW
2X
0.40
(12x)
RECOMMENDED LAND PATTERN
0.80 MAX
0.10 C
(0.20)
0.08 C
0.05
C
NOTES:
0.00
A. PACKAGE DOES NOT FULLY CONFORM TO
JEDEC MO−229 REGISTRATION
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.
SEATING
SIDE VIEW
PLANE
0.05
5.00
1.95
(4X)
(0.35)4X
(0.50)2X
1.85
1
6
PIN#1
IDENT
(0.50)2X
0.05
4.50
1.05
0.95
(4X)
0.55
0.45
0.10 C A B
0.05
C
7
12
0.80
2.40
0.35
0.25
(12X)
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13607G
WDFN12 5X4.5, 0.8P
PAGE 1 OF 1
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