FDMS0312S [ONSEMI]
N 沟道，PowerTrench® SyncFET™，30V，42A，4.9mΩ;
| 型号： | FDMS0312S |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® SyncFET™，30V，42A，4.9mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
SyncFETt – N-Channel,
V
MAX
r
MAX
I MAX
D
DS
DS(on)
POWERTRENCH)
30 V
4.9 mW @ 10 V
5.8 mW @ 4.5 V
42 A
30 V, 42 A, 4.9 mW
FDMS0312S
Pin 1
General Description
The FDMS0312S has been designed to minimize losses in power
conversion application. Advancements in both silicon and package
S
S
S
G
technologies have been combined to offer the lowest r
maintaining excellent switching performance. This device has the
added benefit of an efficient monolithic Schottky body diode.
while
DS(on)
D
D
D
D
Bottom
Top
Features
PQFN8 5X6, 1.27P
(Power 56)
CASE 483AE
• Max r
• Max r
= 4.9 mW at V = 10 V, I = 18 A
GS D
DS(on)
DS(on)
= 5.8 mW at V = 4.5 V, I = 14 A
GS
D
• Advanced Package and Silicon Combination for Low r
High Efficiency
and
DS(on)
MARKING DIAGRAM
• SyncFET Schottky Body Diode
• MSL1 Robust Package Design
&Z&3&K
FDMS
0312S
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digits Lot Run Code
• Synchronous Rectifier for DC/DC Converters
• Notebook Vcore/GPU Low Side Switch
• Networking Point of Load Low Side Switch
• Telecom Secondary Side Rectification
FDMS0312S = Specific Device Code
PIN CONNECTIONS
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
Symbol
Parameter
Drain to Source Voltage
Ratings
30
Unit
V
V
DS
V
GS
Gate to Source Voltage (Note 4)
20
V
I
D
Drain Current
A
− Continuous (Package Limited) T = 25°C
42
83
19
90
C
− Continuous (Silicon Limited) T = 25°C
C
− Continuous T = 25°C (Note 1a)
A
− Pulsed
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation
60
mJ
W
AS
P
D
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
T
= 25°C
46
2.5
C
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Ratings
2.7
Unit
°C/W
R
q
JC
Thermal Resistance, Junction to Case
R
q
JA
Thermal Resistance, Junction to Ambient
(Note 1a)
50
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
May, 2023 − Rev. 4
FDMS0312S/D
FDMS0312S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 1 mA, V = 0 V
30
−
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 10 mA, referenced to 25°C
18
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
−
−
−
−
500
100
mA
DSS
GSS
DS
GS
I
Gate to Source Leakage Current, Forward
= 20 V, V = 0 V
nA
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate to Source Threshold Voltage
V
I
= V , I = 1 mA
1.2
−
1.9
−5
3.0
−
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= 10 mA, referenced to 25°C
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 18 A
−
−
−
−
3.6
4.7
5
4.9
5.8
6.2
−
mW
DS(on)
D
= 4.5 V, I = 14 A
D
= 10 V, I = 18 A, T = 125°C
D
J
g
FS
= 5 V, I = 18 A
97
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
2120
735
90
2820
975
135
2.2
pF
pF
pF
W
iss
GS
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
1.1
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
R
= 15 V, I = 18 A, V = 10 V,
−
−
−
−
−
−
−
−
12
5
21
10
44
10
46
22
−
ns
ns
d(on)
DD
D
GS
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
28
4
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 15 V, I = 18 A
33
15
6.5
4.0
nC
nC
nC
nC
g
DD
D
= 0 V to 4.5 V, V = 15 V, I = 18 A
g
DD
D
Q
= 15 V, I = 18 A
D
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2 A (Note 2)
−
−
−
−
0.48
0.80
26
0.7
1.2
42
V
SD
GS
S
= 0 V, I = 18 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 18 A, di/dt = 300 A/ms
F
ns
rr
Q
Reverse Recovery Charge
26
42
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a. 50°C/W when mounted on a
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
2
1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 60 mJ is based on starting T = 25°C, L = 1 mH, I = 11 A, V = 27 V, V = 10 V. 100% test at L = 0.3 mH, I = 16 A.
AS
J
AS
DD
GS
AS
4. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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2
FDMS0312S
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
90
60
30
0
12
V
GS
= 3 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
10
8
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
V
GS
V
GS
= 10 V
= 4.5 V
= 4 V
V
GS
= 3.5 V
V
GS
= 3.5 V
6
V
GS
= 10 V
4
V
= 4 V
V
GS
= 4.5 V
GS
2
V
GS
= 3 V
0
0.0
0.5
1.0
1.5
2.0
0
30
60
90
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
12
10
8
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
V
= 18 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
I
D
= 18 A
= 10 V
GS
T = 125°C
J
6
4
T = 25°C
J
2
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs. Junction
Temperature
Figure 4. On−Resistance vs. Gate to Source Voltage
90
100
PULSE DURATION = 80 ms
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
10
1
V
DS
= 5 V
60
30
0
T = 125°C
J
T = 125°C
J
T = 25°C
J
0.1
T = 25°C
J
T = −55°C
J
0.01
T = −55°C
J
0.001
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs.
Source Current
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3
FDMS0312S
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED) (CONTINUED)
J
10
8
3000
1000
I
D
= 18 A
C
iss
V
= 20 V
DD
V
DD
= 10 V
6
C
oss
V
DD
= 15 V
4
2
100
50
f = 1 MHz
= 0 V
C
V
rss
GS
0
0
5
10
15
20
25
30
35
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V
DS
30
Q , GATE CHARGE (nC)
g
V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
90
60
30
10
T = 25°C
J
V
GS
= 10 V
T = 100°C
J
30
0
V
= 4.5 V
GS
Limited by Package
= 2.7°C/W
T = 125°C
J
R
q
JC
1
0.01
0.1
1
10
100
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (5C)
c
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
300
3000
V
= 10 V
GS
100
1000
100
10
100 ms
10
1 ms
10 ms
THIS AREA IS
LIMITED BY r
1
0.1
100 ms
1 s
DS(on)
SINGLE PULSE
T = MAX RATED
SINGLE PULSE
R = 125°C/W
q
JA
T = 25°C
A
10 s
DC
J
R
= 125°C/W
q
JA
1
T = 25°C
A
0.01
0.5
10−4 10−3 10−2 10−1
0.01
0.1
1
10
100200
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
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4
FDMS0312S
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED) (CONTINUED)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY CYCLE: D = t / t
0.001
SINGLE PULSE
= 125°C/W
1
2
R
PEAK T = P x Z
x R
q
+ T
JA A
q
q
JA
J
DM
JA
0.0001
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
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5
FDMS0312S
TYPICAL CHARACTERISTICS (CONTINUED)
SyncFET Schottky Body Diode Characteristics
onsemi’s SyncFET process embeds a Schottky diode in
parallel with POWERTRENCH MOSFET. This diode
exhibits similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 14 shows the
reverses recovery characteristic of the FDMS0312S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
10−2
20
15
T = 125°C
J
10−3
T = 100°C
J
di/dt = 300 A/ms
10
10−4
5
0
T = 25°C
J
10−5
10−6
−5
0
30
60
90
120
150
0
5
10
15
20
25
30
TIME (ns)
V
DS
, REVERSE VOLTAGE (V)
Figure 14. FDMS0312S SyncFET Body
Diode Reverse Recovery Characteristic
Figure 15. SyncFET Body Diode Reverses
Leakage vs. Drain−Source Voltage
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package Type
Reel Size
Tape Width
Shipping
FDMS0312S
FDMS0312S
PQFN8 5X6, 1.27P
(Power 56)
13”
12 mm
3000 / Tape & Reel
(Pb−Free, Halide Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SyncFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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For additional information, please contact your local Sales Representative at
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