FDMS039N08B_技术文档

DATA SHEET

www.onsemi.cn

MOSFET – N ṿᬣ,

POWERTRENCH⁾

V

R

MAX

I MAX

D

DSS

DS(on)

80 V

3.9 mW @ 10 V

100 A

80 V, 100 A, 3.9 mW

ჵ௪ 1

FDMS039N08B

S

G

ᛄꢀ

ꢀ ꢁN ꢂ ꢀ ꢁMOSFET ꢁ ꢂ ꢃ ꢄ ꢃ ꢁ(onsemi) ꢅ ꢄ ꢅ

POWERTRENCH ꢆꢆꢇꢇ，ꢈꢈꢅꢄꢆꢆꢉꢊꢋꢌꢍꢉꢎꢏꢊ

ꢐꢑꢋꢌꢍꢒꢓꢔꢕꢎꢖꢗꢘꢏꢐꢙꢚꢅ。

D

⍆

ၵ

⑙ꢁ

PQFN8 5X6, 1.27P

(Power 56)

CASE 483AE

•ꢛR

= 3.2 mW (ꢜꢝꢞ) @ V = 10 V，I = 50 A

GS D

DS(on)

•ꢛꢐ FOM R

* Q

G

DS(on)

•ꢛꢐꢟꢠꢡꢢꢌꢑ，Q = 80 nC

rr

•ꢛꢒꢟꢠꢡꢢꢣꢤꢥꢓ

•ꢛꢦꢧꢨꢔꢩꢪꢫꢬꢭ

•ꢛꢮꢕꢖꢗꢕꢎ

MARKING DIAGRAM

&Z&3&K

FDMS

039N08B

•ꢛ100% ꢖꢗ UIL ꢯꢘ

• This Device is Pb−Free, Halide Free and is RoHS Compliant

ꢂ✈

&Z

&3

&K

= Assembly Plant Code

= 3−Digit Date Code

= 2−Digits Lot Run Code

•ꢛꢂꢰ ATX / ꢱꢲꢳ / ꢌꢴ PSU ꢅꢪꢫꢬꢭ

•ꢛꢌꢵꢓꢶꢌꢙ

•ꢛꢌꢷꢚꢸꢹꢺꢛꢻꢌꢼ

FDMS039N08B = Specific Device Code

MOSFET ꢃꢄ⍭ꢅꢆ(T = 25°C, ꢀꢁꢀꢂꢃꢄ)

C

PIN ASSIGNMENT

ꢇꢈ

FDMS039N08B ꢇꢈ

V

ꢅꢆ－⁰ꢆꢇꢁ

᧥ꢆ－⁰ꢆꢇꢁ

ꢅꢆꢇἡ

80

20

V

A

DSS

D

5

6

7

8

4

3

2

1

G

S

GSS

I

D

-᪮ঽ (T = 25°C)

100

19.4

C

-᪮ঽ (T = 25°C) (ꢃꢄ 1a)

A

I

ꢅꢆꢇἡ

-௙ꢂ(ꢃꢄ 2)

mJ

DM

400

240

E

ꢃ௙ꢂ↺༉்Ჟ (ꢃꢄ 3)

ꢄ૧

mJ

W

AS

P

D

(T = 25°C)

A

104

2.5

C

(T = 25°C) (ꢃꢄ 1a)

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of

this data sheet.

T , T

࿅ꢅꢆസꢇꢈႆීꢈ

−55 ೃ +150

°C

J

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

(ꢉ૓ᚡᝧ)

ୢ᥼ꢇꢁᡕ᪗ᣠଇ⍭ൺꢊጸꢋꢌꢍŔꢊීꢈ，ꢎꢏꢐ்ꢑᔿꢒ。ୢ᥼ᡕ᪗Ûĵ

᪩{℠ꢊ，෦ៀẵƽᚑꢎꢏꢄ்，ꢐ்ꢑොೄꢎꢏᔿꢒ，ᅑ

ڭ

ꢐ∰ሇ。

⋍ꢁ் (T = 25°C, ꢀꢁꢀꢂꢃꢄ)

C

ꢇꢈ

ণೃ૶૓⋍ℋᣠଇꢊ

ণೃ▏੣⋍ℋᣠଇꢊ(ꢃꢄ 1a)

FDMS039N08B ꢇꢈ

R

q

JC

1.2

50

°C/W

R

q

JA

1

Publication Order Number:

May, 2023 − Rev. 4

FDMS039N08BCN/D

FDMS039N08B

ꢀᷴ⑙ꢁ(T = 25°C ꢀꢁꢀꢂꢃꢄ)

C

׶

ꢉ

ꢊꢋ

Ἣᚥ᥁ꢌ

ꢃꢍꢆ ꢎꢏꢆ ꢃꢄꢆ

ꢇꢈ

ꢐꢑ⑙ꢁ

BV

ꢅꢆ-⁰ꢆϛՏꢇꢁ

I

= 250 mA, V = 0 V

80

−

V

DSS

D

GS

DBV

/

ϛՏꢇꢁꢈႆ

ߋ

ᝐ

= 250 mA, ᖈภ᫙✈ 25°C

0.04

V/°C

DSS

D

DT

J

DSS

GSS

I

⇆᧥ꢆꢇꢁꢅꢆꢇἡ

᧥ꢆ-ĳꢅꢇἡ

V

= 64 V, V = 0 V

−

1

mA

DS

GS

I

=

20 V, V = 0 V

100

nA

GS

DS

ꢒ᫪⑙ꢁ

V

᧥ꢆ⃘ꢊꢇꢁ

V

GS

V

GS

V

DS

= V , I = 250 mA

2.5

−

4.5

3.9

−

V

mW

S

GS(th)

DS D

R

DS(on)

ꢅꢆೃ⁰ꢆ∩ᇡො᫪ꢇℋ

ᵃ

ױ

ᢸො

= 10 V, I = 50 A

3.2

100

D

g

FS

= 10 V, I = 50 A

−

D

ꢓꢔ⑙ꢁ

C

ᩣͅꢇ඙

V

= 40 V, V = 0 V

−

5715

881

15

7600

1170

−

pF

nC

W

iss

DS

GS

f = 1 MHz

C

oss

ᩣꢍꢇ඙

C

rss

֭

ױ

Āᩣꢇ඙

C

(er)

்Ჟǈ͓ᩣꢍꢇ඙

10 V Ŕ᧥ꢆꢇ็ማᲟ

᧥ꢆ-⁰ꢆ᧥ꢆꢇ็

᧥ꢆၓ

א

ꢇ็⃘ꢊ

᧥ꢆ-ꢅꢆ“݃Ҳ”ꢇ็

ؙᜨꢓତꢇℋ

V

= 40 V, V = 0 V

1646

77

−

oss

DS

GS

Q

g(tot)

= 40 V, I = 50 A V = 0 Vೃ 10 V

100

−

DS

D

GS

(ꢃꢄ 4)

Q

34

gs

Q

gs2

13

−

Q

16

−

gd

ESR

ꢕꢐ⑙ꢁ

f = 1 MHz

1.2

−

t

ො᫪ზ᪯៖⃄

რ᫪⛺ԧ៖⃄

͓ឍზ᪯៖⃄

͓ឍ⛻ℝ៖⃄

V

R

= 40 V, I = 50 A V = 10 V,

= 4.7 W (ꢃꢄ 4)

−

42

25

48

17

94

60

ns

d(on)

DD

D

GS

G

t

r

t

106

44

d(off)

t

f

⃯ᥡ-⁰ᥡꢖᥡ

ٱ

⑙ꢁ

I

ꢅꢆ-⁰ꢆlꢆ

ٱ

ᣠଇᵃ

ױ

᪮ঽꢇἡ

ꢅꢆ-⁰ꢆlꢆ

ٱ

ᣠଇᵃ

ױ

௙ꢂꢇἡ

ꢅꢆ-⁰ꢆlꢆ

ٱ

ᵃ

ױ

ꢇꢁ

֭

ױ

ቂ૭៖⃄

−

100

400

1.3

−

A

S

I

SM

V

SD

V

= 0 V, I = 50 A

−

V

GS

SD

t

rr

= 0 V, I = 50 A, V = 40 V

68

80

ns

nC

GS

SD

DD

dI /dt = 100 A/ms

F

Q

֭

ױ

ቂ૭ꢇ็

−

rr

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(ꢉ૓ᚡᝧ)

ꢀꢁꢀꢂꢃꢄ，“ꢇᷴ⑙ሇ”ጸ᨜ꢋꢌꢍŔ᠏ᐠꢌἫᚥ᥁ꢏ⛻Ŕ

ڡ

ሇ்ꢉᝐ。ୢ᥼ई⛽

׬

᥁ꢏ⛻᪠ጜ，

ڡ

ሇ்ꢐ்⛾“ꢇᷴ⑙ሇ”ጸ᨜

ꢋᐠꢌሇ்ꢉᝐ⛽⛰ೄ。

2

1. R

ֶΓn൩᎕ईFR-4 ᤰ៸ 1.5 x 1.5 in. ꢇᢿᥟ⛺1 in 2 ƞ

ט

⋪ƨ⛺Ŕꢎꢏ。R

᫪᪗ᚎᙱƽᚑ，૜ R

q

ֶΓn✈ᐗŔꢇᢿᥟᚎᙱ。

CA

q

JA

JC

a. 50°C/W，൩᎕n

ꢔ1 in pad of 2 ƞ

ט

⋪ƨ。

b. 125°C/W，൩᎕n

ꢔᣠ෯บෘŔ 2 ƞ

ט

⋪ƨ。

2

2. Ო૭⍭ൺꢊ：௙ꢂꢉႆַ℠nᣠଇণꢈ。

3. L = 0.3 mH， I = 40 A，რꢊ T = 25°C。

4. ꢋ៸⛺ꢌꢍn࿅ꢅꢈႆŔ͘५⑙ሇ。

AS

J

www.onsemi.cn

2

FDMS039N08B

ꢎꢏꢁ்⑙ꢗ

400

100

400

100

*NOTES:

1. V = 10 V

DS

2. 250 ms Pulse Test

25°C

150°C

V

GS

= 15.0 V

10

1

10

1

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

−55°C

*NOTES:

1. 250 ms Pulse Test

2. T = 25°C

C

0.1

1

4

3

4

5

6

7

V

DS

, Drain−Source Voltage (V)

V

GS

, Gate−Source Voltage (V)

ꢘ 1. ꢒ᫪ꢙꢚ⑙ꢁ

ꢘ 2. ꢛᩣ⑙ꢁ

400

100

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

V

GS

= 10 V

150°C

25°C

10

1

V

= 20 V

GS

*NOTES:

1. V = 0 V

GS

*NOTE: T = 25°C

2. 250 ms Pulse Test

C

0

50

100

150

200

250

300

350

0.2

0.4

0.6

, Body Diode Forward Voltage (V)

SD

0.8

1.0

1.2

1.4

I , Drain Current (A)

V

D

ꢘ 3. ꢒ᫪ꢀℋꢜꢝ⛾⃯ᥡꢀἡ

٬

᧥ᥡꢀի

ꢘ 4. ĳꢖᥡ

ٱ

ᵃ

ױ

ꢀիꢜꢝ⛾⁰ᥡꢀἡ

٬

ꢁႆ

10000

10

V

DS

V

DS

V

DS

= 16 V

= 40 V

= 64 V

C

iss

8

6

4

2

0

1000

100

C

oss

*NOTES:

1. V = 0 V

GS

2. f = 1 MHz

C

= C + C (C = shorted)

gs gd ds

iss

= C + C

oss

rss

ds

gd

C

rss

10

5

= C

*NOTE: I = 50 A

gd

D

0.1

1

10

80

0

20

40

60

80

V

DS

, Drain−Source Voltage (V)

Q , Total Gate Charge (nC)

g

ꢘ 5. ꢀ඙⑙ꢁ

ꢘ 6. ᧥ᥡꢀ็

www.onsemi.cn

3

FDMS039N08B

ꢎꢏꢁ்⑙ꢗ(ꢎ⛺ꢏ)

1.08

1.04

1.00

1.8

1.6

1.4

1.2

1.0

*NOTES:

1. V = 0 V

*NOTES:

1. V = 10 V

2. I = 50 A

D

0.8

0.96

0.94

GS

2. I = 250 mA

D

0.6

−100

−50

0

50

100

150

200

−50

0

50

100

150

200

150

80

T , Junction Temperature (°C)

J

ꢘ 7. ϛՏꢀիꢜꢝ⛾ꢁႆ

ꢘ 8. ꢒ᫪ꢀℋꢜꢝ⛾ꢁႆ

1000

100

10

120

100

80

60

40

20

0

V

= 10 V

GS

1 ms

10 ms

Operation in This Area

1

100 ms

DC

is Limited by R

DS(on)

*NOTES:

1. T = 25°C

C

0.1

0.01

2. T = 150°C

3. Single Pulse

J

R

= 1.2°C/W

q

JC

0.1

1

10

100

25

50

75

100

125

V

DS

, Drain−Source Voltage (V)

T , Case Temperature (°C)

C

ꢘ 9. ꢃꢄ൩͈࿅ļꢙ

ꢘ 10. ꢃꢄ⃯ᥡꢀἡ⛾૶ꢞꢁ

100

10

1

3.0

2.5

2.0

1.5

1.0

0.5

0.0

If R = 0

= (L) (I ) / (1.3 x RATED BV

t

AV

− V

DD

)

AS

DSS

If R = 0

= (L / R) In [(I x R) / (1.3 x RATED BV

t

AV

− V ) + 1]

DD

AS

DSS

Starting T = 25°C

J

Starting T = 150°C

J

0.01

0.1

1

10

100

1000

0

10

20

30

40

50

60

70

t , Time in Avalanche (ms)

AV

V

DS

, Drain to Source Voltage (V)

ꢘ 11. ∮

٭

ꢈꢀꢟꢕꢐ்ꢠ

ꢘ 12. ᩣꢡꢀ඙(Eoss) ⛾⃯ᥡ-⁰ᥡꢀի

www.onsemi.cn

4

FDMS039N08B

ꢎꢏꢁ்⑙ꢗ(ꢎ⛺ꢏ)

2

1

0.5

0.2

0.1

0.01

P

DM

0.05

t

1

0.02

t

2

0.01

*NOTES:

1. Z (t) = 125°C/W Max.

q

JA

2. Duty Factor, D = t / t

1

2

Single pulse

10⁻²

3. T − T = P

x Z (t)

q

JC

JM

C

DM

0.001

10⁻³

10⁻¹

1

10

100

1000

t , ꢐꢑ௙ꢂꢒঽ៖⃄ (ꢓ)

1

ꢘ 13. ɼꢔ⋍ꢢꢂꢣএ

www.onsemi.cn

5

FDMS039N08B

I

G

= ꢖᲟ

ꢘ 14. ᧥ᥡꢀ็Ἣᚥꢀᢿ⛾Ểꢤ

R_L

V_DS

90%

V_DS

V_GS

V_DD

R_G

10%

V_GS

DUT

V_GS

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

ꢘ 15. ℋꢁꢕꢐἫᚥꢀᢿ⛾Ểꢤ

V_GS

ꢘ 16. ∮

٭

ꢈꢀꢟꢕꢐἫᚥꢀᢿ⛾Ểꢤ

www.onsemi.cn

6

FDMS039N08B

+

DUT

V_DS

_

I_SD

L

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dtcontrolled by R

G

• I controlled by pulse period

SD

Gate Pulse Width

D =

V_GS

Gate Pulse Period

10 V

(Driver)

I_FM, Body Diode Forward Current

I_SD

di/dt

(DUT)

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

(DUT)

V_DD

Body Diode

Forward Voltage Drop

ꢘ 17. ꢖᥡ

ٱ

ꢥꢦdv/dt ꢧꢆἫᚥꢀᢿ⛾Ểꢤ

ꢨ᎕᧧ᚖ⛾ꢅ៽ꢩꢪ

†

ꢫꢌ

ꢫꢌ᧧ᚖ

ꢨ᎕

ꢬꢭꢮ

ꢯꢰ

Shipping

FDMS039N08B

PQFN8 5X6, 1.27P

(Power 56)

13”

12 ꢗ݃

3000 / Tape & Reel

(Pb−Free, Halide Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States

and/or other countries.

www.onsemi.cn

7

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

PQFN8 5X6, 1.27P

CASE 483AE

ISSUE C

DATE 21 JAN 2022

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13655G

PQFN8 5X6, 1.27P

PAGE 1 OF 1

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

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ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

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


型号：	FDMS039N08B
厂家：	ONSEMI
描述：	N 沟道，PowerTrench® MOSFET，80V，100A，3.9mΩ 开关脉冲光电二极管晶体管
文件：	总9页 (文件大小：747K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDMS039N08B [ONSEMI]

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