FDMS3672 [ONSEMI]
N 沟道，UltraFET® Trench MOSFET，100V，22A，23mΩ;
| 型号： | FDMS3672 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，UltraFET® Trench MOSFET，100V，22A，23mΩ |
| 文件： | 总7页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
UltraFET Trench
V
R
MAX
I MAX
D
DS
DS(ON)
100 V
23 mW @ 10 V
29 mW @ 6 V
22 A
100 V, 22 A, 23 mW
Pin 1
S
S
G
S
FDMS3672
General Description
UItraFET devices combine characteristics that enable benchmark
efficiency in power conversion applications. Optimized for R
,
DS(on)
low ESR, low total and Miller gate charge, these devices are ideal for
high frequency DC to DC converters.
D
D D
D
Bottom
WDFN8 5x6, 1.27P
Power 56
Features
• Max R
• Max R
= 23 mW at V = 10 V, I = 7.4 A
GS D
CASE 506DP
DS(on)
= 29 mW at V = 6 V, I = 6.6 A
DS(on)
GS
D
• Typ Qg = 31 nC at V = 10 V
GS
D
4
G
S
S
5
• Low Miller Charge
• Optimized Efficiency at High Frequencies
D
D
6
7
3
• This Device is Pb−Free, Halide Free and RoHS Compliant
2
1
Applications
• DC−DC Conversion
S
D
8
N-CHANNEL MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Drain−Source Voltage
Value
100
20
Unit
V
MARKING DIAGRAM
V
DS
V
GS
Gate−Source Voltage
V
&Z&2&K
FDM
S3672
I
D
Drain Current
A
– Continuous (Package Limited)
– Continuous (Silicon Limited)
– Continuous (Note 1a)
– Pulsed
T
T
A
= 25°C
= 25°C
22
41
7.4
30
C
C
T = 25°C
P
D
Power Dissipation
Power Dissipation (Note 1a)
T
A
= 25°C
C
78
2.5
W
T = 25°C
&Z
&2
&K
= Assembly Location
= Date Code
= Lot Run Traceability Code
T , T
Operating and Storage Junction
Temperature Range
–55 to
+150
°C
J
STG
FDMS3672 = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
Unit
†
Device
Package
Shipping
R
Thermal Resistance,
1.6
°C/W
q
JC
FDMS3672
WDFN8
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
Junction to Case
R
Thermal Resistance,
Junction to Ambient (Note 1a)
53
°C/W
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
May, 2023 − Rev. 3
FDMS3672/D
FDMS3672
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
−
−
−
V
DSS
D
GS
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
104
mV/°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 80 V V, V = 0 V
−
−
−
−
−
−
1
mA
DSS
GS
= 80 V, V = 0 V, T = 55°C
10
100
GS
J
I
Gate to Source Leakage Current
=
20 V, V = 0 V
nA
GSS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.0
3.1
4.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−11
−
mV/°C
GS(th)
J
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 7.4 A
−
−
−
−
19
24
33
20
23
29
40
−
mW
DS(on)
D
= 6 V, I = 6.6 A
D
= 10 V, I = 7.4 A, T = 125°C
D
J
g
FS
= 10 V, I = 7.4 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 50 V, V = 0 V,
−
−
−
−
2015
210
90
2680
280
135
−
pF
pF
pF
W
iss
DS
GS
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1 MHz
1.3
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
V
= 50 V, I = 7.4 A,
−
−
−
−
−
23
11
36
8
37
20
58
16
44
ns
ns
ns
ns
nC
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
Q
Total Gate Charge at 10 V
V
GS
V
DD
= 0 V to 10 V,
31
g
= 50 V, I = 7.4 A
D
Q
Total Gate Charge at 4.5 V
V
GS
V
DD
= 0 V to 4.5 V,
−
−
−
nC
g
= 50 V, I = 7 A
D
Q
Gate to Source Charge
V
DD
V
DD
= 50 V, I = 7.4 A
−
−
9.5
8
−
−
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
= 50 V, I = 7.4 A
D
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 7.4 A (Note 2)
−
−
−
0.8
52
1.2
78
V
SD
GS
S
t
I = 7.4 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
101
152
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
b) 125°C/W when mounted on
a) 50°C/W when mounted on
2
a minimum pad of 2 oz copper.
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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2
FDMS3672
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
60
50
3.0
2.5
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 8 V
40
30
20
10
V
= 6 V
= 5 V
GS
2.0
1.5
V
= 8 V
GS
V
GS
1.0
V
= 10 V
PULSE DURATION = 80 ms
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
0.5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
60
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
60
50
40
30
I
V
= 7.4 A
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
I
D
= 7.4 A
GS
T = 150°C
J
T = 25°C
J
0.8
0.6
20
10
0.4
25
50
75
100
125
150
4.5
6.0
V , Gate to Source Voltage (V)
GS
7.5
10
−50 −25
0
9.0
T , Junction Temperature (5C)
J
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
100
10
30
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
25
20
T = 150°C
J
T = 150°C
J
1
15
10
5
T = 25°C
J
0.1
T = 25°C
J
T = −55°C
J
0.01
T = −55°C
J
1E−3
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
8
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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3
FDMS3672
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C unless otherwise noted)
J
10
8
10000
I
D
= 7.4 A
V
DD
= 25 V
C
iss
V
= 50 V
DD
1000
100
10
C
oss
rss
6
4
2
0
V
= 75 V
DD
C
f = 1 MHz
V = 0 V
GS
0
10
20
Q , Gate Charge (nC)
30
40
0.1
10
, Drain to Source Voltage (V)
DS
80
1
V
g
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
20
10
50
40
30
20
10
0
V
= 10 V
GS
V
= 6 V
GS
T = 25°C
J
T = 125°C
J
Limited by Package
R
= 1.6°C/W
q
JC
1
0.01
0.1
10
100 300
1
25
50
75
100
125
150
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
60
2000
1000
100 ms
V
GS
= 10 V
FOR TEMPERATURES
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
10
1 ms
100
10
10 ms
150 * TA
Ǹ
1
0.1
I + I25ƪ ƫ
125
OPERATION IN
THIS AREA MAY
BE LIMITED BY
100 ms
1 s
T = 25°C
A
R
DS(on)
10 s
DC
SINGLE PULSE
0.01
T = MAX RATED
J
SINGLE PULSE
1
R
= 125°C/W
q
JA
T = 25°C
A
1E−3
0.3
−3
−2
−1
0
1
2
3
0.1
10
, Drain to Source Voltage (V)
10
10
10
10
10
10
10
100
400
1
V
DS
t, Pulse Width (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
FDMS3672
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
Peak T = P
× Z
× R + T
q
JA JA A
q
J
DM
1E−3
5E−4
−2
−1
0
2
3
−3
1
10
10
10
t, Rectangular Pulse Duration (s)
10
10
10
10
Figure 13. Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 5x6, 1.27P
CASE 506DP
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13598G
WDFN8 5X6, 1.27P
PAGE 1 OF 1
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