FDMS4435BZ [ONSEMI]
P 沟道 PowerTrench® MOSFET -30V，-18A，20mΩ;
| 型号： | FDMS4435BZ |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道 PowerTrench® MOSFET -30V，-18A，20mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：410K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel,
POWERTRENCH)
V
r
MAX
I MAX
D
DS
DS(on)
−30 V
20 mW @ −10 V
37 mW @ −4.5 V
−18 A
-30 V, -18 A, 20 mW
FDMS4435BZ
Pin 1
General Description
S
S
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance. This device is well suited for Power
Management and load switching applications common in Notebook
Computers and Portable Battery Packs.
S
G
D
D
D
D
Bottom
Top
Features
PQFN8 5X6, 1.27P
(Power 56)
CASE 483AE
• Max r
• Max r
= 20 mW at V = −10 V, I = −9.0 A
GS D
DS(on)
DS(on)
= 37 mW at V = −4.5 V, I = −6.5 A
GS
D
• Extended VGSS range (−25 V) for battery applications
• High Performance Trench Technology for Extremely Low r
• High Power and Current Handling Capability
• HBM ESD Protection Level >7 kV Typical (Note 4)
• 100% UIL Tested
DS(on)
MARKING DIAGRAM
&Z&3&K
FDMS
4435BZ
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digits Lot Run Code
• High Side in DC−DC Buck Converters
• Notebook Battery Power Management
• Load Switch in Notebook
FDMS4435BZ = Specific Device Code
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
PIN ASSIGNMENT
Symbol
Parameter
Drain to Source Voltage
Ratings
−30
Unit
V
V
DS
V
GS
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
Gate to Source Voltage
Drain Current
25
V
I
D
A
− Continuous (Package Limited) T = 25°C
−18
−35
−9.0
−50
C
− Continuous (Silicon Limited) T = 25°C
C
− Continuous T = 25°C (Note 1a)
A
− Pulsed
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation
18
mJ
W
AS
P
D
T
= 25°C
39
2.5
C
T = 25°C (Note 1a)
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Ratings
3.2
Unit
R
q
JC
Thermal Resistance, Junction to Case
°C/W
R
q
JA
Thermal Resistance, Junction to Ambient
(Note 1a)
50
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
May, 2023 − Rev. 3
FDMS4435BZ/D
FDMS4435BZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−30
−
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 mA, referenced to 25°C
−23
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −24 V, V = 0 V
−
−
−
−
−1
10
mA
mA
DSS
GSS
DS
GS
I
= 25 V, V = 0 V
DS
GS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−1.0
−
−1.9
6
−3.0
−
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, referenced to 25°C
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source
On Resistance
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −9.0 A
−
−
−
−
15
22
21
25
20
37
28
−
DS(on)
D
mW
= −4.5 V, I = −6.5 A
D
= −10 V, I = −9.0 A T = 125°C
D
J
g
FS
Forward Transconductance
= −5 V, I = −9.0 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −15 V, V = 0 V, f = 1 MHz
−
−
−
−
1540
290
260
5
2050
390
385
−
pF
pF
pF
W
iss
GS
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
R
= −15 V, I = −9.0 A, V = −10 V,
−
−
−
−
−
−
−
−
9
17
18
56
33
47
25
−
ns
ns
d(on)
DD
D
GS
= 6 W
GEN
t
r
10
35
19
34
18
5
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
GS
= 0 V to −10 V,V = −15 V, I = −9.0 A
nC
nC
nC
nC
g
DD
D
= 0 V to −4.5 V, V = −15 V, I = −9.0 A
g
DD
D
Q
= 10 V, V = −15 V, I = −9.0 A
DD D
gs
gd
Q
9
−
DRAIN−SOURCE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = −1.9 A (Note 2)
−
−
−
−
0.75
0.86
25
1.2
1.5
39
V
SD
GS
S
= 0 V, I = −9.0 A (Note 2)
GS
S
t
Reverse Recovery Time
I = −9.0 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
12
21
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a. 50°C/W when mounted on a
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
2
1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 18 mJ is based on starting T = 25°C, L = 1 mH, I = −6 A, V = −27 V, V = −10 V. 100% tested at L = 0.3 mH, I = −8 A.
AS
J
AS
DD
GS
AS
4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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2
FDMS4435BZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
J
50
40
30
20
10
0
4.0
V
= −3.5 V
GS
V
= −10 V
V
= −4 V
GS
GS
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
= −6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
V
= −4.5 V
GS
V
= −4 V
GS
V
GS
= −4.5 V
V
= −3.5 V
GS
V
GS
= −6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= −10 V
0
1
2
3
4
0
10
20
30
40
50
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
I
V
= − 9 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
I
= − 9 A
D
= −10 V
GS
T = 125°C
J
T = 25°C
J
2
4
6
8
10
−75 −50 −25
0
25
50
75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On− Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source Voltage
50
50
PULSE DURATION = 80 ms
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
10
1
40
T = 125°C
J
30
20
T = 25°C
J
0.1
T = 125°C
J
T = −55°C
J
T = 25°C
J
0.01
0.001
10
T = −55°C
J
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs.
Source Current
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3
FDMS4435BZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
10
8
5000
I
D
= −9 A
C
iss
V
DD
= −10 V
6
1000
V
DD
= −15 V
4
C
oss
V
DD
= −20 V
2
C
rss
f = 1 MHz
= 0 V
V
GS
0
100
0
8
16
24
32
40
0.1
1
10
30
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
20
10
40
32
V
GS
= −10 V
24
16
8
T = 25°C
J
T = 100°C
J
V
GS
= −4.5 V
T = 125°C
J
Package Limited
R
= 3.2°C/W
q
JC
1
0.01
0
25
0.1
1
10
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
10−1
100
V
GS
= 0 V
10−2
10−3
10−4
10−5
10−6
10−7
10−8
10−9
10−10
100 ms
10
1 ms
10 ms
T = 125°C
J
1
100 ms
THIS AREA IS
LIMITED BY r
T = 25°C
J
DS(on)
1 s
SINGLE PULSE
T = MAX RATED
0.1
10 s
J
DC
R
= 125°C/W
q
JA
T = 25°C
A
0.01
0
3
6
9
12 15 18 21 24 27 30 33
0.05 0.1
1
10
100
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 11. Gate Leakage Current vs. Gate to Source
Voltage
Figure 12. Forward Bias Safe Operating Area
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4
FDMS4435BZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
1000
100
10
SINGLE PULSE
T = MAX RATED
J
R
= 125°C/W
q
JA
1
T = 25°C
A
0.5
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
2
NOTES:
DUTY CYCLE: D = t / t
SINGLE PULSE
1
2
R
= 125°C/W
PEAK T = P x Z
x R
q
+ T
JA A
q
q
JA
J
DM
JA
0.001
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 14. Junction−to−Ambient Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
FDMS4435BZ
FDMS4435BZ
PQFN8 5X6, 1.27P
(Power 56)
13”
12 mm
3000 / Tape & Reel
(Pb−Free, Halide Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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