FDMS7620S [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，30V;
| 型号： | FDMS7620S |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，30V |
| 文件： | 总12页 (文件大小：515K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDMS7620S
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 13 A, 20.0 mΩ Q2: 30 V, 22 A, 11.2 mΩ
Features
Q1: N-Channel
General Description
This device includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal synchro-
nous buck power stage in terms of efficiency and PCB utilization.
The low switching loss “High Side” MOSFET is complementory
by a low conduction loss “Low Side” SyncFET.
Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 10.1 A
Max rDS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 7.5 A
Q2: N-Channel
Max rDS(on) = 11.2 mΩ at VGS = 10 V, ID = 12.4 A
Max rDS(on) = 14.2 mΩ at VGS = 4.5 V, ID = 10.9 A
Applications
Pinout optimized for simple PCB design
Thermally efficient dual Power 56 Package
RoHS Compliant
Synchronous Buck Converter for:
Notebook System Power
General Purpose Point of Load
S2
Q2
S2
S2
5
6
7
8
4
3
2
1
G2
S1/D2
D1
G1
D1
D1
D1
Pin1
Top
Bottom
Q1
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
Q2
30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
30
±20
13
V
V
(Note 3)
TC = 25 °C
TA = 25 °C
±20
22
ID
10.1
27
12.4
45
A
-Pulsed
EAS
Single Pulse Avalanche Energy
(Note 4)
TA = 25°C
TA = 25°C
9
21
mJ
W
Power Dissipation for Single Operation
2.21a
1.01c
2.51b
1.01d
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
571a
1251c
501b
1201d
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ”
Tape Width
Quantity
FDMS7620S
FDMS7620S
Power 56
12 mm
3000 units
©2013 Semiconductor Components Industries, LLC.
October-2017, Rev.3
1
Publication Order Number:
FDMS7620S/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max Units
Off Characteristics
ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V
Q1
Q2
30
30
BVDSS
Drain to Source Breakdown Voltage
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
Q1
Q2
19
19
mV/°C
I
D = 10 mA, referenced to 25°C
Q1
Q2
1
IDSS
IGSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
μA
500
Gate to Source Leakage Current,
Forward
Q1
Q2
100
100
nA
nA
V
V
GS = 20 V, VDS = 0 V
On Characteristics
GS = VDS, ID = 250 μA
Q1
Q2
1.0
1.0
2.2
2.0
3.0
3.0
VGS(th)
Gate to Source Threshold Voltage
V
VGS = VDS, ID = 1 mA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25°C
ID = 10 mA, referenced to 25°C
Q1
Q2
-6
-5
mV/°C
V
V
GS = 10 V, ID = 10.1 A
GS = 4.5 V, ID = 7.5 A
15.2
22.7
18.7
20.0
30.0
22.5
Q1
Q2
VGS = 10 V, ID = 10 A, TJ = 125°C
rDS(on)
Static Drain to Source On Resistance
mΩ
VGS = 10 V, ID = 12.4 A
VGS = 4.5 V, ID = 10.9 A
VGS = 10 V, ID = 12.4 A, TJ = 125°C
8.3
10.5
8.9
11.2
14.2
15.1
VDD = 5 V, ID = 10.1 A
Q1
Q2
22
53
gFS
Forward Transconductance
S
V
DD = 5 V, ID = 12.4 A
Dynamic Characteristics
Q1
Q2
457
1050 1400
608
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
Ω
Q1
Q2
167
358
222
477
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS = 15 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
22
35
31
49
Q1
Q2
0.2
0.2
1.6
1.2
4.4
3.5
Switching Characteristics
Q1
Q2
5.2
6.6
10
14
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ns
ns
Q1
V
DD = 15 V, ID = 10.1 A, RGEN = 6 Ω
Q1
Q2
1.2
1.8
10
10
Q1
Q2
11.9
17.4
22
32
Q2
Turn-Off Delay Time
Fall Time
ns
V
DD = 15 V, ID = 12.4 A, RGEN = 6 Ω
Q1
Q2
1.4
1.5
10
10
ns
Q1
Q2
7.2
15.6
11
23
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10 V
VGS = 0V to 5 V
nC
nC
nC
nC
Q1
VDD = 15 V,
Q1
Q2
3.8
7.9
6
12
I
D = 10.1 A
Q1
Q2
1.6
3.2
Q2
VDD = 15 V,
ID = 12.4 A
Q1
Q2
1.1
1.6
Qgd
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2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max Units
Drain-Source Diode Characteristics
VGS = 0 V, IS = 10.1 A
VGS = 0 V, IS = 12.4 A
(Note 2) Q1
(Note 2) Q2
0.90
0.83
1.2
V
VSD
trr
Source-Drain Diode Forward Voltage
Reverse Recovery Time
1.2
Q1
Q2
16
18
28
ns
32
Q1
IF = 10.1 A, di/dt = 100 A/s
Q2
IF = 12.4 A, di/dt = 300 A/s
Q1
Q2
4
13
10
nC
23
Qrr
Reverse Recovery Charge
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined
θJA
θJC
θCA
by the user's board design.
b. 50 °C/W when mounted on
a 1 in pad of 2 oz copper
a. 57 °C/W when mounted on
a 1 in pad of 2 oz copper
2
2
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
o
4. Q1: E of 9 mJ is based on starting T = 25 C, L = 0.3 mH, I = 8 A, V = 27 V, V = 10 V. 100% test at L = 0.1 mH, I = 12 A.
AS
J
AS
DD
GS
AS
o
Q2: E of 21 mJ is based on starting T = 25 C, L = 0.3 mH, I = 12 A, V = 27 V, V = 10 V. 100% test at L = 0.1 mH, I = 18 A.
AS
J
AS
DD
GS
AS
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3
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
27
24
21
18
15
12
9
6
5
4
3
2
1
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
VGS = 3.5 V
VGS = 10 V
VGS = 6 V
VGS = 4 V
VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
6
3
VGS = 3.5 V
VGS = 10 V
VGS = 6 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
3
6
9
12 15 18 21 24 27
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
60
ID = 10.1 A
GS = 10 V
PULSE DURATION = 80 μs
V
DUTY CYCLE = 0.5% MAX
50
40
30
20
10
0
1.4
1.2
1.0
0.8
0.6
ID = 10.1 A
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
30
27
VGS = 0 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
24
21
18
15
12
9
TJ = 150 o
C
VDS = 5 V
1
TJ = 150 o
C
TJ = 25 oC
0.1
TJ = 25 o
C
TJ = -55 o
C
TJ = -55 o
C
0.01
6
3
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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4
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
8
1000
100
10
ID = 10.1 A
Ciss
VDD = 10 V
6
Coss
VDD = 15 V
VDD = 20 V
4
Crss
2
f = 1 MHz
= 0 V
V
GS
0
0.1
1
10
30
0
2
4
6
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
50
20
10
1
10
100 μs
TJ = 25 oC
1 ms
TJ = 100 oC
THIS AREA IS
10 ms
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
TJ = 125 o
C
0.1
0.01
10s
DC
R
θJA = 125 oC/W
TA = 25 oC
1
0.001
0.01
0.1
1
10
100200
0.01
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Forward Bias Safe
Operating Area
1000
SINGLE PULSE
RθJA = 125 oC/W
100
10
1
0.1
10-4
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
P
DM
0.01
t
1
SINGLE PULSE
t
2
R
θJA = 125 oC/W
0.001
0.001
NOTES:
DUTY FACTOR: D = t /t
1
2
(Note 1b)
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
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Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
45
36
27
18
9
6
4
2
0
VGS = 10 V
VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
VGS = 3.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V VGS = 10 V
VGS = 4.5 V
0
0.0
0.5
1.0
1.5
2.0
0
9
18
27
36
45
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. On-Region Characteristics
Figure 14. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
28
ID = 12.4 A
GS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
24
1.4
1.2
1.0
0.8
0.6
ID = 12.4 A
20
16
TJ = 125 o
C
12
8
TJ = 25 o
C
4
2
4
6
8
10
-75 -50 -25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance vs Gate to
Source Voltage
Figure 15. Normalized On-Resistance
vs Junction Temperature
45
50
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
1
36
27
18
9
VDS = 5 V
TJ = 125 o
C
TJ = 125 o
C
TJ = 25 o
C
TJ = 25 o
C
0.1
TJ = -55 o
C
TJ = -55 o
C
0.01
0.001
0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 17. Transfer Characteristics
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
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Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted
10
8
3000
1000
ID = 12.4 A
Ciss
VDD = 10 V
6
Coss
VDD = 15 V
VDD = 20 V
4
100
10
2
Crss
f = 1 MHz
VGS = 0 V
0
30
0.1
1
10
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 20. Capacitance vs Drain
to Source Voltage
Figure 19. Gate Charge Characteristics
70
10
30
10
100 μs
TJ = 25 oC
1 ms
1
0.1
THIS AREA IS
LIMITED BY r
10 ms
100 ms
TJ = 100 oC
DS(on)
1s
SINGLE PULSE
TJ = MAX RATED
10s
DC
TJ = 125 o
C
R
θJA = 120 oC/W
TA = 25 oC
0.01
1
0.01
0.1
1
10
100200
0.001
0.01
0.1
1
10 30
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 22. Forward Bias Safe
Operating Area
Figure 21. Unclamped Inductive
Switching Capability
1000
SINGLE PULSE
R
θJA = 120 oC/W
100
10
1
0.1
10-4
10-3
10-2
10-1
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 23. Single Pulse Maximum Power
Dissipation
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8
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
SINGLE PULSE
0.01
t
2
RθJA = 120 oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
(Note 1b)
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 24. Junction-to-Ambient Transient Thermal Response Curve
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Typical Characteristics (continued)
TM
SyncFET
Schottky body diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
ON Semiconductor’s SyncFETTM process embeds a Schottky
®
diode in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external Schottky
diode in parallel with
a
MOSFET. Figure 26 shows the
reverse recovery characteristic of the FDMS7620S.
10-2
15
TJ = 125 o
C
10-3
10-4
10-5
10-6
10
TJ = 100 o
C
di/dt = 300 A/μs
5
0
TJ = 25 o
C
-5
0
50
100
150
200
0
5
10
15
20
25
30
TIME (ns)
VDS, REVERSE VOLTAGE (V)
Figure 26. SyncFETTM Body Diode Reverse
Leakage vs. Drain-Source Voltage
Figure 25. FDMS7620S SyncFETTM Body
Diode Reverse Recovery Characteristic
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
FDMS7660
25A, 30V, 0.0028ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN
ROCHESTER
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