FDMS86580-F085 [ONSEMI]
N 沟道,PowerTrench® MOSFET,60V,50A,9.6mΩ;型号: | FDMS86580-F085 |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,60V,50A,9.6mΩ |
文件: | 总7页 (文件大小:2436K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FDMS86580-F085
®
N-Channel PowerTrench MOSFET
60 V, 50 A, 9.6 mΩ
Features
Bottom
Top
Typical R
= 7.9 mΩ at V = 10V, I = 50 A
GS D
DS(on)
Pin 1
Typical Q
= 20 nC at V = 10V, I = 50 A
g(tot)
GS
D
S
Pin 1
S
UIS Capability
S
G
RoHS Compliant
Qualified to AEC Q101
D
D
D
D
Power 56
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
Ratings
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
60
V
V
VGS
±20
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
TC = 25°C
TC = 25°C
50
ID
A
See Figure 4
EAS
PD
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
19
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate Above 25oC
75
0.5
TJ, TSTG Operating and Storage Temperature
-55 to + 175
2.0
RθJC
RθJA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
50
Notes:
1: Current is limited by bondwire configuration.
2: Starting T = 25°C, L = 20μH, I = 44A, V = 60V during inductor charging and V = 0V during time in avalanche.
J
AS
DD
DD
3: R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θJA
mounting surface of the drain pins. R
presented here is based on mounting on a 1 in pad of 2oz copper.
is guaranteed by design, while R
is determined by the board design. The maximum rating
θJC
θJA
2
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDMS86580
FDMS86580-F085
Power 56
13”
12mm
3000units
©2016 Semiconductor Components Industries, LLC.
August-2017,Rev. 2
Publication Order Number:
FDMS86580-F085/D
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
IDSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
ID = 250μA, VGS = 0V
60
-
-
-
-
-
-
1
V
V
DS= 6 0 V , T J = 25oC
μA
mA
nA
VGS = 0V
TJ = 175oC (Note 4)
-
1
IGSS
VGS = ±20V
-
±100
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
2.0
3.5
7.9
4.2
9.6
V
TJ = 25oC
-
-
mΩ
mΩ
ID = 50A,
TJ = 175oC (Note 4)
15.6
19.5
V
GS= 10V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1430
440
25
1.8
20
3
-
-
pF
pF
pF
Ω
V
DS = 30V, VGS = 0V,
Coss
Crss
Rg
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
-
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge
30
-
nC
nC
nC
nC
VDD = 30V
ID = 50A
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
VGS = 0 to 2V
9
-
Qgd
4
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay
Rise Time
-
-
-
-
-
-
-
13
7
30
-
ns
ns
ns
ns
ns
ns
-
V
DD = 30V, ID = 50A,
VGS = 10V, RGEN = 6Ω
td(off)
tf
Turn-Off Delay
Fall Time
15
5
-
-
toff
Turn-Off Time
-
30
Drain-Source Diode Characteristics
I
SD = 50A, VGS = 0V
ISD = 25A, VGS = 0V
DD = 48V, IF = 50A,
dISD/dt = 100A/μs
-
-
-
-
0.97
0.88
44
1.3
1.2
66
V
VSD
Source-to-Drain Diode Voltage
V
trr
Reverse-Recovery Time
ns
nC
V
Qrr
Reverse-Recovery Charge
28
42
Note:
4: The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
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2
Typical Characteristics
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
Figure 3. Normalized Maximum Transient Thermal Impedance
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
Figure 4. Peak Current Capability
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3
Typical Characteristics
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD
)
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
1
STARTING TJ = 150oC
0.001
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
Typical Characteristics
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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