FDN359BN [ONSEMI]
N 沟道逻辑电平 PowerTrench® MOSFET 30V，2.7A，46mΩ;
| 型号： | FDN359BN |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道逻辑电平 PowerTrench® MOSFET 30V，2.7A，46mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH), Logic
Level
V
R
MAX
I MAX
D
DSS
DS(ON)
30 V
0.046 W @ 10 V
0.060 W @ 4.5 V
2.7 A
FDN359BN
D
General Description
This N−Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored
to minimize the on−state resistance and yet maintain superior
switching performance.
G
S
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
These devices are well suited for low voltage and battery powered
applications where low in−line power loss and fast switching are
required.
MARKING DIAGRAM
Features
359BMG
• 2.7 A, 30 V
G
♦ R
♦ R
= 0.046 W @ V = 10 V
GS
DS(ON)
= 0.060 W @ V = 4.5 V
DS(ON)
GS
359B = Specific Device Code
• Very Fast Switching Speed
• Low Gate Charge (5 nC Typical)
• High Performance Version of Industry Standard SOT−23 Package.
Identical Pin Out to SOT−23 with 30% Higher Power Handling
Capability
M
G
= Month Code
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
• This Device is Pb−Free and Halide Free
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
D
A
Symbol
Parameter
Drain−Source Voltage
Value
Unit
V
V
DSS
V
GSS
30
20
Gate−Source Voltage
V
I
D
Maximum Drain
Current
Continuous (Note 1a)
Pulsed
2.7
A
G
S
15
P
D
Maximum Power
Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T , T
Operating and Storage Temperature Range
−55 to +150
°C
J
STG
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Max
Unit
R
Thermal Resistance, Junction−to−Ambient
(Note 1a)
250
°C/W
q
JA
R
Thermal Resistance, Junction−to−Case
(Note 1)
75
°C/W
q
JC
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2023 − Rev. 2
FDN359BN/D
FDN359BN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
= 0 V, I = 250 mA
30
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature Coefficient
I = 250 mA, Referenced to 25_C
D
−
21
mV/_C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 24 V, V = 0 V
−
−
−
−
−
−
1
mA
DSS
GS
= 24 V, V = 0 V, T = −55_C
10
100
GS
J
I
Gate−Body Leakage
=
20 V, V = 0 V
nA
GSS
DS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
DS
= V I = 250 mA
GS, D
1
1.8
3
V
GS(th)
Gate Threshold Voltage Temperature Coefficient I = 250 mA, Referenced to 25_C
−
−4
−
mV/_C
DVGS(th)
DTJ
D
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 2.7 A
−
−
0.026 0.046
0.032 0.060
0.033 0.075
W
DS(on)
D
= 4.5 V, I = 2.4 A,
D
= 10 V, I = 2.7 A, T = 125_C
−
D
J
I
On−State Drain Current
= 10 V, V = 5 V
15
−
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 5 V, I = 2.7 A
11
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V, f = 1.0 MHz
−
−
−
485
105
65
650
140
100
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1.0 MHz
1.8
G
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= 15 V, I = 1 A,
−
−
−
−
−
−
−
7
5
14
10
35
4
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
20
2
ns
d(off)
t
f
ns
Q
V
DS
= 15 V, I = 2.7 A, V = 5 V
5
7
nC
nC
nC
g
D
GS
Q
1.3
1.8
−
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
I
S
−
−
−
0.7
12
3
0.42
1.2
20
A
V
V
SD
Drain−Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V = 0 V, I = 0.42 A (Note 2)
GS S
trr
IF = 2.7 A, diF/dt = 100 A/ms
ns
nC
Qrr
5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θ
θ
CA
JC
a) 250°C/W when mounted on
b) 270°C/W when mounted on
a minimum pad
2
a 0.02 in pad of 2 oz copper
Scale 1:1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
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2
FDN359BN
TYPICAL CHARACTERISTICS
15
12
9
2.6
V
V
= 10 V
= 4.5 V
GS
GS
V
GS
= 3.0 V
2.2
V
V
= 4 V
= 3.5 V
GS
GS
1.8
3.5 V
V
= 3 V
GS
1.4
1.0
0.6
6
4.0 V
4.5 V
5.0 V
6.0 V
3
10.0 V
V
= 2.5 V
2
GS
0
0.5
1
1.5
2.5
0
9
I , Drain Current (A)
0
3
6
12
15
V
DS
, Drain to Source Voltage (V)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation
with Drain Current and Gate Voltage
1.2
1.1
1.0
0.08
0.06
I
V
= 2.7 A
I
D
= 1.35 A
D
= 10 V
GS
T = 125°C
A
0.04
0.02
0.9
0.8
T = 25°C
A
−50
−25
0
25
50
75
100
125 150
2
4
6
8
10
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (5C)
J
Figure 3. On−Resistance Variation
Figure 4. On−Resistance Variation
with Gate−to−Source Voltage
with Temperature
100
10
15
V
GS
= 0 V
V
DS
= 5 V
12
1
9
6
3
0
T = 125°C
A
T = −55°C
A
0.1
T = 25°C
A
0.01
T = 125°C
A
T = 25°C
A
T = −55°C
A
0.001
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.5
2
2.5
3
3.5
4
1
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
FDN359BN
TYPICAL CHARACTERISTICS (continued)
10
8
800
f = 1 MHz
= 0 V
I
D
= 2.7 A
V
= 10 V
DS
V
GS
600
400
200
0
V
= 15 V
DS
C
ISS
6
V
= 20 V
DS
4
2
0
C
OSS
C
RSS
0
4
0
10
, Drain to Source Voltage (V)
2
6
8
10
5
15
20
25
30
V
DS
Q , Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
30
25
20
15
10
5
100
10
1
Single Pulse
R
= 270°C/W
q
JA
T = 25°C
A
R
LIMIT
100 ms
DS(ON)
1 ms
10 ms
100 ms
0.1
V
= 10 V
GS
Single Pulse
= 270°C/W
1 s
DC
R
q
JA
T = 25°C
A
0
0.01
0.01
0.1
1
10
100
0.001
0.1
0.01
1
10
100
1000
t , Time (s)
1
V
DS
, Drain to Source Voltage (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.2
R
R
(t) = r(t) × R
= 270°C/W
0.1
0.01
qJA
qJA
0.1
q
JA
0.05
P(pk)
0.02
0.01
t1
t2
Single Pulse
T − T = P × R (t)
q
JA
J
A
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Time (s)
1
Figure 11. Transient Thermal Response Curve
NOTE: Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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4
FDN359BN
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
FDN359BN
359B
SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
(Pb−Free, Halide Free)
7″
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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