FDP085N10AF102 [FAIRCHILD]
N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ; N沟道MOSFET PowerTrench® 100 V， 96 A， 8.5英里©
| 型号： | FDP085N10AF102 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ |
| 文件： | 总9页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2013
FDP085N10A_F102
N-Channel PowerTrench MOSFET
100 V, 96 A, 8.5 mΩ
®
Features
General Description
•
•
•
•
RDS(on) = 7.35 mΩ ( Typ.)@ VGS = 10 V, ID = 96 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor®’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Fast Switching Speed
Low Gate Charge, QG = 31 nC (Typ.)
High Performance Trench Technology for Extremely Low
RDS(on)
•
•
High Power and Current Handling Capability
RoHS Compliant
Applications
•
•
•
Synchronous Rectification for ATX / Sever / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
D
G
G
TO-220
D
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
Parameter
FDP085N10A_F102
Unit
V
Drain to Source Voltage
Gate to Source Voltage
100
±20
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
96
ID
Drain Current
A
68
IDM
Drain Current
(Note 1)
(Note 2)
(Note 3)
384
A
mJ
EAS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
269
6.0
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
188
PD
Power Dissipation
1.25
-55 to +175
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Unit
FDP085N10A_F102
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.8
oC/W
62.5
©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP085N10A
FDP085N10A_F102
TO-220
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V,TC = 25oC
100
-
-
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250μA, Referenced to 25oC
0.07
V/oC
V
DS = 80V, VGS = 0V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 80V, TC = 150oC
500
±100
VGS = ±20V, VDS = 0V
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250μA
VGS = 10V, ID = 96A
VDS = 10V, ID = 96A
2.0
-
4.0
8.5
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
7.35
72
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
2025
468
20
2695
pF
pF
pF
pF
nC
nC
nC
nC
Ω
VDS = 50V, VGS = 0V
f = 1MHz
Coss
Crss
Output Capacitance
620
Reverse Transfer Capacitance
Engry Releted Output Capacitance
Total Gate Charge at 10V
-
-
Coss(er)
Qg(tot)
Qgs
VDS = 50V, VGS = 0V
752
31
40
-
Gate to Source Gate Charge
Gate Charge Threshoid to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
9.7
VGS = 10V, VDS = 50V
I
D = 96A
Qgs2
Qgd
5.0
-
(Note 4)
-
-
7.5
-
ESR
f = 1MHz
0.97
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
18
22
29
8
46
54
68
26
ns
ns
ns
ns
VDD = 50V, ID = 96A
V
GS = 10V, RGEN = 4.7Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
96
384
1.3
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 96A
-
V
59
80
ns
nC
V
DD = 50V,VGS = 0V, ISD = 96A
dIF/dt = 100A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3 mH, I = 13.4 A, R = 25Ω, Starting T = 25°C
AS
G
J
3. I ≤ 96 A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Essentially Independent of Operating Temperature Typical Characteristics
©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. C0
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
500
VGS = 15.0V
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
175oC
100
25oC
10
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 10V
10
5
2. 250μs Pulse Test
1
2
3
4
5
6
7
0.1
1
5
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
18
500
*Note: TC = 25oC
16
175oC
100
VGS = 10V
12
25oC
10
8
*Notes:
1. VGS = 0V
VGS = 20V
2. 250μs Pulse Test
4
1
0
100
200
300
400
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
10000
VDS = 20V
Ciss
VDS = 50V
8
6
4
2
0
VDS = 80V
1000
100
10
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
*Note: ID = 96A
28
= C
gd
0
7
14
21
35
0.1
1
10
100
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. C0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
2.5
1.12
1.08
1.04
1.00
2.0
1.5
1.0
*Notes:
1. VGS = 0V
0.96
*Notes:
1. VGS = 10V
2. ID = 250μA
2. ID = 96A
0.92
0.5
-80
-80
-40
0
40
80
120 160 200
-40
0
40
80
120 160 200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
100
10μs
80
100
VGS= 10V
100μs
60
10
1ms
40
Operation in This Area
is Limited by R DS(on)
10ms
*Notes:
1
1. TC = 25oC
DC
20
2. TJ = 175oC
RθJC = 0.8oC/W
3. Single Pulse
0.1
0
25
50
75
100
125
150
175
1
10
100 200
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
Figure 12. Unclamped Inductive
Switching Capability
30
2.5
2.0
1.5
1.0
0.5
0.0
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1
1
10
100 300
0
20
40
60
80
100
tAV, TIME IN AVALANCHE (ms)
VDS, Drain to Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. C0
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
1
0.5
0.2
PDM
0.1 0.1
0.05
t1
t2
*Notes:
1. ZθJC(t) = 0.8oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
0.01
Single pulse
0.01
0.005
10-5
10-4
10-3
10-2
10-1
1
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. C0
5
www.fairchildsemi.com
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. C0
www.fairchildsemi.com
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. C0
www.fairchildsemi.com
7
Mechanical Dimensions
TO-220
©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. C0
www.fairchildsemi.com
8
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intended to be an exhaustive list of all such trademarks.
2Cool™
FPS™
Sync-Lock™
®*
®
tm
AccuPower™
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AX-CAP®*
FRFET®
PowerTrench®
PowerXS™
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CTL™
Current Transfer Logic™
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ESBC™
Programmable Active Droop™
QFET®
TinyCalc™
QS™
TinyLogic®
Quiet Series™
RapidConfigure™
™
TINYOPTO™
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ISOPLANAR™
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
TranSiC®
and Better™
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TRUECURRENT®*
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®
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Fairchild Semiconductor®
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. C0
9
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