FDP085N10A_F102 [FAIRCHILD]
Power Field-Effect Transistor, 96A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3;
| 型号： | FDP085N10A_F102 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 96A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：650K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2013
FDP085N10A
N-Channel PowerTrench MOSFET
100 V, 96 A, 8.5 mΩ
®
Features
Description
•
•
•
•
RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
Fast Switching Speed
Low Gate Charge, QG = 31 nC (Typ.)
High Performance Trench Technology for Extremely Low
RDS(on)
Applications
•
•
•
Synchronous Rectification for ATX / Server / Telecom PSU
•
•
High Power and Current Handling Capability
RoHS Compliant
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
D
G
G
D
S
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
Parameter
FDP085N10A_F102
Unit
V
Drain to Source Voltage
Gate to Source Voltage
100
±20
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
96
ID
Drain Current
A
68
IDM
Drain Current
(Note 1)
(Note 2)
(Note 3)
384
A
mJ
EAS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
269
6.0
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate Above 25oC
188
PD
Power Dissipation
1.25
-55 to +175
300
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
oC
Thermal Characteristics
Symbol
Parameter
Unit
FDP085N10A_F102
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.8
oC/W
62.5
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©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDP085N10A_F102
FDP085N10A
TO-220
Tube
N/A
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V,TC = 25oC
D = 250 μA, Referenced to 25oC
DS = 80 V, VGS = 0 V
100
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.07
V/oC
V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 80 V, TC = 150oC
500
±100
VGS = ±20 V, VDS = 0 V
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 96 A
2.0
-
4.0
8.5
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
7.35
72
V
DS = 10 V, ID = 96 A
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
2025
468
20
2695
pF
pF
pF
pF
nC
nC
nC
nC
Ω
VDS = 50 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Output Capacitance
620
Reverse Transfer Capacitance
Energy Releted Output Capacitance
-
-
Coss(er)
Qg(tot)
Qgs
VDS = 50 V, VGS = 0 V
752
31
Total Gate Charge at 10V
er
Gate to Source Gate Charge
40
-
9.7
VGS = 10 V, VDS = 50 V,
I
D = 96 A
Qgs2
Qgd
Gate Charge Threshoid to Plateau
Gate to Drain “Miller” Charge
5.0
-
(Note 4)
7.5
-
ESR
Equivalent Series Resistance (G-S)
f = 1 MHz
0.97
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
18
22
29
8
46
54
68
26
ns
ns
ns
ns
VDD = 50 V, ID = 96 A,
V
GS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
96
384
1.3
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 96 A
-
V
59
80
ns
nC
VDD = 50 V,VGS = 0 V, ISD = 96 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, I = 13.4 A, R = 25 Ω, starting T = 25°C.
AS
G
J
3. I ≤ 96 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
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©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
500
VGS = 15.0V
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
175oC
100
25oC
10
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 10V
10
5
2. 250μs Pulse Test
1
2
3
4
5
6
7
0.1
1
5
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
18
500
*Note: TC = 25oC
16
175oC
100
VGS = 10V
12
25oC
10
8
*Notes:
1. VGS = 0V
VGS = 20V
2. 250μs Pulse Test
4
1
0
100
200
300
400
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
10000
VDS = 20V
Ciss
VDS = 50V
8
6
4
2
0
VDS = 80V
1000
100
10
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
*Note: ID = 96A
28
= C
gd
0
7
14
21
35
0.1
1
10
100
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
2.5
1.12
1.08
1.04
1.00
2.0
1.5
1.0
*Notes:
1. VGS = 0V
0.96
*Notes:
1. VGS = 10V
2. ID = 250μA
2. ID = 96A
0.92
0.5
-80
-80
-40
0
40
80
120 160 200
-40
0
40
80
120 160 200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
100
10μs
80
100
VGS= 10V
100μs
60
10
1ms
40
Operation in This Area
is Limited by R DS(on)
10ms
*Notes:
1
1. TC = 25oC
DC
20
2. TJ = 175oC
RθJC = 0.8oC/W
3. Single Pulse
0.1
0
25
50
75
100
125
150
175
1
10
100 200
o
TC, Case Temperature [ C]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
Figure 12. Unclamped Inductive
Switching Capability
30
If R = 0
2.5
2.0
1.5
1.0
0.5
0.0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0
20
40
60
80
100
0.01
0.1
1
10
100 300
VDS, Drain to Source Voltage [V]
tAV, TIME IN AVALANCHE (ms)
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©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
4
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
1
0.5
0.2
PDM
t1
0.1 0.1
0.05
t2
*Notes:
1. ZθJC(t) = 0.8oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
0.01
Single pulse
0.01
0.005
10-5
10-4
10-3
10-2
10-1
1
t , Rectangular Pulse Duration [sec]
1
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©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
5
I
= const.
G
Figure 14. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
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©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
7
Mechanical Dimensions
Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3
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©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
8
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®*
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tm
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™
®
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®
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®
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and Better™
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®
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Saving our world, 1mW/W/kW at a time™
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®
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FACT
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Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
9
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