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FDP085N10A-F102 [ONSEMI]

N 沟道 PowerTrench® MOSFET 100V，96A，8.5mΩ;
FDP085N10A-F102
型号： FDP085N10A-F102
厂家： ONSEMI    ONSEMI
描述：

N 沟道 PowerTrench® MOSFET 100V，96A，8.5mΩ

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FDP085N10A  
®
N 沟道PowerTrench MOSFET  
100 V, 96 A, 8.5 mΩ  
特性  
•
描述  
RDS(on) = 7.35 mΩ( 典型值)@VGS = 10 V, ID = 96 A  
该 N 沟道 MOSFET 采用飞安森美半导体的 PowerTrench® 工艺  
生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开  
关性能而定制的。  
• 快速开关速度  
• 低栅极电荷, QG = 31 nC( 典型值)  
• 高性能沟槽技术可实现极低的RDS(on)  
• 高功率和高电流处理能力  
• 符合RoHS 标准  
应用  
• 用于ATX / 服务器/ 电信PSU 的同步整流  
• 电池保护电路  
• 电机驱动和不间断电源  
D
G
D
S
G
TO-220  
S
MOSFET 最大额定值TC = 25°C 除非另有说明。  
FDP085N10A-F102  
符号  
参数  
单位  
VDSS  
VGSS  
100  
±20  
96  
V
漏极－源极电压  
栅极－源极电压  
V
- 连续(TC = 25°C)  
- 连续(TC = 100°C)  
- 脉冲  
ID  
A
漏极电流  
68  
IDM  
384  
269  
6.0  
A
mJ  
漏极电流  
（注1）  
（注2）  
（注3）  
EAS  
dv/dt  
单脉冲雪崩能量  
二极管恢复dv/dt 峰值  
V/ns  
W
(TC = 25°C)  
188  
1.25  
PD  
功耗  
W/°C  
°C  
- 高于25°C 的功耗系数  
TJ, TSTG  
TL  
工作和存储温度范围  
-55 至+175  
300  
°C  
用于焊接的最大引脚温度，距离外壳1/8”，持续5 秒  
热性能  
FDP085N10A-F102  
符号  
RθJC  
参数  
结至外壳热阻最大值  
单位  
0.8  
°C/W  
RθJA  
62.5  
结至环境热阻最大值  
Publication Order Number:  
©2011 Semiconductor Components Industries, LLC  
November-2017, Rev. 3  
FDP085N10ACN/D  
封装标识与定购信息  
器件编号  
顶标  
FDP085N10A  
封装  
包装方法  
塑料管  
卷尺寸  
带宽  
数量  
FDP085N10A-F102  
TO-220  
N/A  
N/A  
50 个  
电气特性TC = 25°C 除非另有说明。  
符号  
参数  
测试条件  
最小值 典型值 最大值 单位  
关断特性  
BVDSS  
ID = 250 μA, VGS = 0 V,TC = 25°C  
ID = 250 μA, 参考25°C 数值  
100  
-
-
-
-
V
漏极－源极击穿电压  
ΔBVDSS  
/ ΔTJ  
0.07  
V/°C  
击穿电压温度系数  
VDS = 80 V, VGS = 0 V  
VDS = 80 V, TC = 150°C  
VGS = ±20 V, VDS = 0 V  
-
-
-
-
-
-
1
IDSS  
IGSS  
μA  
零栅极电压漏极电流  
500  
±100  
nA  
栅极- 体漏电流  
导通特性  
VGS(th)  
RDS(on)  
gFS  
VGS = VDS, ID = 250 μA  
VGS = 10 V, ID = 96 A  
VDS = 10 V, ID = 96 A  
2.0  
-
4.0  
8.5  
-
V
mΩ  
S
栅极阈值电压  
-
-
7.35  
72  
漏极至源极静态导通电阻  
正向跨导  
动态特性  
Ciss  
-
-
-
-
-
-
-
-
-
2025  
468  
20  
2695  
pF  
pF  
pF  
pF  
nC  
nC  
nC  
nC  
Ω
输入电容  
V
DS = 50 V, VGS = 0 V,  
Coss  
620  
输出电容  
f = 1 MHz  
Crss  
-
-
反向传输电容  
Coss(er)  
Qg(tot)  
Qgs  
V
V
DS = 50 V, VGS = 0 V  
GS = 10 V, VDS = 50 V,  
752  
31  
能量相关输出电容  
10 V 电压的栅极电荷总量  
栅极- 源极栅极电荷  
栅极平台电荷阈值  
栅极- 漏极“ 米勒” 电荷  
等效串联电阻(G-S)  
40  
-
9.7  
ID = 96 A  
Qgs2  
5.0  
-
Qgd  
（注4）  
7.5  
-
ESR  
f = 1 MHz  
0.97  
-
开关特性  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
18  
22  
29  
8
46  
54  
68  
26  
ns  
ns  
ns  
ns  
导通延迟时间  
导通上升时间  
关断延迟时间  
关断下降时间  
VDD = 50 V, ID = 96 A,  
VGS = 10 V, RG = 4.7 Ω  
（注4）  
漏极- 源极二极管特性  
IS  
-
-
-
-
-
-
-
96  
384  
1.3  
-
A
A
漏极- 源极二极管最大正向连续电流  
ISM  
VSD  
trr  
漏极- 源极二极管最大正向脉冲电流  
漏极- 源极二极管正向电压  
反向恢复时间  
VGS = 0 V, ISD = 96 A  
-
V
59  
80  
ns  
nC  
VDD = 50 V,VGS = 0 V, ISD = 96 A,  
dIF/dt = 100 A/μs  
Qrr  
-
反向恢复电荷  
注：  
1. 重复额定值：脉冲宽度受限于最大结温。  
2. L = 3 mH, I = 13.4 A, R = 25 Ω, 开始于T = 25°C。  
AS  
G
J
3. I ≤ 96 A, di/dt ≤ 200 A/μs, V ≤ BV  
, 开始于T = 25°C。  
SD  
DD  
DSS  
J
4. 典型特性本质上独立于工作温度。  
www.onsemi.com  
2
典型性能特征  
图1. 导通区域特性  
图2. 传输特性  
300  
500  
VGS = 15.0V  
10.0V  
8.0V  
6.5V  
6.0V  
5.5V  
5.0V  
100  
175oC  
100  
25oC  
10  
-55oC  
*Notes:  
1. 250μs Pulse Test  
2. TC = 25oC  
*Notes:  
1. VDS = 10V  
10  
2. 250μs Pulse Test  
1
2
5
3
4
5
6
7
0.1  
1
5
VGS, Gate-Source Voltage[V]  
VDS, Drain-Source Voltage[V]  
图3. 导通电阻变化与漏极电流和栅极电压的关系  
图4. 体二极管正向电压变化与源极电流  
和温度的关系  
18  
500  
*Note: TC = 25oC  
16  
175oC  
100  
VGS = 10V  
12  
25oC  
10  
8
*Notes:  
1. VGS = 0V  
VGS = 20V  
2. 250μs Pulse Test  
4
1
0
100  
200  
300  
400  
0.3  
0.6  
0.9  
1.2 1.5  
VSD, Body Diode Forward Voltage [V]  
ID, Drain Current [A]  
图5. 电容特性  
图6. 栅极电荷特性  
10  
10000  
VDS = 20V  
DS = 50V  
DS = 80V  
Ciss  
V
V
8
6
4
2
0
1000  
Coss  
*Note:  
1. VGS = 0V  
100  
10  
Crss  
2. f = 1MHz  
C
C
C
= C + C (C = shorted)  
gs gd ds  
iss  
= C + C  
ds gd  
oss  
rss  
*Note: ID = 96A  
28 35  
= C  
gd  
0
7
14  
21  
0.1  
1
10  
100  
Qg, Total Gate Charge [nC]  
VDS, Drain-Source Voltage [V]  
www.onsemi.com  
3
典型性能特性 （接上页）  
图7. 击穿电压变化与温度的关系  
图8. 导通电阻变化与温度的关系  
2.5  
1.12  
1.08  
1.04  
1.00  
0.96  
0.92  
2.0  
1.5  
1.0  
0.5  
*Notes:  
1. VGS = 0V  
*Notes:  
1. VGS = 10V  
2. ID = 250μA  
2. ID = 96A  
-80  
-40  
0
40  
80  
120 160 200  
-80  
-40  
0
40  
80  
120 160 200  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
图9. 最大安全工作区  
图10. 最大漏极电流与壳温的关系  
1000  
100  
10μs  
80  
100  
10  
VGS= 10V  
100μs  
60  
40  
20  
0
1ms  
Operation in This Area  
is Limited by R DS(on)  
10ms  
DC  
*Notes:  
1. TC = 25oC  
2. TJ = 175oC  
1
RθJC = 0.8oC/W  
3. Single Pulse  
0.1  
25  
50  
75  
100  
125  
150  
175  
1
10  
VDS, Drain-Source Voltage [V]  
100 200  
TC, Case Temperature [oC]  
图11. Eoss 和漏极- 源极电压的关系  
图12. 非箝位电感开关能力  
30  
If R = 0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)  
If R = 0  
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]  
10  
STARTING TJ = 25oC  
STARTING TJ = 150oC  
1
0.01  
0
20  
40  
60  
80  
100  
0.1  
1
10  
100 300  
VDS, Drain to Source Voltage [V]  
tAV, TIME IN AVALANCHE (ms)  
www.onsemi.com  
4
典型性能特性 （接上页）  
图13. 瞬态热响应曲线  
1
0.5  
0.2  
PDM  
t1  
0.1 0.1  
0.05  
t2  
*Notes:  
1. ZθJC(t) = 0.8oC/W Max.  
2. Duty Factor, D= t1/t2  
3. TJM - TC = PDM * ZθJC(t)  
0.02  
0.01  
Single pulse  
0.01  
0.005  
10-5  
10-4  
10-3  
10-2  
10-1  
1
t
，矩形脉冲持续时间[ 秒]  
1
www.onsemi.com  
5
I
= 常量  
G
图14. 栅极电荷测试电路与波形  
RL  
VDS  
90%  
VDS  
VDD  
VGS  
RG  
10%  
VGS  
DUT  
V
GS  
td(on)  
tr  
td(off)  
tf  
t on  
t off  
图15. 阻性开关测试电路与波形  
VGS  
图16. 非箝位电感开关测试电路与波形  
www.onsemi.com  
6
+
DUT  
VDS  
_
I SD  
L
Driver  
RG  
Same Type  
as DUT  
VDD  
VGS  
• dv/dt controlled by RG  
• ISD controlled by pulse period  
Gate Pulse Width  
--------------------------  
VGS  
D =  
Gate Pulse Period  
10V  
( Driver )  
IFM , Body Diode Forward Current  
I SD  
di/dt  
( DUT )  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VSD  
VDS  
( DUT )  
VDD  
Body Diode  
Forward Voltage Drop  
图17. 二极管恢复dv/dt 峰值测试电路与波形  
www.onsemi.com  
7
机械尺寸  
图18. TO-220 模塑3 引线Jedec 变体AB (Delta)  
封装图纸是作为一项服务提供给考虑安森美半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版  
本或日期，如有疑问，请联系安森美半导体代表核实或获得最新版本。封装规格说明并不扩大安森美半导体全球范围内的条款与条件，尤  
其是其中涉及安森美半导体产品保修的部分。  
www.onsemi.com  
8
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