FDP100N10 [ONSEMI]
N 沟道 PowerTrench® MOSFET 100V, 75A, 10mΩ;
| 型号： | FDP100N10 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 100V, 75A, 10mΩ 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：422K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年 1 月
FDP100N10
®
N 沟道 PowerTrench MOSFET
100 V， 75 A， 10 mΩ
特性
说明
此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺
生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越
开关性能而定制的。
•
•
•
•
•
•
RDS(on) = 8.2 mΩ (Typ.)@VGS = 10 V, ID = 75 A
快速开关速度
低栅极电荷
应用
高性能沟道技术可实现极低的 RDS(on)
高功率和高电流处理能力
符合 RoHS 标准
•
•
•
•
用于 ATX/ 服务器 / 通信 PSU 的同步整流
电池保护电路
电机驱动和不间断电源
微型光伏逆变器
D
G
D
S
G
TO-220
S
MOSFET 最大额定值 TC =25°C 除非另有说明。
FDP100N10
符号
VDSS
VGSS
ID
参数
单位
V
100
±20
75
漏极－源极电压
栅极－源极电压
漏极电流
V
A
- 连续 (TC=75°C)
- 脉冲
IDM
（说明 1）
300
A
漏极电流
EAS
dv/dt
365
mJ
V/ns
W
单脉冲雪崩能量
峰值二极管恢复 dv/dt
（说明 2）
（说明 3）
6
208
(TC = 25°C)
PD
功耗
- 降额 25°C 以上
1.4
W/°C
°C
TJ, TSTG
TL
-55 至 +175
300
工作和存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
°C
热性能
FDP100N10
0.72
符号
RθJC
参数
结至外壳热阻最大值
单位
°C/W
RθJA
62.5
结至环境热阻最大值
www.fairchildsemi.com
1
©2007 飞兆半导体公司
FDP100N10 Rev. C4
封装标识与定购信息
器件编号
FDP100N10
顶标
FDP100N10
封装
TO-220
包装方法
塑料管
卷尺寸
不适用
带宽
不适用
数量
50 个
电气特性 TC =25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 μA, VGS = 0 V, TJ = 25°C
D = 250 μA，参考条件是 25°C
100
-
-
-
-
V
漏极－源极击穿电压
击穿电压温度系数
ΔBVDSS
/ ΔTJ
I
0.1
V/°C
VDS = 100 V, VGS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
μA
零栅极电压漏极电流
VDS = 100 V, VGS = 0 V, TJ = 150°C
VGS = ±20 V, VDS = 0 V
500
±100
nA
栅极 - 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 37.5 A
2.5
-
4.5
10
-
V
mΩ
S
栅极阈值电压
-
-
8.2
110
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
5500
530
220
76
7300
710
325
100
-
pF
pF
pF
nC
nC
输入电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Qg(tot)
Qgs
输出电容
反向传输电容
10V 的栅极电荷总量
栅极 - 源极栅极电荷
VDS = 50 V, ID = 75 A,
30
V
GS = 10 V
Qgd
-
20
-
nC
栅漏极 “ 米勒 ” 电荷
（说明 4）
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
70
150
540
260
240
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 50 V, ID = 75 A,
GS = 10 V, RG = 25 Ω
265
125
115
V
（说明 4）
漏源极二极管特性
IS
-
-
-
-
-
-
-
75
300
1.25
-
A
A
漏源极二极管最大正向连续电流
漏源极二极管最大正向脉冲电流
漏源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 75 A
-
V
71
164
ns
nC
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/μs
Qrr
注意：
-
反向恢复电荷
1: 重复额定值：脉冲宽度受限于最大结温。
2: L = 0.13 mH，I = 75 A， V = 25 V, R = 25 Ω，启动 = 25°C。
AS
DD
G
3:
I
≤ 75 A， di/dt ≤ 200 A/μs， V ≤ BV
，开始 T =25°C。
DSS J
SD
DD
4: 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2007 飞兆半导体公司
FDP100N10 Rev. C4
2
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
1000
500
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
10
1
100
150oC
-55oC
25oC
10
5
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
2
4
6
8
10
12
0.1
1
5
VGS,Gate-Source Voltage[V]
VDS,Drain-Source Voltage[V]
图 3. 导通电阻变量与漏极电流和栅极电压的关系
图 4. 体二极管正向电压变量与源电流的关系和
温度
1000
0.020
0.015
100
10
1
150oC
VGS = 10V
0.010
25oC
VGS = 20V
0.005
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
2. 250μs Pulse Test
0.000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100 150 200 250 300 350
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
图 5. 电容特性
8000
图 6. 栅极电荷特性
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 80V
= C + C
ds gd
oss
rss
VDS = 50V
= C
gd
VDS = 25V
8
6000
4000
2000
0
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
6
4
2
0
Coss
Crss
*Note: ID = 75A
60 75
0.1
1
10
30
0
15
30
45
90
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
©2007 飞兆半导体公司
FDP100N10 Rev. C4
3
典型性能特征 （接上页）
图 7. 击穿电压变量与温度的关系
图 8. 导通电阻变量与温度的关系
3.0
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250μA
2. ID = 75A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
图 9. 最大安全工作区
图 10. 最大漏极电流与壳体温度的关系
100
500
100
80
60
40
20
0
100 μs
10
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
1
1 ms
TJ = MAX RATED
RθJc = 0.72 oC/W
Tc = 25 oC
10 ms
100 ms
DC
0.1
0.1
25
50
75
100
125
150
175
1
10
100
400
o
TC, Case Temperature [ C]
VDS, DRAIN to SOURCE VOLTAGE (V)
图 11. 瞬态热响应曲线
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
t1
t2
0.01
0.01
*Notes:
Single pulse
1. ZθJC(t) = 0.72oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
1E-3
10-5
10-4
10-3
10-2
10-1
100
t
，矩形脉冲时间 [ 秒 ]
1
www.fairchildsemi.com
©2007 飞兆半导体公司
FDP100N10 Rev. C4
4
I = 恒流
G
图 12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 13. 阻性开关测试电路与波形
VGS
图 14. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
©2007 飞兆半导体公司
FDP100N10 Rev. C4
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 15. 峰值二极管恢复 dv/dt 测试电路与波形
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©2007 飞兆半导体公司
FDP100N10 Rev. C4
6
机械尺寸
SUPPLIER "B" PACKAGE
SHAPE
Ø4.00
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
5°
3°
5°
3°
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATIONAB
B) ALL DIMENSIONS AREINMILLIMETERS.
C) DIMENSIONS COMMONTOALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATIONOF MOLDEDFEATUREMAYVARY
(LOWERLEFT CORNER, LOWERCENTER
ANDCENTEROF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONSASBELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV8
H) PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIERDEPENDENT MOLDLOCKINGHOLES
INHEATSINK.
J) FAIRCHILD SEMICONDUCTOR
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
图 16. TO-220，模塑， 3 引脚， Jedec 变量 AB
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞
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随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
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©2007 飞兆半导体公司
FDP100N10 Rev. C4
7
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