FDPC5030SG [ONSEMI]
30V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET;
| 型号： | FDPC5030SG |
| 厂家： | 
ONSEMI |
| 描述： | 30V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET |
| 文件： | 总13页 (文件大小：481K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Dual N‐Channel,
Asymmetric,
POWERTRENCHꢀ Power
Clip 30 V
FDPC5030SG
www.onsemi.com
General Description
ELECTRICAL CONNECTION
This device includes two specialized N-Channel MOSFETs in
a dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFETt (Q2) have
been designed to provide optimal power efficiency.
Features
Q1: N-Channel
• Max R
• Max R
= 5.0 mW at V = 10 V, I = 17 A
GS D
DS(on)
= 6.5 mW at V = 4.5 V, I = 14 A
N-Channel MOSFET
DS(on)
GS
D
Q2: N-Channel
PIN1
• Max R
= 2.4 mW at V = 10 V, I = 25 A
GS D
DS(on)
• Max R
= 3.0 mW at V = 4.5 V, I = 22 A
GS D
DS(on)
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses.
• MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing.
• RoHS Compliant
Top View
Bottom View
Power Clip 56
(PQFN8 5x6)
CASE 483AR
PIN ASSIGNMENT
Applications
• Computing
LSG
SW
HSG
• Communications
GR
V+
V+
• General Purpose Point of Load
SW
SW
Table 1. PIN DESCRIPTION
*PAD10 V+(HSD)
Pin
Name
HSG
Description
High Side Gate
1
2
MARKING DIAGRAM
GR
Gate Return
3, 4, 10
V+(HSD)
SW
High Side Drain
$Y&Z&3&K
FDPC
5030SG
5, 6, 7
Switching Node, Low Side Drain
Low Side Gate
8
9
LSG
GND (LSS)
Low Side Source
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FDPC5030SG
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2021 − Rev. 6
FDPC5030SG/D
FDPC5030SG
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
A
Symbol
Parameter
Drain to Source Voltage
Q1
30
Q2
30
Unit
V
V
DS
Bvdsst
V
Bvdsst (Transient) < 100 ns
Gate to Source Voltage
Drain Current
36
36
V
+/−20
+/−12
V
GS
I
D
A
− Continuous (T = 25°C) (Note 5)
56
84
C
− Continuous (T = 100°C) (Note 5)
35
17 (Note 1a)
227
53
25 (Note 1b)
503
C
− Continuous (T = 25°C)
A
− Pulsed (T = 25°C) (Note 4)
A
E
Single Pulsed Avalanche Energy (Note 3)
54
96
mJ
W
AS
P
Power Dissipation for Single Operation
D
23
25
(T = 25°C)
C
2.1 (Note 1a)
1.0 (Note 1c)
2.3 (Note 1b)
1.1 (Note 1d)
(T = 25°C)
A
(T = 25°C)
A
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Q1
Q2
Unit
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
5.6
4.9
_C/W
_C/W
_C/W
q
JC
R
60 (Note 1a)
130 (Note 1c)
55 (Note 1b)
120 (Note 1d)
q
JA
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device
Top Marking
Package
Reel Size
Tape Width
Quantity
FDPC5030SG
FDPC5030SG
Power Clip 56
13″
12 mm
3,000 Units
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
D
I
D
= 250 mA, V = 0 V
Q1
Q2
30
30
−
−
−
−
V
DSS
GS
= 1 mA, V = 0 V
GS
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I
I
= 250 mA, referenced to 25_C
Q1
Q2
−
−
15
16
−
−
mV/_C
mA
DSS
J
D
D
= 10 mA, referenced to 25_C
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
Q1
Q2
−
−
−
−
1
500
DSS
DS
DS
GS
= 24 V, V = 0 V
GS
I
Gate to Source Leakage Current,
Forward
V
GS
V
GS
=
=
20 V, V = 0 V
Q1
Q2
−
−
−
−
100
100
nA
nA
GSS
DS
12 V, V = 0 V
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
V
GS
= V , I = 250 mA
Q1
Q2
1.0
1.0
1.7
1.6
3.0
3.0
V
DS
D
= V , I = 1 mA
DS
D
DV
/DT Gate to Source Threshold Voltage
I
D
= 1 mA, referenced to 25_C
= 10 mA, referenced to 25_C
Q1
Q2
−
−
−5
−3
−
−
mV/_C
GS(th)
J
D
Temperature Coefficient
I
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2
FDPC5030SG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
ON CHARACTERISTICS
R
Drain to Source On Resistance
V
V
V
= 10 V, I = 17 A
Q1
−
−
−
4.1
5.4
5.7
5.0
6.5
7.0
mW
DS(on)
GS
GS
GS
D
= 4.5 V, I = 14 A
D
= 10 V, I = 17 A, T =125_C
D
J
V
GS
V
GS
V
GS
= 10 V, I = 25 A
Q2
−
−
−
1.9
2.4
2.7
2.4
3.0
3.4
D
= 4.5 V, I = 22 A
D
= 10 V, I = 25 A,T =125_C
D
J
g
FS
Forward Transconductance
V
DS
V
DS
= 5 V, I = 17 A
Q1
Q2
−
−
93
139
−
−
S
D
= 5 V, I = 25 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1:
DS
f = 1 MHZ
Q1
Q2
−
−
1224
2730
1715
3825
pF
pF
pF
W
iss
V
= 15 V, V = 0 V,
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q1
Q2
−
−
397
801
560
1125
oss
Q2:
V
DS
= 15 V, V = 0 V,
GS
f = 1 MHZ
C
Q1
Q2
−
−
42
72
60
100
rss
R
Q1
Q2
0.1
0.1
0.5
1.1
1.5
2.2
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Q1:
DD
Q1
Q2
−
−
8
16
19
ns
ns
ns
ns
nC
d(on)
V
= 15 V, I = 17 A,
10
D
R
= 6 W
GEN
t
r
Rise Time
Q1
Q2
−
−
2
4
10
10
Q2:
V
= 15 V, I = 25 A,
D
= 6 W
DD
GEN
R
t
Turn-Off Delay Time
Fall Time
Q1
Q2
−
−
18
30
33
48
d(off)
t
f
Q1
Q2
−
−
2
3
10
10
Q
Q
Total Gate Charge
V
GS
= 0 V to 10 V
Q1
Q2
−
−
17
39
24
55
g
g
Q1: V = 15 V, I = 17 A
DD
D
Q2: V = 15 V, I = 25 A
DD
D
Total Gate Charge
V
GS
= 0 V to 4.5 V
Q1
Q2
−
−
8
18
11
26
nC
Q1: V = 15 V, I = 17 A
DD
D
Q2: V = 15 V, I = 25 A
DD
D
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q1: V = 15 V, I = 17 A
Q1
Q2
−
−
3.1
6.1
−
−
nC
nC
gs
DD
D
Q2: V = 15 V, I = 25 A
DD
D
Q
Q1: V = 15 V, I = 17 A
Q1
Q2
−
−
2.0
4.3
−
−
gd
DD
D
Q2: V = 15 V, I = 25 A
DD
D
SOURCE-DRAIN DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 17 A (Note 2)
Q1
Q2
−
−
−
0.8
0.8
1.2
1.2
V
SD
GS
GS
S
= 0 V, I = 25 A (Note 2)
S
t
Reverse Recovery Time
Q1
Q1
Q2
23
27
37
44
ns
nC
rr
I = 17 A, di/dt = 100 A/ms
F
Q2
Q
Reverse Recovery Charge
Q1
Q2
8
31
16
50
rr
I = 25 A, di/dt = 230 A/ms
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
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3
FDPC5030SG
a) 60°C/W when mounted on
b) 55°C/W when mounted on
2
2
a 1 in pad of 2 oz copper.
a 1 in pad of 2 oz copper.
c) 130°C/W when mounted on
d) 120°C/W when mounted on
a minimum pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Q1: E of 54 mJ is based on starting T = 25_C; L = 3 mH, I = 6 A, V = 30 V. V = 10 V, 100% tested at L = 0.1 mH, I = 20 A.
AS
J
AS
DD
GS
AS
Q2: E of 96 mJ is based on starting T = 25_C; L = 3 mH, I = 8 A, V = 30 V. V = 10 V, 100% tested at L = 0.1 mH, I = 27 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id refer to Figure NO TAG and Figure NO TAG SOA graphs for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro-mechanical application board design.
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4
FDPC5030SG
TYPICAL CHARACTERISTICS (Q1 N-Channel)
(T = 25°C unless otherwise noted)
J
60
45
30
15
0
6.0
VGS = 10 V
VGS = 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS = 4.5 V
VGS = 3 V
V
GS = 3.5 V
4.5
3.0
1.5
0.0
VGS = 3.5 V
VGS = 3 V
VGS = 4.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 10 V
0
15
30
45
60
0.0
0.2
0.4
0.6
0.8
1.0
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
40
ID = 17 A
VGS = 10 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
30
ID = 17 A
20
10
0
TJ = 125 o
C
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATUREo(C)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs. Junction
Temperature
Figure 4. Normalized On Resistance vs. Gate to
Source Voltage
60
60
VGS = 0 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
10
1
45
VDS = 5 V
30
15
0
TJ = 150 o
C
TJ = 25 o
C
0.1
0.01
TJ = 150 o
C
TJ = 25 o
C
TJ = −55oC
T
J = −55oC
0.001
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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FDPC5030SG
TYPICAL CHARACTERISTICS (Q1 N-Channel)
(T = 25°C unless otherwise noted)
J
10
8
3000
1000
ID = 17 A
Ciss
Coss
VDD = 10 V
6
VDD = 15 V
VDD = 20 V
100
4
Crss
2
f = 1 MHz
GS = 0 V
V
0
10
0.1
0
4
8
12
16
20
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
60
30
10
45
VGS = 10 V
30
TJ = 25 oC
VGS = 4.5 V
TJ = 125 o
C
15
R
qJC = 5.6 oC/W
0
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
TC, CASE TEMPERATUREo(C)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
5000
500
SINGLE PULSE
qJC = 5.6oC/W
R
100
10
1
C = 25 oC
1000
100
10
T
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1 ms
10 ms
DC
R
qJC = 5.6oC/W
C = 25 oC
CURVE BENT TO
MEASURED DATA
T
0.1
0.1
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
1
10
80
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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6
FDPC5030SG
TYPICAL CHARACTERISTICS (Q1 N-Channel)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
SINGLE PULSE
NOTES:
Z
(t) = r(t) x R
o
qJC
qJC
R
= 5.6 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
t, RECTANGULAR PULSE DURATION (sec)
10−2
10−1
1
Figure 13. Junction−to−Case Transient Thermal Response Curve
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FDPC5030SG
TYPICAL CHARACTERISTICS (Q2 N-Channel)
(T = 25°C unless otherwise noted)
J
120
90
60
30
0
10
8
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 2.5 V
V
GS = 4.5 V
6
VGS = 3.5 V
VGS = 3 V
4
V
GS = 3 V
VGS = 3.5 V
2
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
VGS = 4.5 V
24 48
ID, DRAIN CURRENT (A)
V
GS = 10 V
0
0
1
2
3
0
72
96
120
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On−Region Characteristics
Figure 15. Normalized on−Resistance vs. Drain
Current and Gate Voltage
20
1.6
I
D = 25 A
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
15
ID = 25 A
10
TJ = 125 o
C
5
0
TJ = 25 o
C
2
3
4
5
6
7
8
9
10
−75 −50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATUREo(C)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 16. Normalized On−Resistance vs. Junction
Figure 17. On−Resistance vs. Gate to Source
Temperature
Voltage
120
200
100
PULSE DURATION = 80ms
VGS = 0 V
DUTY CYCLE = 0.5% MAX
100
V
DS = 5 V
10
1
TJ = 125 o
C
80
60
40
20
0
TJ = 125 o
C
TJ = 25 o
C
T
J = 25 o
C
0.1
TJ = −55oC
T
J = −55oC
0.01
0.001
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode Forward Voltage
vs. Source Current
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FDPC5030SG
TYPICAL CHARACTERISTICS (Q2 N-Channel)
(T = 25°C unless otherwise noted)
J
10000
1000
100
10
8
ID = 25 A
Ciss
VDD = 15 V
VDD = 20 V
VDD = 10 V
6
Coss
4
f = 1 MHz
GS = 0 V
Crss
2
V
10
0.1
0
1
10
30
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs. Drain to Source
Voltage
100
100
10
1
80
60
40
20
0
VGS = 10 V
TJ = 25 o
C
TJ = 100 o
C
VGS = 4.5 V
TJ = 125 o
C
R
qJC = 4.9 oC/W
0.001 0.01
t
0.1
1
10
100
25
50
75
100
125
150
TC, CASE TEMPERATURE o(C)
AV, TIME IN AVALANCHE (ms)
Figure 22. Unclamped Inductive Switching
Capability
Figure 23. Maximum Continuous Drain Current
vs. Case Temperature
10000
1000
SINGLE PULSE
qJC = 4.9 oC/W
R
TC = 25 oC
100
10
1
10 ms
1000
100
10
100 ms
THIS AREA IS
LIMITED BY r DS(on)
1 ms
10 ms
SINGLE PULSE
T
J = MAX RATED
qJC = 4.9oC/W
C = 25 oC
R
DC
CURVE BENT TO
MEASURED DATA
T
0.1
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
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FDPC5030SG
TYPICAL CHARACTERISTICS (Q2 N-Channel)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
NOTES:
Z
(t) = r(t) x R
o
qJC
qJC
SINGLE PULSE
R
= 4.9 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
t, RECTANGULAR PULSE DURATION (sec)
10−2
10−1
1
Figure 26. Junction−to−Case Transient Thermal Response Curve
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FDPC5030SG
TYPICAL CHARACTERISTICS (continued)
SyncFET Schottky Body Diode Characteristics
ON’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode
in parallel with a MOSFET. Figure 27 shows the reverse
recovery characteristic of the FDPC5030SG.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
10−2
30
25
TJ = 125 o
C
10−3
10−4
10−5
10−6
20
di/dt = 230 A/ms
15
TJ = 100 o
C
10
5
TJ = 25 o
C
0
−5
0
100
200
TIME (ns)
300
400
500
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 27. FDPC5030SG SyncFETꢁ Body Diode
Figure 28. SyncFETꢁ Body Diode Reverse
Leakage vs. Drain−Source Voltage
Reverse Recovery Characteristics
POWERTRENCH is a registered trademark and SyncFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its
subsidiaries in the United States and/or other countries.
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11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5x6, 1.27P
CASE 483AR
ISSUE A
DATE 21 MAY 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13666G
PQFN8 5x6, 1.27P
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相关型号：
FDPC8012S
Small Signal Field-Effect Transistor, 13A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA, 3.30 X 3.30 MM, ROHS COMPLIANT, POWER CLIP 33, 8 PIN
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FDPC8014S
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