FDS6673BZ [ONSEMI]
P 沟道，PowerTrench® MOSFET，-30V，14.5A，7.8mΩ;
| 型号： | FDS6673BZ |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-30V，14.5A，7.8mΩ |
| 文件： | 总7页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel,
POWERTRENCH)
-30 V, -14.5 A, 7.8 mW
SOIC8
CASE 751EB
FDS6673BZ
General Description
D
D
D
D
5
6
7
8
G
S
S
S
4
3
2
1
This P−Channel MOSFET is produced using onsemi’s advanced
Power Trench process that has been especially tailored to minimize the
on−state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and Portable
Battery Packs.
Features
MARKING DIAGRAM
• Max R
• Max R
= 7.8 mW @ V = −10 V, I = −14.5 A
GS D
DS(on)
= 12 mW @ V = −4.5 V, I = −12 A
DS(on)
GS
D
• Extended V Range (−25 V) for Battery Applications
GS
FDS6673BZ
ALYW
• HBM ESD Protection Level of 6.5 kV Typical (Note 3)
• High Performance Trench Technology for Extremely Low R
• High Power and Current Handling Capability
DS(on)
• Pb−Free, Halide Free and RoHS Compliant
FDS6673BZ = Specific Device Code
ABSOLUTE MAXIMUM RATINGS
A
A
= Assembly Side
T = 25°C unless otherwise noted.
L
YW
= Wafer Lot Number
= Assembly Start Week
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
−30
Unit
V
V
DS
V
GS
ORDERING INFORMATION
25
V
†
I
Drain Current
− Continuous (Note 1a)
− Pulsed
A
Device
FDS6673BZ
Package
Shipping
2500 /
Tape & Reel
D
−14.5
−75
SOIC8
(Pb−Free/
Halide Free)
P
Maximum Power dissipation
(Note 1a)
(Note 1b)
(Note 1c)
W
D
2.5
1.2
1.0
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance,
Junction to Ambient (Note 1a)
50
°C/W
q
JA
R
Thermal Resistance,
Junction to Case (Note 1)
25
°C/W
q
JC
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
September, 2022 − Rev. 5
FDS6673BZ/D
FDS6673BZ
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 mA,
Referenced to 25°C
−
−20
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
V
= −24 V, V = 0 V
−
−
−
−
−1
mA
mA
DSS
DS
GS
I
=
25 V, V = 0 V
10
GSS
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−1
−1.9
−3
V
GS(th)
DS
GS D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, Referenced to 25°C
−
8.1
−
mV/°C
DVGS(th)
DTJ
D
R
Drain to Source On–Resistance
I
I
I
= −14.5 A, V = −10 V,
−
−
−
6.5
9.6
9.7
7.8
12
12
mW
DS(on)
D
D
D
GS
= −12 A, V = −4.5 V
GS
= −14.5 A, V = −10 V,
GS
T = 125°C
J
g
FS
Forward Transconductance
V
DS
= −5 V, I = −14.5 A
−
60
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −15 V, V = 0 V,
−
−
−
3500
600
4700
800
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
600
900
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Rise Time
V
V
= −15 V, I = −1 A,
−
−
−
−
−
14
16
26
29
ns
d(on)
DD
GS
D
= −10 V, R = 6 W
GS
t
r
t
Turn–Off Delay Time
Fall Time
225
105
88
306
167
124
d(off)
t
f
Q
Total Gate Charge
V
DS
V
GS
= −15 V, I = −14.5 A,
nC
nC
g
D
= −10 V
Q
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DS
V
GS
= −15 V, I = −14.5 A,
−
−
−
46
8
65
−
g
D
= −5 V
Q
gs
Q
23.5
−
gd
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = −2.1 A
−
−
−
−0.7
−
−1.2
45
V
SD
GS
S
t
I = 14.5 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
I = 14.5 A, di/dt = 100 A/ms
F
−
34
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a) 50°C/W (10 sec) when
b) 105°C/W when
mounted on a 0.04 in
pad of 2 oz. copper.
b) 125°C/W when
mounted on a minimum
pad.
2
2
mounted on a 1 in pad
of 2 oz. copper.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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2
FDS6673BZ
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
3.8
V
GS
= −3.5 V
3.4
V
= −4 V
GS
3.0
2.6
2.2
V
GS
= −4 V
V
GS
= −10 V
V
V
= −5 V
GS
= −4.5 V
GS
V
= −3.5 V
GS
V
GS
= −4.5 V
1.8
1.4
V
GS
= −5 V
1.0
0.6
V
GS
= −3 V
V
GS
= −10 V
0
1
2
3
4
10
20
30
40
50
60
70
80
−V , Drain−Source Voltage (V)
DS
−I , Drain Current (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.5
25
20
I
D
= −7 A
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= −14.5 A
D
1.4
1.3
= −10 V
GS
1.2
1.1
1.0
0.9
T = 150°C
15
10
5
J
T = 25°C
J
0.8
0.7
0.6
0
−80
−40
0
40
80
120
160
2
4
6
8
10
T , Junction Temperature (5C)
J
−V , Gate to Source Voltage (V)
GS
Figure 3. Normalized On−Resistance vs. Junction
Figure 4. On−Resistance vs. Gate to Source
Temperature
Voltage
100
10
1
80
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 0 V
V
DS
= −6 V
60
40
T = 150°C
J
T = 25°C
J
T = 25°C
J
0.1
T = 150°C
J
T = −55°C
J
20
0
0.01
T = −55°C
J
0.001
2.0
2.5
3.0
3.5
4.0
4.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
−V , Body Diode Forward Voltage (V)
SD
−V , Gate to Source Voltage (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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3
FDS6673BZ
TYPICAL CHARACTERISTICS (continued)
10
8
6000
C
iss
C
oss
V
DD
= −10 V
V
DD
= −15 V
C
rss
6
1000
V
DD
= −20 V
4
2
f = 1 MHz
= 0 V
V
GS
0
100
40
0
20
40
60
80
100
0.1
1
10
30
Q , Gate Charge (nC)
−V , Drain to Source Voltage (V)
g
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
1000
100
10
T = 25°C
J
T = 150°C
J
10
1
0.1
T = 25°C
J
T = 125°C
J
0.01
0.001
0.0001
1
0.01
0
5
10
15
20
25
30
35
0.1
1
10
100
1000
−V (V)
GS
t , Time in Avalanche (ms)
AV
Figure 9. Ig vs. VGS
Figure 10. Unclamped Inductive Switching Capability
16
100
100 ms
10
12
8
1 ms
V
GS
= −10 V
10 ms
This area
is limited by
1
V
GS
= −4.5 V
100 ms
R
DS(on)
1 s
Single Pulse
T = Max Rated
0.1
4
10 s
DC
J
R
= 125°C
q
JA
T
= 25°C
C
0
0.01
25
50
75
100
125
150
0.01
0.1
1
10
100
500
T , Ambient Temperature (5C)
A
−V , Drain to Source Voltage (V)
DS
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 12. Single Pulse Maximum Power Dissipation
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4
FDS6673BZ
TYPICAL CHARACTERISTICS (continued)
10000
1000
100
V
GS
= −10 V
10
Single Pulse
= 125°C/W
R
q
JA
T = 25°C
A
1
5
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Width (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
0.05
0.1
0.02
P
DM
t
1
0.01
0.01
t
2
0.001
NOTES:
Duty Factor D = t / t
Single Pulse
= 125°C/W
1
2
R
q
JA
PEAK T = P
× Z
× R
+ T
JA A
q
q
J
DM
JA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 14. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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