FDS86140 [ONSEMI]
N 沟道 PowerTrench® MOSFET 100V，11.2A，9.8mΩ;
| 型号： | FDS86140 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 100V，11.2A，9.8mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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March 2011
FDS86140
N-Channel PowerTrench® MOSFET
100 V, 11.2 A, 9.8 mΩ
Features
General Description
Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A
been optimized for rDS(on)
ruggedness.
, switching performance and
High performance trench technologh for extremely low rDS(on)
High power and current handing capability in a widely used
surface mount package
Applications
100% UIL Tested
RoHS Compliant
DC/DC Converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Swith for 24 V and 48 V Systems
High Voltage Synchronous Rectifier
D
D
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
D
D
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
100
±20
11.2
50
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
ID
A
mJ
W
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
264
5.0
TC = 25 °C
TA = 25 °C
(Note 1)
Power Dissipation
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
25
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
FDS86140
FDS86140
SO-8
13’’
2500 units
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
70
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2
2.7
-11
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 11.2 A
GS = 6 V, ID = 9 A
mV/°C
8.1
9.8
16
V
10.8
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 10 V, ID = 11.2 A,
TJ = 125 °C
13.1
35
17
gFS
VDS = 10 V, ID = 11.2 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1940
440
20
2580
585
30
pF
pF
pF
Ω
VDS = 50 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
13.7
5.6
23
25
11
38
10
41
23
ns
ns
VDD = 50 V, ID = 11.2 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
4.8
29
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 5 V
nC
nC
nC
nC
Qg
16.5
8.0
6.5
VDD = 50 V,
D = 11.2 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 11.2 A
(Note 2)
(Note 2)
0.8
0.7
53
1.3
1.2
85
VSD
Source-Drain Diode Forward Voltage
V
VGS = 0 V, IS = 2 A
trr
Reverse Recovery Time
ns
IF = 11.2 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
59
94
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θJA
θJC
θCA
the user's board design.
a) 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C, L = 1 mH, I = 23 A, V = 90 V, V = 10 V.
J
AS
DD
GS
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
50
4
3
2
1
0
VGS = 10 V
VGS = 4.5 V
VGS = 7 V
40
VGS = 6 V
VGS = 5 V
VGS = 5 V
30
VGS = 7 V
VGS = 6 V
20
VGS = 4.5V
10
VGS = 10 V
PULSE DURATION = 80 μs
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
50
2.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 11.2 A
GS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
40
30
20
10
0
ID = 11.2 A
TJ = 125 o
C
TJ = 25 o
C
4
5
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
50
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
TJ = 150 o
40
30
20
10
0
10
1
C
VDS = 5 V
TJ = 25 o
C
TJ = 150 o
C
0.1
TJ = -55 o
C
TJ = 25 o
C
0.01
TJ = -55 o
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
5000
1000
ID = 11.2 A
VDD = 50 V
8
Ciss
VDD = 25 V
VDD = 75 V
6
4
2
0
Coss
100
10
f = 1 MHz
= 0 V
V
GS
Crss
0.1
1
10
100
0
6
12
18
24
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
20
12
9
10
TJ = 25 oC
TJ = 100 oC
VGS = 10 V
6
VGS = 6 V
TJ = 125 o
C
3
RθJA = 50 oC/W
1
0.01
0
25
0.1
1
10
100
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Ambient Temperature
80
10
2000
SINGLE PULSE
θJA = 125 oC/W
A = 25 oC
1000
100
10
R
100us
T
1 ms
1
0.1
THIS AREA IS
10 ms
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
1 s
10 s
DC
1
0.01
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
0.01
0.1
1
10
100
500
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
P
DM
0.02
0.01
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 125 oC/W
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
0.0005
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
www.fairchildsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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