FDS86240 [ONSEMI]
N 沟道，PowerTrench® MOSFET，150V，7.5A，19.8mΩ;
| 型号： | FDS86240 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，150V，7.5A，19.8mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：422K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FDS86240
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 7.5 A, 19.8 mΩ
Features
General Description
Shielded Gate MOSFET Technology
This N-Channel MOSFET is produced using ON
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A
Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A
Applications
High Performance Trench Technology for Extremely Low
rDS(on)
DC/DC Converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24 V and 48 V Systems
High Voltage Synchronous Rectifier
High Power and Current Handling Capability in a Widely Used
Surface Mount Package
100% UIL Tested
RoHS Compliant
D
D
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
D
D
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
150
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
±20
7.5
ID
A
(Note 4)
199
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
(Note 1)
220
mJ
W
TC = 25 °C
TA = 25 °C
5.0
Power Dissipation
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
25
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
2500 units
FDS86240
FDS86240
SO-8
13 ’’
Semiconductor Components Industries, LLC, 2016
December, 2016, Rev. 1.2
Publication Order Number:
FDS86240/D
1
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
105
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2
2.7
-11
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
GS = 10 V, ID = 7.5 A
mV/°C
V
17.3
19.7
30.8
26
19.8
26
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 6 V, ID = 6.4 A
mΩ
VGS = 10 V, ID = 7.5 A, TJ = 125 °C
VDS = 10 V, ID = 7.5 A
35.3
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1930
198
8.3
2570
265
15
pF
pF
pF
Ω
VDS = 75 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.84
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
14
4.2
24
26
10
39
10
40
22
ns
ns
VDD = 75 V, ID = 7.5 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
4.9
28
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 5 V
nC
nC
nC
nC
16
VDD = 75 V,
D = 7.5 A
I
7.6
5.3
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 7.5 A
(Note 2)
(Note 2)
0.77
0.70
75
1.3
1.2
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 2 A
trr
Reverse Recovery Time
120
175
ns
IF = 7.5 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
109
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a) 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C, L = 1 mH, I = 21 A, V = 135 V, V = 10 V.
J
AS
DD
GS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
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2
Typical Characteristics TJ = 25 °C unless otherwise noted.
30
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5 V
VGS = 4.5 V
25
VGS = 10 V
VGS = 6 V
20
VGS = 5 V
VGS = 5.5 V
15
VGS = 5.5 V
10
VGS = 4.5 V
5
VGS = 10 V
25
VGS = 6 V
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
2.2
80
ID = 7.5 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10 V
60
40
20
0
ID = 7.5 A
TJ = 125 oC
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
30
100
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
25
20
15
10
5
10
1
VDS = 5 V
TJ = 150 o
C
TJ = 150 o
C
TJ = 25 oC
TJ = 25 o
C
0.1
TJ = -55 o
C
TJ = -55 o
C
0
0.01
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
10000
1000
100
10
ID = 7.5 A
8
Ciss
VDD = 100 V
VDD = 50 V
6
4
2
0
Coss
VDD = 75 V
f = 1 MHz
= 0 V
Crss
V
GS
1
0.1
0
5
10
15
20
25
30
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
8
6
4
2
0
30
VGS = 10 V
TJ = 25 oC
10
VGS = 6 V
TJ = 100 o
C
TJ = 125 o
C
RθJA = 50 oC/W
1
0.01
0.1
1
10
100
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Ambient Temperature
300
100
100000
SINGLE PULSE
θJA = 125 oC/W
A = 25 oC
10 μs
R
10000
1000
100
10
T
10
1
100 μs
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
0.1
SINGLE PULSE
TJ = MAX RATED
1 s
10 s
DC
R
θJA = 125 oC/W
0.01
0.001
1
CURVE BENT TO
ACUTAL DATA
T
A = 25 oC
0.1
10-5 10-4 10-3 10-2 10-1
1
10
102 103
0.01
0.1
1
10
100
500
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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4
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
10-1
0.2
0.1
0.05
0.02
0.01
10-2
P
DM
10-3
1
t
t
2
SINGLE PULSE
RθJA = 125 oC/W
NOTES:
DUTY FACTOR: D = t /t
10-4
1
2
PEAK T = P
x Z
x R
+ T
(Note 1b)
J
DM
θJA
θJA A
10-5
10-5
10-4
10-3
10-2
10-1
1
10
102
103
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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