FDS8672S [ONSEMI]
N 沟道 PowerTrench® SyncFET™ 30V，18A，4.8mΩ;
| 型号： | FDS8672S |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® SyncFET™ 30V，18A，4.8mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N-Channel,
POWERTRENCH), SyncFETE
FDS8672S
General Description
The FDS8672S is designed to replace a single MOSFET and
Schottky diode in synchronous DC/DC power supplies. This 30 V
MOSFET is designed to maximize power conversion efficiency,
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providing a low R
and low gate charge. The FDS8672S includes
DS(on)
a patented combination of a MOSFET monolithically integrated with
a Schottky diode using ON Semiconductor’s monolithic SyncFET
technology.
D
D
D
D
Features
G
S
S
• Max R
• Max R
= 4.8 mW at V = 10 V, I = 18 A
GS D
DS(on)
Pin 1
S
= 7.0 mW at V = 4.5 V, I = 15 A
DS(on)
GS
D
• Includes SyncFET Schottky Body Diode
• High Performance Trench Technology for Extremely Low R
and Fast Switching
SOIC8
CASE 751EB
DS(on)
MARKING DIAGRAM
• High Power and Current Handling Capability
• 100% R (Gate Resistance) Tested
g
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
$Y&Z&2&K
FDS
Applications
8672S
• Notebook Vcore Low Side Switch
• Synchronous Rectifier for DC/DC Converters
• Point of Load Low Side Switch
&Y
= ON Semiconductor Logo
&Z
&2
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FDS8672S
= Specific Device Code
PIN CONFIGURATION
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
November, 2019 − Rev. 2
FDS8672S/D
FDS8672S
MOSFET MAXIMUM RATINGS (T = 25°C Unless Otherwise Noted)
A
Symbol
Parameter
Ratings
30
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current −Continuous
20
V
I
D
A
18
80
Drain Current −Pulsed (Note 4)
E
Single Pulse Avalanche Energy (Note 3)
216
2.5
mJ
W
AS
Power Dissipation T = 25°C (Note 1a)
A
P
D
Power Dissipation T = 25°C (Note 1b)
1.0
A
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
25
Unit
R
Thermal Resistance, Junction to Case (Note 1)
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
θ
JC
JA
R
50
θ
ELECTRICAL CHARACTERISTICS (T = 25°C Unless Otherwise Noted)
J
Symbol
Parameter
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS
BV
Drain to Source Breakdown
Voltage
I
I
= 1 mA, V = 0 V
30
V
DSS
D
GS
DBV
/
Breakdown Voltage Temperature
Coefficient
= 10 mA, referenced to 25°C
33
mV/°C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
500
100
mA
DS
GS
I
=
20 V, V = 0 V
nA
GS
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = 1 mA
1.0
2.1
3.0
V
DS
D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, referenced to 25°C
−5
mV/°C
GS(th)
DT
J
R
Static Drain to Source On
Resistance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 18 A
3.8
5.3
5.3
78
4.8
7.0
7.8
mW
DS(on)
D
= 4.5 V, I = 15 A
D
= 10 V, I = 18 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 18 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V, f = 1 MHz
2005
985
135
0.6
2670
1310
205
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1 MHz
2.0
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 15 V, I = 18 A, V = 10 V,
GEN
12
4
22
10
42
10
ns
ns
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
26
3
d(off)
t
f
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2
FDS8672S
ELECTRICAL CHARACTERISTICS (T = 25°C Unless Otherwise Noted) (continued)
J
Symbol
Parameter
Min
Typ
Max
Unit
Test Conditions
SWITCHING CHARACTERISTICS
Q
Q
Total Gate Charge
V
V
= 0 V to 10 V
= 0 V to 5 V
V
DD
= 15 V, I = 18 A
29
15
41
21
nC
nC
nC
nC
g
g
GS
D
Total Gate Charge
GS
Q
gs
gd
Gate to Source Charge
Gate to Drain “Miller” Charge
5.5
3.7
Q
DRAIN−SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
GS
V
GS
= 0 V, I = 18 A
0.8
0.4
1.2
0.7
V
S
= 0 V, I = 1.8 A
S
t
Reverse Recovery Time
I = 18 A, di/dt = 300 A/ms
F
27
31
43
50
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
2
b. 125°C/W when mounted on a minimum pad.
a. 50°C/W when mounted on a 1in
pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25°C, L = 3 mH, I = 12 A, V = 30 V, V = 10 V.
J
AS
DD
GS
4. Pulse current was measured at 250 ms pulse, refer to Figure x11 Forward Safe Operation Area for detail.
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Size
Tape Width
Shipping
FDS8672S
FDS8672S
SOIC8
13″
12 mm
2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
FDS8672S
TYPICAL CHARACTERISTICS
(T = 25°C Unless Otherwise Noted)
J
80
60
40
20
4.0
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
V
GS = 3.5V
3.5
3.0
2.5
2.0
1.5
V
GS = 3V
10V
VGS
VGS
=
=
4.5V
3.5V
VGS
=
VGS = 4V
VGS = 4V
VGS = 3V
4.5V
=
VGS
1.0
0.5
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
10V
=
VGS
60
0
0
1
2
3
0
20
40
ID, DRAIN CURRENT (A)
80
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized On−Resistance vs Drain
Figure 1. On−Region Characteristics
Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
15
ID = 18A
VGS = 10V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
ID = 18A
12
9
TJ = 125oC
6
= 25o
TJ
3
C
3
2
4
5
6
−75 −50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (5C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On−Resistance vs Gate to Source
Voltage
100
80
60
40
20
VGS = 0V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
10
TJ = 125oC
VDD = 5V
1
0.1
0.01
TJ = 125 oC
T
J = 25oC
TJ = −55oC
T
J = 25oC
TJ = −55oC
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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4
FDS8672S
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C Unless Otherwise Noted)
J
10
8
5000
ID = 18A
Ciss
VDD = 10V
VDD = 15V
1000
Coss
6
VDD = 20V
4
Crss
2
f = 1MHz
V
GS = 0V
100
60
0.1
0
1
10
0
5
10
15
20
25
30
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 8. Capacitance vs. Drain to Source Voltage
Figure 7. Gate Charge Characteristics
20
15
30
10
VGS = 10V
10
5
TJ = 25oC
VGS = 4.5V
TJ = 125oC
R
qJA = 50oC/W
1
0
0.01
0.1
1
10
100
500
25
50
75
100
125
150
tAV, TIME IN AVALANCHE(ms)
, AMBIENT TEMPERATURE (5C)
TA
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs.
Ambient Temperature
1000
100000
Single Pulse
10000
1000
100
100
10
1
100 ms
1 ms
VGS ≤ 10 V
SINGLE PULSE
T
A
= 25°C
10 ms
100 ms
10
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
CURVE BENT TO
MEASURED DATA
1 sec
1
0.1
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01
0.1
1
10
100
VDS, DRAIN−SOURCE VOLTAGE (V)
PULSE TIME (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
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5
FDS8672S
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C Unless Otherwise Noted)
J
100
10
50% Duty Cycle
20%
10%
5%
1
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE TIME (sec)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
SyncFET is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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