FDS8690 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，14A，7.6mΩ;
| 型号： | FDS8690 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，14A，7.6mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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January 2006
FDS8690
N-Channel PowerTrench MOSFET
®
30V, 14A, 7.6mΩ
General Description
Features
Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A
High performance trench technology for extremely low
rDS(on) and fast switching
Very low gate charge
rDS(on) and fast switching speed.
High power and current handling capability
100% RG tested
Applications
Notebook CPU power supply
RoHS Compliant
Synchronous rectifier
Absolute Maximum Ratings TA = 25°C unless otherwise Noted
Symbol
VDS
VGS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
Drain Current
-Continuous
-Pulsed
(Note 1a)
14
ID
A
100
EAS
PD
Single Pulse Avalanche Energy
(Note 3)
(Note 1a)
(Note 1b)
(Note 1c)
210
mJ
Power Dissipation for Single Operation
2.5
1.2
W
1.0
TJ, TSTG
Operating and Storage Temperature
-55 to +150
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking
Device
FDS8690
Reel Size
Tape Width
12mm
Quantity
2500 units
FDS8690
13”
©2006 Fairchild Semiconductor Corporation
FDS8690 Rev. B
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
V
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
∆BVDSS
∆TJ
34.3
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24V, VGS = 0V
1
µA
VGS = ±20V, VDS = 0V
±100
nA
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1
1.6
3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID=250µA, referenced to
25°C
- 4.5
mV/°C
VGS = 10V, ID = 14A
6.3
8.6
7.6
V
GS = 4.5V, ID = 11.5A
11.4
rDS(ON)
Drain to Source On Resistance
mΩ
VGS = 10V, ID = 14A,
TJ = 125°C
9.0
10.9
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1260
535
80
1680
715
pF
pF
pF
Ω
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
120
f = 1MHz
1.1
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
8.0
1.8
26
16
10
42
35
ns
ns
ns
ns
V
V
DS = 15V, ID = 1A,
GS = 10V, RGS = 6Ω
Turn-Off Delay Time
Fall Time
19
V
DS = 15V, VGS = 10V
Qg
Total Gate Charge
18.8
27
14
nC
I
D = 14A
DS = 15V, VGS = 5V
ID = 14A
Qg
Total Gate Charge
10
3.5
2.9
nC
nC
nC
V
Qgs
Qgd
Gate to Source Gate Charge
Gate to Drain Charge
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.1A
0.7
1.2
45
33
V
Reverse Recovery Time
Reverse Recovery Charge
IF = 14A, di/dt = 100A/µs
IF = 14A, di/dt = 100A/µs
ns
nC
Qrr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
θJA
of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θJC
θCA
c) 125°C/W when
mounted on a
minimun pad
b)105°C/W when
a) 50°C/W when
2
2
mounted on a .04 in
mounted on a 1 in
pad of 2 oz copper
pad of 2 oz copper
2. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
o
3. Starting T = 25 C, L = 3mH, I
= 11.8A , V
= 24V, V
= 10V.
J
AS
DD
GS
2
www.fairchildsemi.com
FDS8690 Rev. B
Typical Characteristics TJ = 25°C unless otherwise noted
3.2
100
VGS = 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3.5V
2.8
2.4
2.0
1.6
1.2
0.8
VGS = 3.0V
80
60
40
20
0
VGS = 4.5V
VGS = 10V
VGS = 3.5V
VGS = 4V
VGS = 3V
VGS = 4.5V
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
20
40
60
80
100
0
1
2
3
4
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normal On-Resistance vs Drain Current
and Gate Voltage
1.6
60
ID = 14A
PULSE DURATION = 80µs
ID = 50A
VGS = 10V
DUTY CYCLE = 0.5%MAX
50
40
30
20
10
0
1.4
1.2
1.0
0.8
0.6
TJ = 150oC
TJ = 25oC
4
-80
-40
0
40
80
120
160
2
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
100
1000
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 0V
100
80
60
10
TJ = 150oC
TJ = 150oC
TJ = 25oC
TJ = 25oC
40
1
20
0.1
TJ = -55oC
TJ = -55oC
0
1.0
0.01
1.5
2.0
2.5
3.0
3.5
4.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
3
www.fairchildsemi.com
FDS8690 Rev. B
Typical Characteristics TJ = 25°C unless otherwise noted
10
8
4000
1000
Ciss
VDD = 15V
Coss
6
VDD = 10V
4
100
VDD = 20V
Crss
2
f = 1MHz
VGS = 0V
0
10
0.1
30
0
5
10
15
20
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
200
100
40
10us
100us
10
10
TJ = 25oC
1ms
1
10ms
100ms
1s
TJ = 125oC
0.1
OPERATION IN THIS
AREA MAY BE
SINGLE PULSE
= MAX RATED
TA = 25oC
T
J
DC
LIMITED BY r
DS(on)
1
10-2
0.01
10-1
100
101
102
103
0.1
1
10
100
tAV, TIME IN AVALANCHE(ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Forward Bias Safe Operating Area
10000
15
o
T
= 25 C
A
VGS = 10V
FOR TEMPERATURES
o
VGS = 10V
12
9
ABOVE 25 C DERATE PEAK
1000
100
10
CURRENT AS FOLLOWS:
150 – T
-----------------------
A
I = I
25
125
VGS = 4.5V
6
R
θJA = 50oC/W
3
SINGLE PULSE
1
0
25
10-5 10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
50
75
100
125
150
TA, AMBIENT TEMPERATURE(oC)
Figure 12. Single Pulse Maximum Power
Dissipation
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
4
www.fairchildsemi.com
FDS8690 Rev. B
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
1E-3
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
10-3
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
10-5
10-4
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
5
www.fairchildsemi.com
FDS8690 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
PowerTrench
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
QFET
QS™
®
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I2C™
MSXPro™
OCX™
®
UltraFET
i-Lo™
ImpliedDisconnect™
IntelliMAX™
UniFET™
VCX™
Wire™
OCXPro™
OPTOLOGIC
®
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Across the board. Around the world.™
®
The Power Franchise
SuperFET™
SuperSOT™-3
Programmable Active Droop™
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be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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